VS-25TTS08-M3, VS-25TTS12-M3
www.vishay.com
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 25 A
FEATURES
2
(A)
• Designed and qualified
JEDEC®-JESD 47
according
to
• 125 °C max. operating junction temperature
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
1 (K) (G) 3
3L TO-220AB
APPLICATIONS
PRIMARY CHARACTERISTICS
IT(AV)
16 A
VDRM/VRRM
800 V, 1200 V
VTM
1.25 V
IGT
45 mA
TJ
-40 °C to 125 °C
Package
3L TO-220AB
Circuit configuration
Single SCR
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding, and battery
charge.
DESCRIPTION
The VS-25TTS... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter
TA = 55 °C, TJ = 125 °C,
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
UNITS
18
22
A
VALUES
UNITS
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IT(AV)
TEST CONDITIONS
Sinusoidal waveform
IRMS
16
25
VRRM/VDRM
ITSM
A
800, 1200
V
320
A
1.25
V
dV/dt
500
V/µs
dI/dt
150
A/µs
-40 to +125
°C
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
VT
16 A, TJ = 25 °C
TJ
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VS-25TTS08-M3
800
800
VS-25TTS12-M3
1200
1200
10
Revision: 21-Aug-17
Document Number: 96288
1
For technical questions within your region: diodes-tech@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-25TTS08-M3, VS-25TTS12-M3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
IT(AV)
Maximum RMS on-state current
IRMS
Maximum peak, one-cycle,
non-repetitive surge current
ITSM
TEST CONDITIONS
VALUES
MAX.
TYP.
TC = 93 °C, 180° conduction half sine wave
16
10 ms sine pulse, rated VRRM applied
270
10 ms sine pulse, no voltage reapplied
320
10 ms sine pulse, rated VRRM applied
365
10 ms sine pulse, no voltage reapplied
515
UNITS
25
A
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
t = 0.1 to 10 ms, no voltage reapplied
5152
A2s
Maximum on-state voltage drop
VTM
16 A, TJ = 25 °C
1.25
V
12.0
m
1.0
V
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
rt
VT(TO)
IRM/IDM
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
Holding current
IH
Maximum latching current
IL
Anode supply = 6 V, resistive load, TJ = 25 °C
Maximum rate of rise of off-state voltage
dV/dt
Maximum rate of rise of turned-on current
dI/dt
0.5
VR = Rated VRRM/VDRM
Anode supply = 6 V, resistive load, initial IT = 1 A,
TJ = 25 °C
TJ = TJ max., linear to 80 °C, VDRM = Rg - k = Open
A2s
10
150
-
mA
200
500
V/μs
150
A/μs
TRIGGERING
PARAMETER
TEST CONDITIONS
SYMBOL
VALUES
UNITS
PGM
8.0
PG(AV)
2.0
Maximum peak positive gate current
+ IGM
1.5
A
Maximum peak negative gate voltage
- VGM
10
V
Maximum peak gate power
Maximum average gate power
Maximum required DC gate current to trigger
Maximum required DC gate
voltage to trigger
IGT
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
Anode supply = 6 V, resistive load, TJ = - 10 °C
60
Anode supply = 6 V, resistive load, TJ = 25 °C
45
Anode supply = 6 V, resistive load, TJ = 125 °C
20
Anode supply = 6 V, resistive load, TJ = - 10 °C
2.5
Anode supply = 6 V, resistive load, TJ = 25 °C
2.0
Anode supply = 6 V, resistive load, TJ = 125 °C
1.0
TJ = 125 °C, VDRM = Rated value
W
mA
V
0.25
2.0
mA
VALUES
UNITS
SWITCHING
PARAMETER
SYMBOL
Typical turn-on time
tgt
Typical reverse recovery time
trr
Typical turn-off time
tq
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
0.9
4
µs
110
Revision: 21-Aug-17
Document Number: 96288
2
For technical questions within your region: diodes-tech@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-25TTS08-M3, VS-25TTS12-M3
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
VALUES
UNITS
-40 to +125
°C
DC operation
1.1
Mounting surface, smooth and greased
0.5
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
Marking device
25TTS12
25
25TTS.. Series
RthJC (DC) = 1.1 °C/W
Maximum Average On-State
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
25TTS08
Case style 3L TO-220AB
130
120
Ø
110
Conduction angle
100
180°
90°
30°
60°
180°
120°
90°
60°
30°
20
15
RMS limit
10
Ø
Conduction angle
5
25TTS.. Series
TJ = 125 °C
120°
0
90
0
5
15
10
0
20
4
8
12
16
20
Average On-State Current (A)
Average On-State Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
130
35
25TTS.. Series
RthJC (DC) = 1.1 °C/W
