VS-30CTH02S-M3

VS-30CTH02S-M3, VS-30CTH02-1-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® FEATURES • Hyperfast recovery time • Low forward voltage drop • Low leakage current 2 • 175 °C operating junction temperature 1 1 3 D2PAK • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 (TO-263AB) TO-262AA 3 Base Common Cathode 2 Base Common Cathode 2 2 Common Cathode 2 Common Cathode 3 Anode 1 Anode DESCRIPTION / APPLICATIONS Vishay Semiconductors 200 V series are the state of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.   3 Anode 1 Anode VS-30CTH02S-M3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VS-30CTH02-1-M3 PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VR 200 V VF at IF 0.78 V trr typ. 30 ns TJ max. 175 °C Package D2PAK (TO-263AB), TO-262AA Circuit configuration Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage TEST CONDITIONS VRRM per diode Average rectified forward current per device Non-repetitive peak surge current IF(AV) IFSM Operating junction and storage temperatures TC = 159 °C MAX. UNITS 200 V 15 30 TC = 25 °C TJ, TStg A 200 -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance CT Series inductance LS TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. UNITS 200 - - V IF = 15 A - 0.92 1.05 IF = 15 A, TJ = 125 °C - 0.78 0.85 VR = VR rated - - 10 TJ = 125 °C, VR = VR rated - 5 300 VR = 200 V - 57 - pF Measured lead to lead 5 mm from package body - 8 - nH V μA Revision: 24-Oct-17 Document Number: 96234 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH02S-M3, VS-30CTH02-1-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr TEST CONDITIONS Reverse recovery charge Qrr MAX. - - 35 IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - - 30 TJ = 25 °C - 26 - - 40 - TJ = 25 °C IRRM TYP. IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V TJ = 125 °C Peak recovery current MIN. IF = 15 A dIF/dt = 200 A/μs VR = 160 V - 2.8 - TJ = 125 °C - 6.0 - TJ = 25 °C - 37 - TJ = 125 °C - 120 - UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case per diode SYMBOL MIN. TYP. MAX. TJ, TStg -65 - 175 °C RthJC - - 1.1 °C/W - 2.0 - g - 0.07 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) Weight Mounting torque Marking device UNITS Case style D2PAK (TO-263AB) 30CTH02S Case style TO-262 30CTH02-1 100 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1 0.4 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) TJ = 175 °C TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0.0001 0.6 0.8 1.0 1.2 1.4 1.6 0 50 100 150 200 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 24-Oct-17 Document Number: 96234 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH02S-M3, VS-30CTH02-1-M3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 TJ = 25 °C 10 0 50 100 150 200 ZthJC - Thermal Impedance (°C/W) VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM Single pulse (thermal resistance) 0.01 0.00001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 0.0001 0.001 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 25 Average Power Loss (W) Allowable Case Temperature (°C) 180 170 DC 160 Square wave (D = 0.50) Rated VR applied 150 20 RMS limit 15 10 5 DC See note (1) 140 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0 0 5 10 15 20 25 0 5 10 15 20 25 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 24-Oct-17 Document Number: 96234 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH02S-M3, VS-30CTH02-1-M3 www.vishay.com Vishay Semiconductors 100 1000 IF = 15 A trr (ns) Qrr (nC) IF = 15 A 100 VR = 160 V TJ = 125 °C TJ = 25 °C 10 100 VR = 160 V TJ = 125 °C TJ = 25 °C 10 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR  (1) (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 24-Oct-17 Document Number: 96234 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH02S-M3, VS-30CTH02-1-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 C T H 02 S 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (30 A) 3 - C = common cathode 4 - T = TO-220, D2PAK 5 - H = hyperfast rectifier 6 - Voltage rating (02 = 200 V) 7 - TRL -M3 8 9 S = D2PAK -1 = TO-262 8 - None = tube (50 pieces) TRL = tape and reel (left oriented, for D2PAK package) TRR = tape and reel (right oriented, for D2PAK package) 9 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information D2PAK www.vishay.com/doc?96164 TO-262AA www.vishay.com/doc?96165 D2PAK www.vishay.com/doc?95444 TO-262AA www.vishay.com/doc?95443 www.vishay.com/doc?96424 Revision: 24-Oct-17 Document Number: 96234 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 C 2xb 2.64 (0.103) 2.41 (0.096) (3) E1 c View A - A ± 0.004 M B 0.010 M A M B 2x e Plating Base Metal (4) b1, b3 H Gauge plane L Seating plane L3 A1 Lead tip (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. c1 (4) (c) B 0° to 8° MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 0.110 L 1.78 2.79 0.070 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inches (7) Outline conforms to JEDEC® outline TO-263AB Revision: 13-Jul-17 Document Number: 96164 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000