VS-60.PF0.-M3 Series
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Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 60 A
FEATURES
• Glass passivated pellet chip junction
• 150 °C max. operating junction temperature
• Low forward voltage drop and short reverse
recovery time
1
1
2
3
3
TO-247AC 2L
TO-247AC 3L
2
2
1
Cathode
according
to
Available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Base
cathode
Base
cathode
• Designed and qualified
JEDEC®-JESD 47
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
3
Anode
Anode
1
VS-30EPF1...
Anode
3
VS-30APF1...
PRIMARY CHARACTERISTICS
IF(AV)
60 A
VR
200 V, 400 V, 600 V
VF at IF
1.3 V
IFSM
830 A
trr
70 ns
TJ max.
150 °C
Package
TO-247AC 2L, TO-247AC 3L
Circuit configuration
Single
Snap factor
0.5
DESCRIPTION
The VS-65EPF006-M3and VS-65APF006-M3 soft recovery
rectifier series has been optimized for combined short
reverse recovery time and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
IF(AV)
Sinusoidal waveform
VALUES
UNITS
200 to 600
V
60
830
IFSM
A
trr
1 A, 100 A/μs
70
VF
30 A, TJ = 25 °C
1.1
V
-40 to +150
°C
TJ
ns
VOLTAGE RATINGS
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
VS-60EPF02-M3, VS-60APF02-M3
200
300
VS-60EPF04-M3, VS-60APF04-M3
400
500
VS-60EPF06-M3, VS-60APF06-M3
600
700
PART NUMBER
IRRM
AT 150 °C
mA
10
Revision: 29-Nov-2019
Document Number: 93710
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VS-60.PF0.-M3 Series
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
SYMBOL
TEST CONDITIONS
IF(AV)
TC = 106 °C, 180° conduction half sine wave
60
10 ms sine pulse, rated VRRM applied
700
10 ms sine pulse, no voltage reapplied
830
IFSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
I2√t
VALUES
10 ms sine pulse, rated VRRM applied
2450
10 ms sine pulse, no voltage reapplied
3460
t = 0.1 ms to 10 ms, no voltage reapplied
UNITS
A
A2s
34 600
A2√s
VALUES
UNITS
1.3
V
5.0
mΩ
0.88
V
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
VFM
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
60 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
0.1
VR = Rated VRRM
TJ = 150 °C
mA
10
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
S
TEST CONDITIONS
IF at 60 Apk
25 A/μs
25 °C
VALUES
UNITS
180
ns
3.4
A
0.5
Typical
IFM
trr
ta
tb
t
dir
dt
μC
0.5
Qrr
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
DC operation
UNITS
-40 to +150
°C
0.4
°C/W
40
Mounting surface, smooth and greased
0.2
6
g
0.21
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(Ibf · in)
Approximate weight
Mounting torque
VALUES
60EPF02
Case style TO-247AC 2L
60EPF04
60EPF06
Marking device
60APF02
Case style TO-247AC 3L
60APF04
60APF06
Revision: 29-Nov-2019
Document Number: 93710
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60.PF0.-M3 Series
www.vishay.com
Vishay Semiconductors
140
60.PF.. Series
RthJC (DC) = 0.4 K/W
140
130
Ø
Conduction angle
120
110
120°
60°
100
90°
30°
180°
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
150
0
10
30
20
40
50
60
DC
80
RMS limit
60
Ø
40
Conduction period
60.PF.. Series
TJ = 150 °C
20
70
20
0
40
60
80
100
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
150
800
60.PF.. Series
RthJC (DC) = 0.4 K/W
140
130
Ø
Conduction period
120
110
60°
100
90°
30°
At any rated load condition and with
rated VRRM applied following surge.
700
Peak Half Sine Wave
Forward Current (A)
Maximum Allowable Case
Temperature (°C)
100
0
90
Initial TJ = 175 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
600
500
400
300
120°
60.PF.. Series
DC
180°
200
90
20
0
40
80
60
100
1
10
100
Average Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
900
90
180°
120°
90°
60°
30°
80
70
60
800
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
180°
120°
90°
60°
30°
120
RMS limit
50
40
30
Ø
Conduction angle
20
60.PF.. Series
TJ = 150 °C
10
0
10
20
30
40
50
60
70
Initial TJ = 195 °C
No voltage reapplied
Rated VRRM reapplied
700
600
500
400
300
200
0
Maximum non-repetitive surge current
versus pulse train duration.
