VS-45EPF12L-M3, VS-45APF12L-M3
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Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 45 A
FEATURES
• Very low forward voltage drop and short
reverse recovery time
• Glass passivated pellet chip junction
2
1
1
• Designed and qualified
JEDEC® - JESD 47
2
3
3
TO-247AD 2L
Base cathode
2
according
to
TO-247AD 3L
• Flexible solution for reliable AC power rectification
Base cathode
2
• High surge, low VF rugged blocking diode for DC charging
stations
• AEC-Q101 qualified P/N available (VS-45EPF12LHM3,
VS-45APF12LHM3)
1
Cathode
3
Anode
VS-45EPF12L-M3
3
Anode
1
Anode
VS-45APF12L-M3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
PRIMARY CHARACTERISTICS
IF(AV)
45 A
VR
1200 V
DESCRIPTION
VF at IF
1.44 V
IFSM
550 A
The VS-45EPF12L-M3, VS-45APF12L-M3 fast soft recovery
rectifier series has been optimized for combined short
reverse recovery time and low forward voltage drop.
trr
95 ns
TJ max.
150 °C
Snap factor
0.5
Package
TO-247AD 2L, TO-247AD 3L
Circuit configuration
Single
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Sinusoidal waveform
VALUES
UNITS
45
A
VRRM
1200
V
IFSM
550
A
VF
20 A, TJ = 25 °C
trr
1 A, 100 A/μs
TJ
1.22
V
95
ns
-40 to +150
°C
VOLTAGE RATINGS
PART NUMBER
VRSM, MAXIMUM
VRRM, MAXIMUM
NON-REPETITIVE PEAK REVERSE
PEAK REVERSE VOLTAGE
VOLTAGE
V
V
VS-45EPF12L-M3
1200
1300
VS-45APF12L-M3
1200
1300
IRRM
AT 150 °C
mA
10
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VS-45EPF12L-M3, VS-45APF12L-M3
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current
IF(AV)
TC = 97 °C, 180° conduction half sine wave
45
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
10 ms sine pulse, rated VRRM applied
462
10 ms sine pulse, no voltage reapplied
550
10 ms sine pulse, rated VRRM applied
1069
10 ms sine pulse, no voltage reapplied
1513
UNITS
A
A2s
t = 0.1 ms to 10 ms, no voltage reapplied
15 125
A2s
TEST CONDITIONS
VALUES
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Forward slope resistance
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
45 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
VR = rated VRRM
1.44
V
6.82
m
0.94
V
0.1
mA
10
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
S
TEST CONDITIONS
IF at 40 Apk
25 A/μs
25 °C
Typical
VALUES
UNITS
450
ns
6
A
1.8
μC
IFM
trr
ta
tb
dir
dt
t
Qrr
IRM(REC)
0.5
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
unction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
DC operation
Marking device
UNITS
-40 to +150
°C
0.4
°C/W
40
Mounting surface, smooth, and greased
0.25
6
g
0.21
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
VALUES
Case style TO-247AD 2L
45EPF12L
Case style TO-247AD 3L
45APF12L
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VS-45EPF12L-M3, VS-45APF12L-M3
150
RthJC (DC) = 0.40 °C/W
140
130
Conduction
angle
120
110
100
90
80
70
30°
90° 120°
60°
180°
60
0
10
20
30
40
50
120
180°
120°
90°
60°
30°
100
80
DC
60
RMS limit
40
Conduction angle
20
TJ = 150 °C
0
0
Conduction angle
120
110
100
90
DC
90°
30°
60°
180°
120°
70
0
60
70
80
20
40
60
80
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
500
400
300
200
100
1
50
RMS limit
30
Conduction angle
10
TJ = 150 °C
0
20
30
40
50
Average On-state Current (A)
Fig. 3 - Forward Power Loss Characteristics
Peak Half Sine Wave Forward Curent (A)
180°
120°
90°
60°
30°
10
100
Fig. 5 - Maximum Non-Repetitive Surge Current
80
20
10
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 2 - Current Rating Characteristics
Max. Average On-state Power Loss (W)
50
600
Average On-State Current (A)
0
40
Fig. 4 - Forward Power Loss Characteristics
130
40
30
Fig. 1 - Current Rating Characteristics
140
60
20
Average On-state Current (A)
RthJC (DC) = 0.40°C/W
70
10
Average On-State Current (A)
150
80
Max. Average On-state Power Loss (W)
Vishay Semiconductors
Peak Half Sine Wave Forward Current (A)
Max. Allowable Case Temperature (°C)
Max. Allowable Case Temperature (°C)
www.vishay.com
650
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
550
450
350
250
150
50
0.01
0.1
1
10
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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VS-45EPF12L-M3, VS-45APF12L-M3
Vishay Semiconductors
1000
100
TJ = 25 °C
TJ = 150 °C
10
1
0
1
2
3
5
4
6
Instantaneous Forward Voltage (V)
Qrr - Typical Reverse Recovery Charge (µC)
Instantaneous Forward Current (A)
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0.7
TJ = 25 °C
0.6
0.5
0.4
IFM = 40 A
0.3
IFM = 30 A
IFM = 10 A
