VS-20ETF12-M3

VS-20ETF...-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A FEATURES Base cathode 2 2 • Glass passivated pellet chip junction • 150 °C max operating junction temperature • Low forward voltage drop and short reverse recovery time 1 1 Cathode 3 • Designed and qualified JEDEC®-JESD 47 3 Anode 2L TO-220AC according to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS APPLICATIONS IF(AV) 20 A VR 800 V, 1000 V, 1200 V VF at IF 1.31 V IFSM 320 A trr 95 ns TJ max. 150 °C These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. DESCRIPTION Snap factor 0.6 Package 2L TO-220AC Circuit configuration Single The VS-20ETF... fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop.  The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM IF(AV) VALUES UNITS 800 to 1200 V Sinusoidal waveform 20 A 320 IFSM trr 1 A, 100 A/μs VF 20 A, TJ = 25 °C TJ Range 95 ns 1.31 V -40 to +150 °C VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VS-20ETF08-M3 800 900 VS-20ETF10-M3 1000 1100 VS-20ETF12-M3 1200 1300 6 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 113 °C, 180° conduction half sine wave 20 Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t 10 ms sine pulse, rated VRRM applied 270 10 ms sine pulse, no voltage reapplied 320 10 ms sine pulse, rated VRRM applied 365 10 ms sine pulse, no voltage reapplied 515 t = 0.1 ms to 10 ms, no voltage reapplied 5150 UNITS A A2s A2s Revision: 23-Nov-17 Document Number: 96214 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF...-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance VFM rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 20 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C VR = Rated VRRM TJ = 150 °C VALUES UNITS 1.31 V 11.88 m 0.93 V 0.1 mA 6 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor S TEST CONDITIONS VALUES UNITS 400 ns 6.1 A 1.7 μC IF at 20 Apk 25 A/μs 25 °C Typical IFM trr ta tb t dir dt Qrr 0.6 IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation Marking device UNITS -40 to +150 °C 0.9 °C/W 62 Mounting surface, smooth and greased 0.5 2 Approximate weight Mounting torque VALUES g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Case style 2L TO-220AC 20ETF08 20ETF10 20ETF12 Revision: 23-Nov-17 Document Number: 96214 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF...-M3 Series www.vishay.com Vishay Semiconductors 35 20ETF.. Series RthJC (DC) = 0.9 K/W Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 140 130 Ø Conduction angle 120 30° 60° 110 90° 120° 180° 25 20 RMS limit 15 Conduction period 5 20ETF.. Series TJ = 150 °C 0 5 0 15 10 20 0 25 5 10 20 15 25 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 150 300 20ETF.. Series RthJC (DC) = 0.9 K/W 260 140 Ø Conduction period 130 120 60° 110 30° 90° 120° At any rated load condition and with rated Vrrm applied following surge. Initial Tj = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 280 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) Ø 10 100 240 220 200 180 160 140 120 100 VS-20ETF.. Series 80 DC 180° 60 100 0 5 10 15 20 30 25 35 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Average Forward Current (A) Fig. 2 - Current Rating Characteristics 350 35 180° 120° 90° 60° 30° 30 25 20 RMS limit 15 Ø 10 Conduction angle 5 10 15 20 200 150 100 VS-20ETF.. Series 0 5 250 50 20ETF.. Series TJ = 150 °C 0 Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied 300 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 180° 120° 90° 60° 30° 30 25 0 0.01 0.1 1 10 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 23-Nov-17 Document Number: 96214 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF...-M3 Series Vishay Semiconductors 1000 6 Qrr - Typical Reverse Recovery Charge (µC) Instantaneous Forward Current (A) www.vishay.com 100 TJ = 25 °C TJ = 150 °C 10 5 IFM = 20 A 4 3 IFM = 10 A 2 IFM = 5 A 1 IFM = 1 A 20ETF.. Series 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 50 100 150 Fig. 7 - Forward Voltage Drop Characteristics Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 10 0.7 0.5 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 0.4 IFM = 30 A 20ETF.. Series TJ = 150 °C Qrr - Typical Reverse Recovery Charge (µC) 20ETF.. Series TJ = 25 °C 0.6 0.3 0.2 8 IFM = 20 A 6 IFM = 10 A 4 IFM = 5 A 2 IFM = 1 A 0.1 0 0 0 50 100 150 0 200 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 1.2 25 Irr - Typical Reverse Recovery Current (A) 20ETF.. Series TJ = 150 °C trr - Typical Reverse Recovery Time (µs) 200 dI/dt - Rate of Fall of Forward Current (A/µs) Instantaneous Forward Voltage (V) trr - Typical Reverse Recovery Time (µs) IFM = 30 A 20ETF.. Series TJ = 25 °C 0.9 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 0.6 0.3 0 20ETF.. Series TJ = 25 °C 20 IFM = 30 A IFM = 20 A IFM = 10 A 15 IFM = 5 A 10 IFM = 1 A 5 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Revision: 23-Nov-17 Document Number: 96214 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF...-M3 Series www.vishay.com Vishay Semiconductors 35 20ETF.. Series TJ = 150 °C Irr - Typical Reverse Recovery Current (A) 30 IFM = 30 A 25 IFM = 20 A 20 IFM = 10 A 15 IFM = 5 A 10 IFM = 1 A 5 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) ZthJC - Transient Thermal Impedance (K/W) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 1 Steady state value (DC operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.01 0.0001 0.001 0.01 20ETF.. Series 0.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 23-Nov-17 Document Number: 96214 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF...-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 20 E T F 12 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (20 = 20 A) 3 - Circuit configuration: E = single 4 - Package: T = 2L TO-220AC 5 - Type of silicon: F = fast soft recovery rectifier 6 - Voltage ratings 7 - Environmental digit 08 = 800 V 10 = 1000 V 12 = 1200 V -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-20ETF08-M3 50 1000 Antistatic plastic tube VS-20ETF10-M3 50 1000 Antistatic plastic tube VS-20ETF12-M3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96156 Part marking information www.vishay.com/doc?95391 Revision: 23-Nov-17 Document Number: 96214 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220AC DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (7) (E) A1 Thermal pad 1 (H1) H1 C D2 (6) D 2 D D L1 (2) C (6) c 2xb D1 2 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AC SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 12.88 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.507 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6 3, 6 6 6, 7 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 (minimum) Revision: 06-Dec-17 Document Number: 96156 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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