100
0.01
60.PF.. Series
0.1
1
Average Forward Current (A)
Pulse Train Duration (s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 29-Nov-2019
Document Number: 93710
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VS-60.PF0.-M3 Series
Instantaneous Forward Current (A)
www.vishay.com
Vishay Semiconductors
1000
100
TJ = 25 °C
TJ = 150 °C
10
60.PF.. Series
1
1.0
0.5
0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
4
0.20
Qrr - Typical Reverse
Recovery Charge (µC)
trr - Typical Reverse
Recovery Time (µs)
IFM = 60 A
IFM = 30 A
0.15
IFM = 10 A
0.10
IFM = 5 A
60.PF.. Series
TJ = 25 °C
60.PF.. Series
TJ = 25 °C
IFM = 60 A
3
IFM = 30 A
2
IFM = 10 A
1
IFM = 5 A
IFM = 1 A
IFM = 1 A
0.05
0
0
80
40
160
120
200
0
dI/dt - Rate of Fall of Forward Current (A/µs)
120
200
160
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
5
0.45
60.PF.. Series
TJ = 150 °C
0.35
IFM = 60 A
0.30
IFM = 30 A
0.25
IFM = 10 A
0.20
IFM = 5 A
0.15
60.PF.. Series
TJ = 150 °C
Qrr - Typical Reverse
Recovery Charge (µC)
0.40
trr - Typical Reverse
Recovery Time (µs)
80
40
IFM = 60 A
4
IFM = 30 A
3
IFM = 10 A
2
IFM = 5 A
1
IFM = 1 A
IFM = 1 A
0
0.10
10
20
30
40
50
60
70
80
90
100
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
10
20
30
40
50
60
70
80
90
100
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Revision: 29-Nov-2019
Document Number: 93710
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60.PF0.-M3 Series
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Vishay Semiconductors
25
60.PF.. Series
TJ = 25 °C
20
60.PF.. Series
TJ = 150 °C
IFM = 60 A
Irr - Typical Reverse
Recovery Current (A)
Irr - Typical Reverse
Recovery Current (A)
25
IFM = 30 A
15
IFM = 10 A
10
IFM = 5 A
IFM = 1 A
5
0
IFM = 60 A
IFM = 30 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
15
10
5
0
40
0
80
120
160
200
10
dI/dt - Rate of Fall of Forward Current (A/µs)
20
30
40
50
60
70
80
90
100
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
ZthJC - Transient Thermal Impedance (K/W)
20
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
1
Steady state value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
60.PF.. Series
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 29-Nov-2019
Document Number: 93710
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60.PF0.-M3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
60
E
P
F
06
-M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (60 = 60 A)
3
-
Circuit configuration:
E = single diode, 2 pins
A = single diode, 3 pins
4
-
Package:
P = TO-247AC 3L / TO-247AC 2L
5
-
Type of silicon:
F = fast recovery
6
-
Voltage code x 100 = VRRM
7
-
Environmental digit:
02 = 200 V
04 = 400 V
06 = 600 V
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-60EPF02-M3
25
500
Antistatic plastic tubes
VS-60APF02-M3
25
500
Antistatic plastic tubes
VS-60EPF04-M3
25
500
Antistatic plastic tubes
VS-60APF04-M3
25
500
Antistatic plastic tubes
VS-60EPF06-M3
25
500
Antistatic plastic tubes
VS-60APF06-M3
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
TO-247AC 2L
www.vishay.com/doc?96144
TO-247AC 3L
www.vishay.com/doc?96138
TO-247AC 2L
www.vishay.com/doc?95648
TO-247AC 3L
www.vishay.com/doc?95007
www.vishay.com/doc?95275
Revision: 29-Nov-2019
Document Number: 93710
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
1
Document Number: 91000