VS-20ETS08S-M3, VS-20ETS12S-M3 Series
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Vishay Semiconductors
High Voltage Surface Mount Input Rectifier Diode, 20 A
FEATURES
• Glass passivated pellet chip junction
Base
cathode
2
• Meets MSL level 1, per
LF maximum peak of 245 °C
• Designed and qualified
JEDEC®-JESD 47
2
1
1
Anode
3
J-STD-020,
according
to
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
Anode
D2PAK (TO-263AB)
APPLICATIONS
• Input rectification
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VR
800 V, 1200 V
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
VF at IF
1.1 V
IFSM
300 A
TJ max.
150 °C
Package
D2PAK (TO-263AB)
Circuit configuration
Single
DESCRIPTION
The VS-20ETS...S-M3 rectifier High Voltage Series has been
optimized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reliable
operation up to 150 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
UNITS
16.3
21
A
VALUES
UNITS
20
A
800/1200
V
300
A
Capacitive input filter TA = 55 °C, TJ = 125 °C
common heatsink of 1 °C/W
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Sinusoidal waveform
VRRM
IFSM
VF
20 A, TJ = 25 °C
TJ
1.1
V
-40 to +150
°C
VRSM, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
IRRM AT 150 °C
mA
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VS-20ETS08S-M3
800
900
VS-20ETS12S-M3
1200
1300
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current
IF(AV)
TC = 105 °C, 180° conduction half sine wave
20
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
I2√t
10 ms sine pulse, rated VRRM applied
250
10 ms sine pulse, no voltage reapplied
300
10 ms sine pulse, rated VRRM applied
316
10 ms sine pulse, no voltage reapplied
442
t = 0.1 ms to 10 ms, no voltage reapplied
4420
UNITS
A
A2s
A2√s
Revision: 16-Dec-2021
Document Number: 94889
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VS-20ETS08S-M3, VS-20ETS12S-M3 Series
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ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Forward slope resistance
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
VALUES
20 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
V
10.4
mΩ
0.85
V
0.1
VR = Rated VRRM
TJ = 150 °C
UNITS
1.1
mA
1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature range
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA (1)
Typical thermal resistance,
case to heatsink
TEST CONDITIONS
TJ, TStg
RthCS
VALUES
UNITS
-40 to +150
°C
DC operation
1.3
For D2PAK version
62
Mounting surface, smooth, and greased
0.5
2
g
0.07
oz.
minimum
6.0 (5.0)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
°C/W
20ETS08S
Case style D2PAK (TO-263AB)
Marking device
20ETS12S
Note
(1) When mounted on 1” square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
150
20ETS.. Series
RthJC (DC) = 1.3 °C/W
140
Ø
130
Conduction angle
120
110
100
30°
60°
90° 120°
Maximum Allowable Case
Temperature (°C)
Maximum Allowable Case
Temperature (°C)
150
20ETS.. Series
RthJC (DC) = 1.3 °C/W
140
130
Ø
Conduction period
120
30°
110
60°
90°
100
120°
180°
180°
10
DC
90
0
2
4
6
8
10 12 14 16 18 20 22
0
5
10
15
20
25
30
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
35
Revision: 16-Dec-2021
Document Number: 94889
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETS08S-M3, VS-20ETS12S-M3 Series
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300
180°
120°
90°
60°
30°
25
20
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
30
Vishay Semiconductors
RMS limit
15
Ø
10
Conduction angle
20ETS.. Series
TJ = 150 °C
5
250
200
150
100
20ETS.. Series
0
50
0
4
8
12
20
16
24
1
10
100
Average Forward Current (A)
Number of Equal Amplitude Half
Cycle Current Pulse (N)
Fig. 3 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
35
300
DC
180°
120°
90°
60°
30°
30
25
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
20
RMS limit
15
Ø
10
Conduction period
20ETS.. Series
TJ = 150 °C
5
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
250
200
150
100
20ETS.. Series
50
0
0
5
10
15
20
0.01
25
0.1
1
Pulse Train Duration (s)
Fig. 4 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
Average Forward Current (A)
1000
TJ = 25°C
100
TJ = 150°C
10
20ETS.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forwad Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 16-Dec-2021
Document Number: 94889
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETS08S-M3, VS-20ETS12S-M3 Series
www.vishay.com
Vishay Semiconductors
ZthJC - Transient Thermal
Impedance (°C/W)
10
Steady state value
(DC operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Single pulse
0.01
0.0001
0.001
20ETS.. Series
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
20
E
T
S
12
S
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (20 = 20 A)
3
-
Circuit configuration
4
-
Package:
TRL -M3
8
9
E = single
T = D2PAK (TO-263AB)
5
-
Type of silicon:
S = standard recovery rectifier
6
-
Voltage code x 100 = VRRM
7
-
S = surface mountable
8
-
08 = 800 V
12 = 1200 V
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9
-
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
Revision: 16-Dec-2021
Document Number: 94889
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETS08S-M3, VS-20ETS12S-M3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION (Example)
PREFERRED P/N
BASE QUANTITY
PACKAGING DESCRIPTION
VS-20ETS08S-M3
50
Antistatic plastic tube
VS-20ETS08STRR-M3
800
13" diameter reel
VS-20ETS08STRL-M3
800
13" diameter reel
VS-20ETS12S-M3
50
Antistatic plastic tube
VS-20ETS12STRR-M3
800
13" diameter reel
VS-20ETS12STRL-M3
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96164
Part marking information
www.vishay.com/doc?95444
Packaging information
www.vishay.com/doc?96424
SPICE model
www.vishay.com/doc?95409
Revision: 16-Dec-2021
Document Number: 94889
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
C
2xb
2.64 (0.103)
2.41 (0.096)
(3)
E1
c
View A - A
± 0.004 M B
0.010 M A M B
2x e
Plating
Base
Metal
(4)
b1, b3
H
Gauge
plane
L
Seating
plane
L3
A1
Lead tip
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
c1 (4)
(c)
B
0° to 8°
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
0.110
L
1.78
2.79
0.070
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inches
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 13-Jul-17
Document Number: 96164
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Revision: 01-Jan-2022
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Document Number: 91000