VS-GB50NA120UX

VS-GB50NA120UX www.vishay.com Vishay Semiconductors “High Side Chopper” IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES • NPT Gen 5 IGBT technology • Square RBSOA • HEXFRED® clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 PRODUCT SUMMARY • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VCES 1200 V IC DC 50 A at 92 °C VCE(on) typical at 50 A, 25 °C 3.22 V Speed 8 kHz to 30 kHz Package SOT-227 Circuit High side switch BENEFITS • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting on heatsink • Plug-in compatible with other SOT-227 packages • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 1200 V TC = 25 °C 84 TC = 80 °C 57 Pulsed collector current ICM 150 Clamped inductive load current ILM 150 Diode continuous forward current IF Gate to emitter voltage VGE Power dissipation, IGBT PD Power dissipation, diode RMS isolation voltage PD VISOL A TC = 25 °C 76 TC = 80 °C 52 ± 20 TC = 25 °C 431 TC = 80 °C 242 TC = 25 °C 278 V W TC = 80 °C 156 Any terminal to case, t = 1 min 2500 V Revision: 11-Jun-15 Document Number: 93101 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB50NA120UX www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage SYMBOL VBR(CES) Collector to emitter voltage VCE(on) Gate threshold voltage VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ Collector to emitter leakage current ICES Diode reverse breakdown voltage VBR Diode forward voltage drop VFM Diode reverse leakage current IRM Gate to emitter leakage current IGES TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 1 mA 1200 - - VGE = 15 V, IC = 25 A - 2.46 - VGE = 15 V, IC = 50 A - 3.22 2.80 VGE = 15 V, IC = 25 A, TJ = 125 °C - 2.84 3.60 UNITS V VGE = 15 V, IC = 50 A, TJ = 125 °C - 3.78 3.0 VCE = VGE, IC = 500 μA 4 5 4 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - -10 - mV/°C VGE = 0 V, VCE = 1200 V - 6 50 μA VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 0.7 2.0 mA 1200 - - V IC = 25 A, VGE = 0 V - 1.99 2.42 IC = 50 A, VGE = 0 V - 2.53 3.00 IC = 25 A, VGE = 0 V, TJ = 125 °C - 1.96 2.30 IC = 50 A, VGE = 0 V, TJ = 125 °C - 2.66 3.08 IR = 1 mA V VR = VR rated - 4 50 μA TJ = 125 °C, VR = VR rated - 0.6 3 mA VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Turn-on switching loss Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff - 400 - IC = 50 A, VCC = 600 V, VGE = 15 V - 43 - Qgc - 187 - Eon IC = 50 A, VCC = 600 V, VGE = 15 V, Rg = 5  L = 500 μH, TJ = 25 °C - 2.72 - - 1.11 - - 3.83 - - 3.94 - - 2.31 - - 6.25 - - 191 - Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time Reverse bias safe operating area TEST CONDITIONS tr IC = 50 A, VCC = 600 V, VGE = 15 V, Rg = 5   L = 500 μH, TJ = 125 °C Energy losses include tail and diode recovery (see fig. 18) td(off) tf RBSOA Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr - 53 - - 223 - - 143 - TJ = 150 °C, IC = 150 A, Rg = 22  VGE = 15 V to 0 V, VCC = 900 V, VP = 1200 V IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V IF = 50 A, dIF/dt = 200 A/μs,  VR = 200 V, TJ = 125 °C nC mJ ns Fullsquare - 129 161 ns - 11 14 A - 700 1046 nC - 208 257 ns - 17 21 A - 1768 2698 nC Revision: 11-Jun-15 Document Number: 93101 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB50NA120UX www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction and storage temperature range SYMBOL MIN. TYP. MAX. UNITS TJ, TStg -40 - 150 °C - - 0.29 - - 0.45 - 0.05 - - 30 - g - - 1.3 Nm IGBT Junction to case RthJC Diode Case to heatsink RthCS Flat, greased surface Weight Mounting torque SOT-227 160 200 140 175 120 150 100 125 IC (A) Allowable Case Temperature (°C) Case style 80 TJ = 25 °C 100 60 75 40 50 20 25 0 TJ = 125 °C 0 0 10 20 30 40 50 60 70 80 90 0 1 2 3 IC - Continuous Collector Current (A) 100 1 ICES (mA) 10 1 0.1 1 10 100 1000 VCE (V) Fig. 2 - IGBT Reverse Bias SOA TJ = 150 °C, VGE = 15 V 10 000 6 7 8 TJ = 125 °C 0.1 0.01 TJ = 25 °C 0.001 0.01 5 VCE (V) 1000 10 4 Fig. 3 - Typical IGBT Collector