VS-GT100NA120UX

VS-GT100NA120UX www.vishay.com Vishay Semiconductors “High Side Chopper” IGBT SOT-227 (Trench IGBT), 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED® clamping diode • 10 μs short circuit capability • Fully isolated package SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VCES 1200 V IC DC 100 A at 71 °C VCE(on) typical at 100 A, 25 °C 2.36 V Speed 8 kHz to 30 kHz Package SOT-227 Circuit High side switch BENEFITS • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting on heatsink • Plug-in compatible with other SOT-227 packages • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 1200 V TC = 25 °C 134 TC = 80 °C 92 Pulsed collector current ICM 270 Clamped inductive load current ILM 270 Diode continuous forward current IF Gate to emitter voltage VGE Power dissipation, IGBT PD Power dissipation, diode RMS isolation voltage PD VISOL A TC = 25 °C 87 TC = 80 °C 59 ± 20 TC = 25 °C 463 TC = 80 °C 260 TC = 25 °C 338 TC = 80 °C 190 Any terminal to case, t = 1 min 2500 V W V Revision: 11-Jun-15 Document Number: 93100 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT100NA120UX www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage SYMBOL VBR(CES) VCE(on) VGE(th) VGE(th)/TJ Collector to emitter leakage current ICES Diode reverse breakdown voltage VBR Diode forward voltage drop VFM Diode reverse leakage current IRM Gate to emitter leakage current IGES TEST CONDITIONS VGE = 0 V, IC = 1 mA MIN. TYP. MAX. 1200 - - UNITS VGE = 15 V, IC = 50 A - 1.79 2.33 VGE = 15 V, IC = 100 A - 2.36 2.85 VGE = 15 V, IC = 50 A, TJ = 125 °C - 2.05 2.62 VGE = 15 V, IC = 100 A, TJ = 125 °C - 2.8 3.42 VCE = VGE, IC = 500 μA 5 5.8 7 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - -15.6 - mV/°C VGE = 0 V, VCE = 1200 V - 0.5 100 μA VGE = 0 V, VCE = 1200 V, TJ = 125 °C V - 0.052 2 mA 1200 - - V IC = 50 A, VGE = 0 V - 2.53 3.55 IC = 100 A, VGE = 0 V - 3.32 4.35 IC = 50 A, VGE = 0 V, TJ = 125 °C - 2.66 3.70 IC = 100 A, VGE = 0 V, TJ = 125 °C - 3.7 4.50 VR = VR rated - 4 50 μA TJ = 125 °C, VR = VR rated - 0.6 3 mA VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS IR = 1 mA V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr TEST CONDITIONS IC = 100 A, VCC = 600 V, VGE = 15 V IC = 100 A, VCC = 600 V, VGE = 15 V, Rg = 5  L = 500 μH IC = 100 A, VCC = 600 V, VGE = 15 V, Rg = 5   L = 500 μH, TJ = 125 °C Energy losses include tail and diode recovery (see fig. 18) td(off) tf Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 270 A, Rg = 22  VGE = 15 V to 0 V, VCC = 900 V, VP = 1200 V Short circuit safe operating area SCSOA TJ = 150 °C, Rg = 22  VGE = 15 V to 0 V, VCC = 900 V, VP = 1200 V Diode reverse recovery time Diode peak reverse current Irr Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr 400 - 120 - - 170 - - 21.9 - - 5.48 - - 27.38 - - 23.6 - - 7.65 - - 31.25 - - 195 - - 259 - - 188 - - 212 - IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V IF = 50 A, dIF/dt = 200 A/μs,  VR = 200 V, TJ = 125 °C nC mJ ns Fullsquare 10 - trr Diode recovery charge - 129 μs 161 ns - 11 14 A - 700 1046 nC - 208 257 ns - 17 21 A - 1768 2698 nC Revision: 11-Jun-15 Document Number: 93100 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT100NA120UX www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg -40 - 150 °C Junction and storage temperature range IGBT - - 0.27 - - 0.37 - 0.05 - Weight - 30 - g Mounting torque - - 1.3 Nm Junction to case RthJC Diode Case to heatsink RthCS Flat, greased surface SOT-227 300 160 140 250 TJ = 25 °C 120 200 100 IC (A) Allowable Case Temperature (°C) Case style °C/W 80 60 TJ = 125 °C 150 100 40 50 20 0 0 