0.2
IFM = 5 A
0.1
IFM = 1 A
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
TJ = 150 °C
1.6
IFM = 60 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
1.2
0.8
0.4
0
0
40
80
120
160
200
IFM = 40 A
4
IFM = 30 A
3
IFM = 10 A
2
IFM = 5 A
1
IFM = 1 A
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
20
TJ = 150 °C
IFM = 60 A
16
IFM = 40 A
12
IFM = 20 A
8
IFM = 10 A
IFM = 5 A
4
IFM = 1 A
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Irr - Typical Reverse Recovery Current (A)
trr - Typical Reverse Recovery Time (µs)
Fig. 8 - Thermal Impedance ZthJC Characteristics
2.0
TJ = 25 °C
5
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
Qrr - Typical Reverse Recovery Charge (µC)
trr - Typical Reverse Recovery Time (µs)
Fig. 7 - Forward Voltage Drop Characteristics
6
30
TJ = 25 °C
25
IFM = 40 A
IFM = 30 A
20
IFM = 10 A
15
IFM = 5 A
10
IFM = 1 A
5
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Revision: 10-Jul-2018
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VS-45EPF12L-M3, VS-45APF12L-M3
Irr - Typical Reverse Recovery Current (A)
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Vishay Semiconductors
50
TJ = 150 °C
IFM = 60 A
40
IFM = 40 A
30
IFM = 20 A
IFM = 10 A
20
IFM = 5 A
10
IFM = 1 A
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
ZthJC - Transient Thermal Impedance
(°C/W)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
1
0.5
0.33
0.1
0.25
0.01
0.0001
0.17
0.08
Single pulse
0.001
Steady state value
(DC operation)
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 10-Jul-2018
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VS-45EPF12L-M3, VS-45APF12L-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
45
E
P
F
12
L
-M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (45 = 45 A)
3
-
Circuit configuration:
E = single, 2 pins
A = single, 3 pins
4
-
5
-
Package:
P = TO-247AD
Type of silicon:
F = fast recovery rectifier
6
-
Voltage code x 100 = VRRM
7
-
L = long leads
8
-
Environmental digit:
12 = 1200 V
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
VS-45EPF12L-M3
25
500
PACKAGING DESCRIPTION
Antistatic plastic tubes
VS-45APF12L-M3
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247AD 2L
www.vishay.com/doc?95536
TO-247AD 3L
www.vishay.com/doc?95626
TO-247AD 2L
www.vishay.com/doc?95648
TO-247AD 3L
www.vishay.com/doc?95007
Revision: 10-Jul-2018
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Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247AD 2L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) F P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M D BM
F P1
A
D2
Q
2xR
(2)
D1 (4)
D
1, 2
4
D
3
Thermal pad
(5) L1
C
L
See view B
(4)
E1
A
0.01 M D B M
View A - A
C
2 x b2
2xb
2x e
A1
0.10 M C A M
(b1, b3)
Plating
Base metal
D D
(c)
c1
C
C
(b, b2)
(4)
Section C - C, D - D
SYMBOL
MILLIMETERS
View B
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.65
5.31
0.183
0.209
A1
2.21
2.59
0.087
0.102
NOTES
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
E
15.29
15.87
0.602
0.625
E1
13.46
-
0.53
-
A2
1.50
2.49
0.059
0.098
e
5.46 BSC
b
0.99
1.40
0.039
0.055
ØK
0.254
b1
0.99
1.35
0.039
0.053
L
19.81
20.32
0.780
0.800
b2
1.65
2.39
0.065
0.094
L1
3.71
4.29
0.146
0.169
b3
1.65
2.34
0.065
0.092
ØP
3.56
3.66
0.14
0.144
c
0.38
0.89
0.015
0.035
Ø P1
-
6.98
-
0.275
NOTES
3
0.215 BSC
0.010
c1
0.38
0.84
0.015
0.033
Q
5.31
5.69
0.209
0.224
D
19.71
20.70
0.776
0.815
3
R
4.52
5.49
0.178
0.216
D1
13.08
-
0.515
-
4
S
D2
0.51
1.35
0.020
0.053
5.51 BSC
0.217 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 28-May-2018
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Outline Dimensions
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Vishay Semiconductors
TO-247AD 3L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Φ P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M DBM
Φ P1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
(4)
E1
A
0.01 M D B M
View A - A
See view B
2 x b2
3xb
C
2x e
b4
A1
0.10 M C A M
(b1, b3, b5)
Plating
Base metal
D DE
(c)
c1
E
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
View B
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.46
5.46 BSC
0.254
19.81
20.32
3.71
4.29
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.53
0.215 BSC
0.010
0.780
0.800
0.146
0.169
0.14
0.144
0.275
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 06-Mar-2020
Document Number: 95626
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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