VS-30EPF12-M3

VS-30.PF1.-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 30 A FEATURES • Glass passivated pellet chip junction • 150 °C max. operating junction temperature • Low forward voltage drop and short reverse recovery time 1 1 2 3 3 TO-247AC 2L TO-247AC 3L 2 2 1 Cathode 3 Anode Anode 1 VS-30EPF1... according Available to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Base cathode Base cathode • Designed and qualified JEDEC®-JESD 47 APPLICATIONS Anode 3 VS-30APF1... 30 A VR 1000 V, 1200 V VF at IF 1.41 V IFSM 350 A DESCRIPTION The VS-35EPF12LHM3 and VS-35APF12LHM3 soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. PRIMARY CHARACTERISTICS IF(AV) These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. trr 95 ns TJ max. 150 °C Package TO-247AC 2L, TO-247AC 3L Circuit configuration Single Snap factor 0.6 MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Sinusoidal waveform VALUES UNITS 30 A VRRM 1000 to 1200 V IFSM 350 A VF 30 A, TJ = 25 °C trr 1 A, 100 A/μs 1.41 V 95 ns -40 to +150 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VS-30EPF10-M3, VS-30APF10-M3 1000 1100 VS-30EPF12-M3, VS-30APF12-M3 1200 1300 TJ VOLTAGE RATINGS PART NUMBER 6 Revision: 29-Nov-2019 Document Number: 93705 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30.PF1.-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 95 °C, 180° conduction half sine wave 30 Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t UNITS 10 ms sine pulse, rated VRRM applied 300 10 ms sine pulse, no voltage reapplied 350 10 ms sine pulse, rated VRRM applied 450 10 ms sine pulse, no voltage reapplied 636 t = 0.1 ms to 10 ms, no voltage reapplied 6360 A2√s VALUES UNITS 1.41 V 10.09 mΩ 0.992 V A A2s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 30 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C 0.1 VR = Rated VRRM TJ = 150 °C mA 6 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor S TEST CONDITIONS VALUES UNITS 450 ns 6.1 A IF at 30 Apk 25 A/μs 25 °C 2.16 Typical IFM trr ta tb t dir dt μC 0.6 Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation UNITS -40 to +150 °C 0.8 °C/W 40 Mounting surface, smooth and greased 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES Case style TO-247AC 2L Marking device Case style TO-247AC 3L 30EPF10 30EPF12 30APF10 30APF12 Revision: 29-Nov-2019 Document Number: 93705 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30.PF1.-M3 Series Vishay Semiconductors 150 80 RthJC (DC) = 0.60 °C/W Maximum Average Forward Power Loss (W) Max. Allowable Case Temperature (°C) www.vishay.com 140 130 Conduction 120 110 100 60° 90 120° 30° 90° 180° 180° 120° 90° 60° 30° 70 60 40 RMS limit 30 Ø 20 Conduction period 10 30.PF.. Series TJ = 150 °C 0 80 0 5 10 15 20 25 30 35 0 40 10 Fig. 1 - Current Rating Characteristics 50 40 Fig. 4 - Forward Power Loss Characteristics 150 350 At any rated load condition and with rated VRRM applied following surge. RthJC (DC) = 0.60°C/W 140 300 Conduction Angle 130 120 110 100 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 250 200 150 100 DC 120° 60° 90 Peak Half Sine Wave Forward Current (A) Max. Allowable Case Temperature (°C) 30 20 Average Forward Current (A) Average On-State Current (A) 30.PF.. Series 30° 90° 180° 50 1 80 0 10 20 30 40 50 60 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Average On-State Current (A) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 70 400 180° 120° 90° 60° 30° 60 50 350 Peak Half Sine Wave Forward Current (A) Max. Average On-state Power Loss (W) DC 50 40 RMS limit 30 20 Conduction Angle 10 20 250 200 150 30.PF.. Series 0 10 Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 300 100 Tj = 150°C 0 Maximum non-repetitive surge current versus pulse train duration. 30 40 Average On-state Current (A) Fig. 3 - Forward Power Loss Characteristics 50 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 29-Nov-2019 Document Number: 93705 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30.PF1.-M3 Series Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 1000 100 TJ = 25 °C TJ = 150 °C 10 30.PF.. Series 1 1 0 2 3 4 6 5 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 30.PF.. Series TJ = 25 °C trr - Typical Reverse Recovery Time (µs) 0.6 6 IFM = 30 A IFM = 20 A Qrr - Typical Reverse Recovery Charge (µC) 0.7 IFM = 5 A 0.5 IFM = 1 A 0.4 0.3 0.2 5 IFM = 20 A 4 3 IFM = 10 A 2 IFM = 5 A 1 0.1 0 IFM = 1 A 0 0 50 100 150 200 0 dI/dt - Rate of Fall of Forward Current (A/µs) 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 10 1.2 30.PF.. Series TJ = 150 °C Qrr - Typical Reverse Recovery Charge (µC) 30.PF.. Series TJ = 150 °C 1.0 trr - Typical Reverse Recovery Time (µs) IFM = 30 A 30.PF.. Series TJ = 25 °C IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 0.8 0.6 0.4 0.2 IFM = 30 A 8 IFM = 20 A 6 4 IFM = 10 A 2 IFM = 5 A IFM = 1 A 0 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C Revision: 29-Nov-2019 Document Number: 93705 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30.PF1.-M3 Series www.vishay.com Vishay Semiconductors 35 30.PF.. Series TJ = 25 °C 20 30.PF.. Series TJ = 150 °C IFM = 30 A 30 IFM = 20 A Irr - Typical Reverse Recovery Current (A) Irr - Typical Reverse Recovery Current (A) 25 IFM = 10 A 15 IFM = 5 A 10 IFM = 1 A 5 IFM = 30 A 25 IFM = 20 A 20 IFM = 10 A 15 IFM = 5 A 10 IFM = 1 A 5 0 0 0 50 100 150 0 200 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Fig. 13 - Recovery Current Characteristics, TJ = 150 °C ZthJC - Transient Thermal Impedance (K/W) dI/dt - Rate of Fall of Forward Current (A/µs) 1 Steady state value (DC operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.01 0.0001 0.001 30.PF.. Series 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 29-Nov-2019 Document Number: 93705 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30.PF1.-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 E P F 12 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (30 = 30 A) 3 - Circuit configuration: E = single diode, 2 pins A = single diode, 3 pins 4 - 5 - Package: P = TO-247AC 3L / TO-247AC 2L Type of silicon: F = fast recovery 6 - Voltage code x 100 = VRRM 7 - Environmental digit: 10 = 1000 V 12 = 1200 V -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-30EPF10-M3 25 500 Antistatic plastic tubes VS-30APF10-M3 25 500 Antistatic plastic tubes VS-30EPF12-M3 25 500 Antistatic plastic tubes VS-30APF12-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model TO-247AC 2L www.vishay.com/doc?96144 TO-247AC 3L www.vishay.com/doc?96138 TO-247AC 2L www.vishay.com/doc?95648 TO-247AC 3L www.vishay.com/doc?95007 www.vishay.com/doc?95184 Revision: 29-Nov-2019 Document Number: 93705 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-30CPF12PBF VS-30CPF10PBF VS-30APF10PBF