Maximum Average On-State
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
°C/W
62
120
Ø
110
Conduction period
100
30°
90
60°
120°
DC
180°
90°
80
DC
180°
120°
90°
60°
30°
30
25
20
RMS limit
15
Ø
10
Conduction period
5
25TTS.. Series
TJ = 125 °C
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Average On-State Current (A)
Average On-State Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 4 - On-State Power Loss Characteristics
Revision: 21-Aug-17
Document Number: 96288
3
For technical questions within your region: diodes-tech@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-25TTS08-M3, VS-25TTS12-M3
www.vishay.com
Vishay Semiconductors
300
350
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
260
240
Peak Half Sine Wave
On-State Current (A)
Peak Half Sine Wave
On-State Current (A)
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
At any rated load condition and with
rated VRRM applied following surge
280
220
200
180
160
300
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
250
200
150
VS-25TTS.. Series
VS-25TTS.. Series
140
120
1
10
100
0.01
100
0.1
10
1
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-State Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
1000
100
TJ = 25 °C
TJ = 125 °C
10
25TTS.. Series
1
0
1
2
3
4
5
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
10
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 10 V, 20 Ω
tr = 0.5 µs, tp ≥ 6 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 65 Ω
tr = 1 µs, tp ≥ 6 µs
VGD
IGD
0.1
0.001
(a)
(b)
TJ = 10 °C
1
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
TJ = 25 °C
TJ = 125 °C
Instantaneous Gate Voltage (V)
100
(4)
0.1
(2)
(1)
Frequency limited by PG(AV)
25TTS.. Series
0.01
(3)
1
10
100
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
Revision: 21-Aug-17
Document Number: 96288
4
For technical questions within your region: diodes-tech@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-25TTS08-M3, VS-25TTS12-M3
www.vishay.com
Vishay Semiconductors
ZthJC - Transient
Thermal Impedance (°C/W)
10
Steady state value
(DC operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Single pulse
0.01
0.0001
0.001
25TTS.. Series
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
25
T
T
S
12
-M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (25 = 25 A)
3
-
Circuit configuration:
T = single thyristor
4
-
Package:
T = TO-220AB
5
-
Type of silicon:
S = standard recovery rectifier
6
-
Voltage rating
7
-
Environmental digit:
08 = 800 V
12 = 1200 V
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-25TTS08-M3
50
1000
Antistatic plastic tubes
VS-25TTS12-M3
50
1000
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96154
Part marking information
www.vishay.com/doc?95028
Revision: 21-Aug-17
Document Number: 96288
5
For technical questions within your region: diodes-tech@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
3L TO-220AB
DIMENSIONS in millimeters and inches
A
0.014 M B A M
(6)
E
A
ØP
Q
B
A
(6)
(E)
A1
Thermal pad
1
D
(H1)
H1
C
D2
(6) D
2 3
D
L1 (2)
C
(6)
c
3xb
D1
3 x b2
Detail B
Detail B
A2
L
E1 (6)
C
(b, b2)
Base metal
A
c1 (4)
c
2x e
Plating
View A - A
e1
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead tip
Conforms to JEDEC® outline TO-220AB
SYMBOL
A
A1
A2
b
b1
b2
b3
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.50
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.35
8.38
9.02
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.098
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.604
0.330
0.355
NOTES
4
4
4
3
SYMBOL
D2
E
E1
e
e1
H1
L
L1
ØP
Q
MILLIMETERS
MIN.
MAX.
11.68
13.30
10.11
10.51
6.86
8.89
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.91
2.60
3.00
INCHES
MIN.
MAX.
0.460
0.524
0.398
0.414
0.270
0.350
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.154
0.102
0.118
NOTES
6, 7
3, 6
6
6
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3, and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2, and E1
(7) Outline conforms to JEDEC® TO-220, except D2
Revision: 13-Jun-2019
Document Number: 96154
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
1
Document Number: 91000
工商网监
湘ICP备2023018690号
