VS-GB50LA120UX
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Vishay Semiconductors
“Low Side Chopper” IGBT SOT-227
(Ultrafast IGBT), 50 A
FEATURES
• NPT Gen 5 IGBT technology
• Square RBSOA
• HEXFRED® clamping diode
• Positive VCE(on) temperature coefficient
• Fully isolated package
SOT-227
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VCES
1200 V
IC DC
50 A at 92 °C
VCE(on) typical at 50 A, 25 °C
3.22 V
Speed
8 kHz to 30 kHz
Package
SOT-227
Circuit
Chopper low side switch
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
SYMBOL
TEST CONDITIONS
VCES
IC
TC = 25 °C
TC = 80 °C
MAX.
UNITS
1200
V
84
57
Pulsed collector current
ICM
150
Clamped inductive load current
ILM
150
Diode continuous forward current
Gate to emitter voltage
Power dissipation, IGBT
Power dissipation, diode
RMS isolation voltage
IF
TC = 25 °C
76
TC = 80 °C
52
VGE
PD
PD
VISOL
± 20
TC = 25 °C
431
TC = 80 °C
242
TC = 25 °C
278
TC = 80 °C
156
Any terminal to case, t = 1 min
2500
A
V
W
V
Revision: 11-Jun-15
Document Number: 93102
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown
voltage
SYMBOL
VBR(CES)
Collector to emitter voltage
VCE(on)
Gate threshold voltage
VGE(th)
Temperature coefficient of
threshold voltage
VGE(th)/TJ
Collector to emitter leakage current
ICES
Diode reverse breakdown voltage
VBR
Diode forward voltage drop
VFM
Diode reverse leakage current
IRM
Gate to emitter leakage current
IGES
TEST CONDITIONS
MIN.
TYP.
MAX.
VGE = 0 V, IC = 1 mA
1200
-
-
VGE = 15 V, IC = 25 A
-
2.46
-
VGE = 15 V, IC = 50 A
-
3.22
2.80
VGE = 15 V, IC = 25 A, TJ = 125 °C
-
2.84
3.60
VGE = 15 V, IC = 50 A, TJ = 125 °C
-
3.78
3.00
VCE = VGE, IC = 500 μA
4
5
4
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
-
-10
-
UNITS
V
mV/°C
VGE = 0 V, VCE = 1200 V
-
6
50
μA
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
-
0.7
2.0
mA
V
IR = 1 mA
1200
-
-
IC = 25 A, VGE = 0 V
-
1.99
2.42
IC = 50 A, VGE = 0 V
-
2.53
3.00
IC = 25 A, VGE = 0 V, TJ = 125 °C
-
1.96
2.30
IC = 50 A, VGE = 0 V, TJ = 125 °C
-
2.66
3.08
V
VR = VR rated
-
4
50
μA
TJ = 125 °C, VR = VR rated
-
0.6
3.0
mA
VGE = ± 20 V
-
-
± 200
nA
MIN.
TYP.
MAX.
UNITS
-
400
-
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Total gate charge (turn-on)
Qg
Gate to emitter charge (turn-on)
Qge
Gate to collector charge (turn-on)
Qgc
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
tr
TEST CONDITIONS
IC = 50 A, VCC = 600 V, VGE = 15 V
IC = 50 A, VCC = 600 V,
VGE = 15 V, Rg = 5
L = 500 μH, TJ = 25 °C
IC = 50 A, VCC = 600 V,
VGE = 15 V, Rg = 5
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
td(off)
tf
RBSOA
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
-
43
-
-
187
-
-
2.72
-
-
1.11
-
-
3.83
-
-
3.94
-
-
2.31
-
-
6.25
-
-
191
-
-
53
-
-
223
-
-
143
-
TJ = 150 °C, IC = 150 A, Rg = 22
VGE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
IF = 50 A, dIF/dt = 200 A/μs,
VR = 200 V, TJ = 125 °C
nC
mJ
ns
Fullsquare
-
129
161
-
11
14
ns
A
-
700
1046
nC
-
208
257
ns
-
17
21
A
-
1768
2698
nC
Revision: 11-Jun-15
Document Number: 93102
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
TJ, TStg
-40
-
Junction and storage temperature range
IGBT
Junction to case
RthJC
Diode
MAX.
