VS-ETU1506SHM3, VS-ETU1506-1HM3
www.vishay.com
Vishay Semiconductors
Ultra Fast Rectifier, 15 A FRED Pt®
FEATURES
4
4
• Low forward voltage drop
• Ultrafast recovery time
• 175 °C operating junction temperature
2
• Low leakage current
3
1
1
D2PAK (TO-263AB)
2
3
• AEC-Q101 qualified, meets JESD 201 class 1
whisker test
TO-262AA
Base
cathode
2, 4
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2, 4
DESCRIPTION
VS-ETU1506SHM3
State of the art, ultralow VF, soft-switching ultrafast rectifiers
optimized for Discontinuous (Critical) Mode (DCM) Power
Factor Correction (PFC).
3
Anode
1
N/C
3
Anode
1
N/C
VS-ETU1506-1HM3
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
PRIMARY CHARACTERISTICS
Package
D2PAK (TO-263AB), TO-262AA
IF(AV)
15 A
VR
600 V
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
VF at IF
1.1 V
APPLICATIONS
trr (typ.)
24 ns
TJ max.
175 °C
Circuit configuration
Single
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adapters, desktop PC, TV and
monitor, games units, and DVD AC/DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
600
V
Repetitive peak reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 143 °C
15
Non-repetitive peak surge current
IFSM
TC = 25 °C
160
Operating junction and storage temperatures
TJ, TStg
A
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 15 A
-
1.35
1.9
IR = 100 μA
IF = 15 A, TJ = 150 °C
-
1.1
1.3
VR = VR rated
-
0.01
15
TJ = 150 °C, VR = VR rated
-
20
200
UNITS
V
μA
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
12
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
-
nH
Revision: 31-May-17
Document Number: 95978
1
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VS-ETU1506SHM3, VS-ETU1506-1HM3
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
-
-
28
TJ = 25 °C
-
40
-
TJ = 125 °C
-
87
-
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
Qrr
Reverse recovery time
trr
Peak recovery current
IRRM
TJ = 25 °C
TJ = 125 °C
IF = 15 A
dIF/dt = 200 A/μs
VR = 390 V
-
5
-
-
9.0
-
TJ = 25 °C
-
107
-
TJ = 125 °C
-
430
-
UNITS
ns
A
C
-
53
-
ns
-
25
-
A
-
730
-
nC
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-65
-
175
°C
Thermal resistance,
junction to case
RthJC
-
-
1.51
°C/W
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
70
Thermal resistance,
case to heat sink
RthCS
Mounting surface, flat, smooth and
greased
-
0.5
-
-
2.0
-
-
0.07
-
oz.
-
12
(10)
kgf · cm
(lbf · in)
Reverse recovery charge
TJ = 125 °C
Qrr
IF = 15 A
dIF/dt = 800 A/μs
VR = 390 V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
Weight
6
(5)
Mounting torque
Case style D2PAK
ETU1506SH
Case style TO-262
ETU1506-1H
1000
100
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Marking device
TJ = 175 °C
10
TJ = 150 °C
TJ = 25 °C
1
0.5
g
175 °C
100
150 °C
10
125 °C
1
100 °C
75 °C
0.1
50 °C
0.01
25 °C
0.001
0.0001
1.0
1.5
2.0
2.5
0
100
200
300
400
500
600
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 31-May-17
Document Number: 95978
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETU1506SHM3, VS-ETU1506-1HM3
www.vishay.com
Vishay Semiconductors
CT - Junction Capacitance (pF)
1000
100
10
1
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.5
D = 0.2
D = 0.1
0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1 - Rectangular Pulse Duration (s)
180
30
170
25
Average Power Loss (W)
Allowable Case Temperature (°C)
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
160
150
DC
140
130
RMS Limit
20
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
15
10
5
0
120
0
5
10
15
20
25
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
0
5
10
15
20
25
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 31-May-17
Document Number: 95978
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETU1506SHM3, VS-ETU1506-1HM3
www.vishay.com
Vishay Semiconductors
120
900
110
800
100
90
700
IF = 15 A, 125 °C
Qrr (nC)
trr (ns)
70
60
50
500
400
300
40
30
IF = 15 A, 125 °C
600
80
IF = 15 A, 25 °C
200
IF = 15 A, 25 °C
20
10
typical value
10
100
typical value
0
100
1000
1000
dIFdt (A/μs)
dIFdt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 31-May-17
Document Number: 95978
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
E
T
U
15
06
S
TRL
H
M3
1
2
3
4
5
6
7
8
9
10
1
-
Vishay Semiconductors product
2
-
3
-
Circuit configuration
E = single diode
T = TO-220
4
-
U = ultrafast recovery time
5
-
Current code (15 = 15 A)
6
-
Voltage code (06 = 600 V)
7
-
• S = D2PAK
-
• -1 = TO-262
-
• None = tube (50 pieces)
-
• TRL = tape and reel (left oriented, for D2PAK package)
-
• TRR = tape and reel (right oriented, for D2PAK package)
9
-
H = AEC-Q101 qualified
10
-
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
8
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-ETU1506SHM3
50
1000
Antistatic plastic tube
VS-ETU1506-1HM3
50
1000
Antistatic plastic tube
VS-ETU1506STRRHM3
800
800
13" diameter reel
VS-ETU1506STRLHM3
800
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
TO-263AB (D2PAK)
www.vishay.com/doc?95046
TO-262AA
www.vishay.com/doc?95419
(D2PAK)
www.vishay.com/doc?95444
TO-262AA
www.vishay.com/doc?95443
(D2PAK)
www.vishay.com/doc?95032
TO-263AB
TO-263AB
www.vishay.com/doc?96132
Revision: 31-May-17
Document Number: 95978
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
Base
Metal
(4)
b1, b3
H
2x e
Gauge
plane
c1 (4)
(c)
B
0° to 8°
Seating
plane
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
4
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-262
DIMENSIONS in millimeters and inches
Modified JEDEC® outline TO-262
(Datum A) (2) (3)
E
A
A
c2
B
E
A
(3) L1
Seating
plane
D
1
2 3
C
L2
B
D1 (3)
B
C
L (2)
A
c
3 x b2
3xb
E1
A1
(3)
Section A - A
2xe
Plating
0.010 M A M B
(4)
b1, b3
Base
metal
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Lead tip
SYMBOL
c1
c
(4)
(b, b2)
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
0.190
NOTES
A
4.06
4.83
0.160
A1
2.03
3.02
0.080
0.119
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
D1
6.86
8.00
0.270
0.315
3
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
e
L
2.54 BSC
4
4
4
2
0.100 BSC
13.46
14.10
0.530
0.555
L1
-
L2
3.36
1.65
-
0.065
3.71
0.132
0.146
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
(5)
(6)
3
Dimension b1 and c1 apply to base metal only
Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum),
b (minimum) , D1 (minimum) and L2 where dimensions derived
the actual package outline
Revision: 11-Jul-2019
Document Number: 95419
1
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Revision: 09-Jul-2021
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