VS-4ECU06-M3/9AT

VS-4ECU06-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 4 A FRED Pt® FEATURES Cathode • Ultrafast recovery time, reduced Qrr and soft recovery • 175 °C maximum operating junction temperature • For PFC CRM / CCM, snubber operation • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according to JEDEC® JESD 47 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode SMC (DO-214AB) LINKS TO ADDITIONAL RESOURCES DESCRIPTION / APPLICATIONS 3D 3D State of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop, ultrafast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element and snubbers. 3D Models PRIMARY CHARACTERISTICS IF(AV) 4A VR 600 V VF at IF 0.88 V trr typ. 45 ns TJ max. 175 °C Package SMC (DO-214AB) Circuit configuration Single MECHANICAL DATA Case: SMC (DO-214AB) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TL = 117 °C (1) Non-repetitive peak surge current IFSM TJ = 25 °C, 6 ms square pulse Operating junction and storage temperatures VALUES UNITS 600 V 4 A 120 TJ, TStg -55 to +175 °C Note (1) Mounted on PCB with minimum pad size ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 4 A - 1.07 1.3 IF = 4 A, TJ = 150 °C - 0.88 1.1 IR = 100 μA VR = VR rated - - 3 TJ = 150 °C, VR = VR rated - - 100 VR = 600 V - 7.8 - UNITS V μA pF Revision: 14-Apr-2021 Document Number: 94778 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-4ECU06-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V - 45 - IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 50 - IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 65 TJ = 25 °C - 41 - TJ = 125 °C - 72 - - 5.8 - - 8.0 - TJ = 25 °C - 121 - TJ = 125 °C - 300 - TJ = 25 °C TJ = 125 °C IF = 4 A dIF/dt = 200 A/μs VR = 390 V UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER MIN. TYP. MAX. UNITS Maximum junction and storage temperature range SYMBOL TJ, TStg TEST CONDITIONS -55 - +175 °C Thermal resistance, junction to mount RthJM (1) - - 14 Thermal resistance, junction to ambient RthJA (1) - - 80 Approximate Weight Marking device °C/W 0.24 g 0.008 oz. Case style SMC (DO-214AB) 4U6 100 1000 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Note (1) Mounted on PCB with minimum pad size TJ = 175 °C 10 1 TJ = 150 °C TJ = 25 °C TJ = -40 °C 0.1 175 °C 150 °C 10 125 °C 1 0.1 25 °C 0.01 0.001 0.0001 0 0.5 1.0 1.5 2.0 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 14-Apr-2021 Document Number: 94778 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-4ECU06-M3 www.vishay.com Vishay Semiconductors 6 Average Power Loss (W) CT - Junction Capacitance (pF) 100 10 1 5 RMS Limit 4 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 3 2 1 0 0 100 200 300 400 500 600 0 2 3 4 5 6 IF(AV) - Average Forward Current (A) VR - Reverse Voltage (V) Fig. 5 - Forward Power Loss Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 200 110 180 100 160 90 80 140 trr (ns) Allowable Case Temperature (°C) 1 DC 120 IF = 4 A, 125 °C 70 60 100 50 80 IF = 4 A, 25 °C 40 60 30 typical value 40 20 0 1 2 3 4 100 6 5 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery vs. dIF/dt 450 IF = 4 A, 125 °C 400 350 Qrr (nC) 300 250 200 IF = 4 A, 25 °C 150 100 50 typical value 0 100 1000 dIF/dt (A/µs) Fig. 7 - Typical Stored Charge vs. dIF/dt Revision: 14-Apr-2021 Document Number: 94778 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-4ECU06-M3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (4) Qrr - area under curve defined by trr and IRRM (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 8 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- 4 E C U 06 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (4 = 4 A) 3 - Circuit configuration: E = single diode 4 - C = SMC package 5 - Process type, U = ultrafast recovery 6 - Voltage code (06 = 600 V) 7 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-4ECU06-M3/9AT QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 9AT 3500 13"diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95402 Part marking information www.vishay.com/doc?95472 Packaging information www.vishay.com/doc?95404 Revision: 14-Apr-2021 Document Number: 94778 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SMC DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Document Number: 95402 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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