UNITS
-
150
°C
-
0.29
-
-
0.45
-
0.05
-
Weight
-
30
-
g
Mounting torque
-
-
1.3
Nm
Case to heatsink
RthCS
Flat, greased surface
SOT-227
160
200
140
175
120
150
100
125
IC (A)
Allowable Case Temperature (°C)
Case style
80
60
TJ = 25 °C
100
TJ = 125 °C
75
40
50
20
25
0
0
10
20
30
40
50
60
70
80
0
90
0
1
2
3
IC - Continuous Collector Current (A)
100
1
ICES (mA)
10
1
0.1
1
10
100
1000
VCE (V)
Fig. 2 - IGBT Reverse Bias SOA
TJ = 150 °C, VGE = 15 V
10 000
6
7
8
TJ = 125 °C
0.1
0.01
TJ = 25 °C
0.001
0.01
5
Fig. 3 - Typical IGBT Collector Current Characteristics
1000
10
4
VCE (V)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
IC (A)
°C/W
0.0001
100
300
500
700
900
1100
VCES (V)
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
Revision: 11-Jun-15
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200
5.5
TJ = 25 °C
175
5.0
TJ = 25 °C
125
4.5
IF (A)
Vgeth (V)
150
4.0
TJ = 125 °C
100
75
TJ = 125 °C
50
3.5
25
0
3.0
0.0002
0.0004
0.0006
0.0008
0.001
0
3
4
5
6
VFM (V)
Fig. 5 - Typical IGBT Threshold Voltage
Fig. 8 - Typical Diode Forward Characteristics
4
5
3
100 A
Energy (mJ)
VCE (V)
2
IC (mA)
6
4
50 A
3
Eon
2
Eoff
1
25 A
0
2
10
30
50
70
90
110
130
10
150
20
30
40
50
TJ (°C)
IC (A)
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, VGE = 15 V
Fig. 9 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 , VGE = 15 V
1000
160
140
Switching Time (ns)
Allowable Case Temperature (°C)
1
120
100
80
60
40
td(off)
td(on)
tf
100
tr
20
0
10
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
IF - Continuous Forward Current (A)
IC (A)
Fig. 7 - Maximum DC Forward Current vs.
Case Temperature
Fig. 10 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 , VGE = 15 V
Revision: 11-Jun-15
Document Number: 93102
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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12
250
230
10
210
8
190
trr (ns)
Energy (mJ)
Eon
6
4
170
TJ = 125 °C
150
130
TJ = 25 °C
110
Eoff
2
90
0
0
10
20
30
40
70
100
50
1000
Rg (Ω)
dIF/dt (A/µs)
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 50 A, L = 500 μH,
VCC = 600 V, VGE = 15 V
Fig. 13 - Typical trr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
40
1000
td(off)
30
td(on)
TJ = 125 °C
25
tf
Irr (A)
Switching Time (ns)
35
100
20
15
TJ = 25 °C
tr
10
5
10
0
10
20
30
40
0
100
50
1000
Rg (Ω)
dIF/dt (A/µs)
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 600 V,
IC = 50 A, VGE = 15 V
Fig. 14 - Typical Irr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
2650
2400
2150
TJ = 125 °C
Qrr (nC)
1900
1650
1400
1150
900
TJ = 25 °C
650
400
100
1000
dIF/dt (A/µs)
Fig. 15 - Typical Qrr Diode vs. dIF/dt, VR = 200 V, IF = 50 A
Revision: 11-Jun-15
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ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
DC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
DC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode)
Revision: 11-Jun-15
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R=
L
D.U.T.
VCC
ICM
VC *
50 V
1000 V
D.U.T.
1
2
+
-V
CC
Rg
* Driver same type as D.U.T.; VC = 80 % of Vce(max)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
Fig. 18a - Clamped Inductive Load Test Circuit
Fig. 18b - Pulsed Collector Current Test Circuit
Diode clamp/
D.U.T.
L
- +
-5V
+
VCC
D.U.T./
driver
Rg
Fig. 19a - Switching Loss Test Circuit
1
2
90 %
10 %
3
VC
90 %
td(off)
10 %
IC
5%
tf
tr
td(on)
t = 5 µs
Eoff
Eon
Ets = (Eon + Eoff)
Fig. 19b - Switching Loss Waveforms Test Circuit
Revision: 11-Jun-15
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ORDERING INFORMATION TABLE
Device code
VS-
G
B
50
L
A
120
U
X
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Insulated Gate Bipolar Transistor (IGBT)
3
-
B = IGBT Generation 5
4
-
Current rating (50 = 50 A)
5
-
Circuit configuration (L = Low side chopper)
6
-
Package indicator (A = SOT-227)
7
-
Voltage rating (120 = 1200 V)
8
-
Speed/type (U = Ultrafast IGBT)
9
-
X = F/W HEXFRED® diode
CIRCUIT CONFIGURATION
1
4
3
2
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95036
Packaging information
www.vishay.com/doc?95037
Revision: 11-Jun-15
Document Number: 93102
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Outline Dimensions
Vishay Semiconductors
SOT-227
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Chamfer
2.00 (0.079) x 45°
4 x M4 nuts
Ø 4.40 (0.173)
Ø 4.20 (0.165)
-A3
4
6.25 (0.246)
12.50 (0.492)
25.70 (1.012)
25.20 (0.992)
-B-
1
2
R full
7.50 (0.295)
15.00 (0.590)
30.20 (1.189)
29.80 (1.173)
8.10 (0.319)
4x
7.70 (0.303)
2.10 (0.082)
1.90 (0.075)
0.25 (0.010) M C A M B M
2.10 (0.082)
1.90 (0.075)
-C-
12.30 (0.484)
11.80 (0.464)
0.12 (0.005)
Notes
• Dimensioning and tolerancing per ANSI Y14.5M-1982
• Controlling dimension: millimeter
Document Number: 95036
Revision: 28-Aug-07
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
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Document Number: 91000