Current Characteristics Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature IC (A) °C/W 0.0001 100 300 500 700 900 1100 VCES (V) Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current Revision: 11-Jun-15 Document Number: 93101 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB50NA120UX www.vishay.com Vishay Semiconductors 200 5.5 TJ = 25 °C 175 5.0 TJ = 25 °C 125 4.5 IF (A) Vgeth (V) 150 4.0 TJ = 125 °C 100 75 TJ = 125 °C 50 3.5 25 0 3.0 0.0002 0.0004 0.0006 0.0008 0.001 0 3 4 5 6 VFM (V) Fig. 5 - Typical IGBT Threshold Voltage Fig. 8 - Typical Diode Forward Characteristics 4 5 3 100 A Energy (mJ) VCE (V) 2 IC (mA) 6 4 50 A 3 Eon 2 Eoff 1 25 A 0 2 10 30 50 70 90 110 130 10 150 20 30 40 50 TJ (°C) IC (A) Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V Fig. 9 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V 1000 160 140 Switching Time (ns) Allowable Case Temperature (°C) 1 120 100 80 60 40 td(off) td(on) tf 100 tr 20 0 10 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 IF - Continuous Forward Current (A) IC (A) Fig. 7 - Maximum DC Forward Current vs. Case Temperature Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V Revision: 11-Jun-15 Document Number: 93101 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB50NA120UX www.vishay.com Vishay Semiconductors 12 250 230 10 210 8 190 trr (ns) Energy (mJ) Eon 6 4 170 TJ = 125 °C 150 130 TJ = 25 °C 110 Eoff 2 90 0 0 10 20 30 40 70 100 50 1000 Rg (Ω) dIF/dt (A/µs) Fig. 11 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, IC = 50 A, L = 500 μH, VCC = 600 V, VGE = 15 V Fig. 13 - Typical trr Diode vs. dIF/dt VR = 200 V, IF = 50 A 40 1000 td(off) 30 td(on) TJ = 125 °C 25 tf Irr (A) Switching Time (ns) 35 100 20 15 TJ = 25 °C tr 10 5 10 0 10 20 30 40 0 100 50 1000 Rg (Ω) dIF/dt (A/µs) Fig. 12 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, L = 500 μH, VCC = 600 V, IC = 50 A, VGE = 15 V Fig. 14 - Typical Irr Diode vs. dIF/dt VR = 200 V, IF = 50 A 2650 2400 2150 TJ = 125 °C Qrr (nC) 1900 1650 1400 1150 900 TJ = 25 °C 650 400 100 1000 dIF/dt (A/µs) Fig. 15 - Typical Qrr Diode vs. dIF/dt, VR = 200 V, IF = 50 A Revision: 11-Jun-15 Document Number: 93101 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB50NA120UX www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 DC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 DC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode) Revision: 11-Jun-15 Document Number: 93101 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB50NA120UX www.vishay.com Vishay Semiconductors R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 18a - Clamped Inductive Load Test Circuit Fig. 18b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V + VCC D.U.T./ driver Rg Fig. 19a - Switching Loss Test Circuit 1 2 90 % 10 % 3 VC 90 % td(off) 10 % IC 5% tf tr td(on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig. 19b - Switching Loss Waveforms Test Circuit Revision: 11-Jun-15 Document Number: 93101 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB50NA120UX www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G B 50 N A 120 U X 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - B = IGBT Generation 5 4 - Current rating (50 = 50 A) 5 - Circuit configuration (N = High side chopper) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (120 = 1200 V) 8 - Speed/type (U = Ultrafast IGBT) 9 - X = F/W HEXFRED® diode CIRCUIT CONFIGURATION 4 3 1 2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95036 Packaging information www.vishay.com/doc?95037 Revision: 11-Jun-15 Document Number: 93101 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45° 4 x M4 nuts Ø 4.40 (0.173) Ø 4.20 (0.165) -A3 4 6.25 (0.246) 12.50 (0.492) 25.70 (1.012) 25.20 (0.992) -B- 1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C- 12.30 (0.484) 11.80 (0.464) 0.12 (0.005) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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