VS-50TPS12LHM3

VS-50TPS12LHM3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 50 A FEATURES 2 (A) • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Flexible solution for reliable AC power rectification 1 2 • Easy control peak current at charger power up to reduce passive / electromechanical components 3 TO-247AD 3L 1 (K) (G) 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS PRIMARY CHARACTERISTICS IT(AV) 50 A VDRM/VRRM 1200 V VTM (typ.) 1.2 V IGT (typ.) 45 mA • On-board and off-board EV / HEV battery chargers • Renewable energy inverters DESCRIPTION TJ max. 150 °C Package TO-247AD 3L Circuit configuration Single SCR The VS-50TPS12 high voltage series of silicon controlled rectifiers are specifically designed for medium power switching, and phase control applications. MAJOR RATINGS AND CHARACTERISTICS PARAMETER SYMBOL Peak repetitive reverse voltage VRRM / VDRM On-state voltage VT TEST CONDITIONS VALUES 50 A, TJ = 125 °C Average rectified forward current IT(AV) IRMS 79 Non-repetitive peak surge current ITSM 630 Operating junction and storage temperature range V 1.2 Maximum continuous RMS on-state current Maximum rate of rise UNITS 1200 50 A dv/dt 1000 V/μs TJ, TStg -40 to +150 °C VOLTAGE RATINGS PART NUMBER VS-50TPS12LHM3 VRRM / VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM / IDRM AT 150 °C mA 1200 1300 70 Revision: 27-Jul-2018 Document Number: 96108 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50TPS12LHM3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum continuous RMS on-state  current as AC switch Peak, one-cycle non-repetitive surge current SYMBOL IT(AV) TEST CONDITIONS TYP. TC = 112 °C, 180° conduction half sine wave IT(RMS) ITSM I2t for fusing I2t I2t for fusing I2t 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied MAX. UNITS - 50 - 79 - 530 - 630 - 1405 10 ms sine pulse, no voltage reapplied - 1986 t = 0.1 ms to 10 ms, no voltage reapplied, TJ = 125 °C - 19 850 10 ms sine pulse, rated VRRM applied Initial TJ = TJ maximum Low level value of threshold voltage VT(TO)1 - 0.89 High level value of threshold voltage VT(TO)2 - 0.97 - 6.77 - 6.32 50 A, TJ = 25 °C 1.2 1.32 100 A, TJ = 25 °C 1.4 1.6 - 150 - 300 Low level value of on-state slope resistance rt1 High level value of on-state slope resistance rt2 On-state voltage VT Rate of rise of turned-on current di/dt Holding current IH Latching current IL Reverse and direct leakage current Rate of rise of off-state voltage IRRM/IDRM dv/dt TJ = 125 °C TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 25 °C TJ = 25 °C - 350 - 0.05 A A2s A2s V m V A/μs mA TJ = 150 °C - 70 TJ = TJ maximum, linear to 80 % VDRM, Rg-k = 100 - 1000 V/μs TYP. MAX. UNITS - 10 - 2.5 - 2.5 TRIGGERING PARAMETER Peak gate power Average gate power Peak gate current Peak negative gate voltage SYMBOL PGM PG(AV) TEST CONDITIONS 10 ms sine pulse, no voltage reapplied IGM -VGM TJ = -40 °C Required DC gate voltage to trigger Required DC gate to trigger VGT IGT TJ = 25 °C Anode supply = 6 V resistive load VGD DC gate current not to trigger IGD 10 1.6 - 1.5 A V TJ = 150 °C - 1 TJ = -40 °C - 160 45 100 - 60 - 0.2 V - 3 mA UNITS TJ = 25 °C Anode supply = 6 V resistive load TJ = 150 °C DC gate voltage not to trigger - W TJ = 150 °C, VDRM = rated value mA SWITCHING PARAMETER SYMBOL TYP. MAX. Turn-on time tgt IT = 50 A, VD = 50 % VDRM, Igt = 300 mA, TJ = 25 °C TEST CONDITIONS 1.5 - Turn-off time tq IT = 50 A, VD = 80 % VDRM, dV/dt = 20 V/μs, tp = 200 μs  Igt = 100 mA, dI/dt = 10 A/μs, VR = 100 V, TJ = 150 °C 92 - μs Revision: 27-Jul-2018 Document Number: 96108 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50TPS12LHM3 www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TYP. MAX. UNITS TJ, TStg -40 150 °C RthJC - 0.35 - 40 0.2 - Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS Mounting torque TEST CONDITIONS Mounting surface, smooth, and greased minimum 6 (5) maximum 12 (10) Marking device Case style Super TO-247AD 3L °C/W kgf · cm (lbf · in) 50TPS12LH RthJ-HS CONDUCTION PER JUNCTION SINE HALF-WAVE CONDUCTION Maximum Allowable Case Temperature ( °C) VS-50TPS12LHM3 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.143 0.166 0.208 0.299 0.490 0.099 0.168 0.223 0.311 0.494 150 RthJC (DC) = 0.35 °C/W 140 30° Ø 60° 130 Conduction Angle 90° 120 120° 110 180° 100 90 0 10 RECTANGULAR WAVE CONDUCTION 180° 20 30 40 50 60 Max. Average On-state Power Loss (W) DEVICE 70 60 50 RMS limit 40 30 Ø 20 Conduction Angle 10 Tj = 150 °C 0 0 RthJC (DC) = 0.35 °C/W DC° Ø Conduction Angle 60° 120 90° 120° 110 180° 100 90 0 10 20 30 40 50 60 70 20 30 40 50 60 Fig. 3 - On-State Power Loss Characteristics 150 30° 10 Average On-state Current (A) 80 Max. Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) 180° 120° 90° 60° 30° 80 Fig. 1 - Current Rating Characteristics 130 °C/W 90 Average On - State Current (A) 140 UNITS 110 180° 120° 90° 60° 30° 100 90 80 DC 70 60 RMS limit 50 40 Ø 30 Conduction Angle 20 10 Tj = 150 °C 0 0 10 20 30 40 50 60 70 80 Average On - state Current (A) Average On-state Current (A) Fig. 2 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics Revision: 27-Jul-2018 Document Number: 96108 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50TPS12LHM3 Vishay Semiconductors Peak Half Sine Wave On- state Current (A) Peak Half Sine Wave On - state Current (A) www.vishay.com 560 At any rated load condition and with rated VRRM applied following surge. Initial Tj = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 510 460 410 360 310 260 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulse (N) 650 550 500 450 400 350 300 250 0.01 0.1 1 Number Of Equal Amplitude Half Cycle Current Pulse (N) Fig. 5 - Maximum Non-Repetitive Surge Current Instantaneous On - state Current (A) Maximum non repetitive surge current vs. pulse train duration. Control of conduction may not be maintained. Initial Tj = 150 °C No voltage reapplied rated VRRM reapplied 600 Fig. 6 - Maximum Non-Repetitive Surge Current 1000 100 TJ = 125 °C 10 TJ = 25 °C 1 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous On - state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 30 Ω tr = 0.5 μs, tp ≥ 6 μs b) Recommended load line for ≤ 30 % rated dI/dt: 20 V, 65 Ω tr = 1 μs, tp ≥ 6 μs (1) PGM = 100 W, tp = 500 μs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 2.5 ms (4) PGM = 10 W, tp = 5 ms 10 VGD 0.1 0.0001 IGD 0.001 50TPS12L Series 0.01 0.1 TJ = - 40 °C 1 TJ = 25 °C TJ = 150 °C Instantaneous Gate Voltage (V) 100 (4) b) a) (3) (2) (1) Frequency limited by PG(AV) 1 10 100 1000 Instantaneous Gate Current (A) Fig. 8 - Gate Characteristics Revision: 27-Jul-2018 Document Number: 96108 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50TPS12LHM3 ZthJC - Transient Thermal Impedance (°C/W) www.vishay.com Vishay Semiconductors 1 0.50 0.1 0.33 0.25 0.17 0.08 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 50 T P S 12 L H M3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Current code (50 = 50 A) 3 - Circuit configuration: T = thyristor 4 - P = TO-247AD package 5 - Type of silicon: 6 - Voltage code (12 = 1200 V) 7 - Package L = long lead 8 - H = AEC-Q101 qualified 9 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free S = standard recovery rectifier ORDERING INFORMATION (example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-50TPS12LHM3 25 contact factory Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions TO-247AD 3L www.vishay.com/doc?95626 Part marking information TO-247AD 3L www.vishay.com/doc?95007 Revision: 27-Jul-2018 Document Number: 96108 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 3L DIMENSIONS in millimeters and inches A A (3) (6) Φ P E B (2) R/2 A2 S (Datum B) Ø K M DBM Φ P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L (4) E1 A 0.01 M D B M View A - A See view B 2 x b2 3xb C 2x e b4 A1 0.10 M C A M (b1, b3, b5) Plating Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.46 5.46 BSC 0.254 19.81 20.32 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.53 0.215 BSC 0.010 0.780 0.800 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 06-Mar-2020 Document Number: 95626 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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