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 IC - Continuous Collector Current (A) VCE (V) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature Fig. 3 - Typical IGBT Collector Current Characteristics 0.1 1000 TJ = 125 °C 100 ICES (mA) 0.01 IC (A) 10 1 0.001 TJ = 25 °C 0.1 0.01 1 10 100 1000 10 000 0.0001 100 300 500 700 900 1100 VCE (V) VCES (V) Fig. 2 - IGBT Reverse Bias SOA TJ = 150 °C, VGE = 15 V Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current Revision: 11-Jun-15 Document Number: 93100 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT100NA120UX www.vishay.com Vishay Semiconductors 6.5 300 TJ = 25 °C 6.0 250 IF (A) Vgeth (V) TJ = 25 °C 200 5.5 5.0 4.5 150 TJ = 125 °C 100 TJ = 125 °C 50 4.0 0 3.5 0.0002 0.0004 0.0006 0.0008 0.001 0 1 2 3 4 5 6 7 IC (mA) VFM (V) Fig. 5 - Typical IGBT Threshold Voltage Fig. 8 - Typical Diode Forward Characteristics 3.0 25 100 A 20 Energy (mJ) VCE (V) 2.5 50 A 2.0 1.5 27 A Eon 10 Eoff 5 1.0 0 10 30 50 70 90 110 130 150 10 20 30 40 50 60 70 80 90 TJ (°C) IC (A) Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V Fig. 9 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V 100 1000 160 140 tf Switching Time (ns) Allowable Case Temperature (°C) 15 120 100 80 60 40 td(off) td(on) 100 tr 20 0 10 0 20 40 60 80 100 0 20 40 60 80 100 120 IF - Continuous Forward Current (A) IC (A) Fig. 7 - Maximum DC Forward Current vs. Case Temperature Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V Revision: 11-Jun-15 Document Number: 93100 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT100NA120UX www.vishay.com Vishay Semiconductors 40 250 230 35 Eon 190 25 trr (ns) Energy (mJ) TJ = 125 °C 210 30 20 170 150 TJ = 25 °C 130 15 110 Eoff 10 90 0 0 10 20 30 40 70 100 50 1000 Rg (Ω) dIF/dt (A/µs) Fig. 11 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, IC = 100 A, L = 500 μH, VCC = 600 V, VGE = 15 V Fig. 13 - Typical trr Diode vs. dIF/dt VR = 200 V, IF = 50 A 1000 40 td(on) 35 Switching Time (ns) tr 30 tf TJ = 125 °C Irr (A) 25 20 15 td(off) TJ = 25 °C 10 5 100 0 10 20 30 40 0 100 50 1000 Rg (Ω) dIF/dt (A/µs) Fig. 12 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, L = 500 μH, VCC = 600 V, IC = 100 A, VGE = 15 V Fig. 14 - Typical Irr Diode vs. dIF/dt VR = 200 V, IF = 50 A 2650 2400 2150 TJ = 125 °C Qrr (nC) 1900 1650 1400 1150 900 TJ = 25 °C 650 400 100 1000 dIF/dt (A/µs) Fig. 15 - Typical Qrr Diode vs. dIF/dt VR = 200 V, IF = 50 A Revision: 11-Jun-15 Document Number: 93100 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT100NA120UX www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 DC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 DC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode) Revision: 11-Jun-15 Document Number: 93100 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT100NA120UX www.vishay.com Vishay Semiconductors R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 18a - Clamped Inductive Load Test Circuit Fig. 18b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V + VCC D.U.T./ driver Rg Fig. 19a - Switching Loss Test Circuit 1 2 90 % 10 % 3 VC 90 % td(off) 10 % IC 5% tf tr td(on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig. 19b - Switching Loss Waveforms Test Circuit Revision: 11-Jun-15 Document Number: 93100 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT100NA120UX www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G T 100 N A 120 U X 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - T = Trench IGBT 4 - Current rating (100 = 100 A) 5 - Circuit configuration (N = High side chopper) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (120 = 1200 V) 8 - Speed/type (U = Ultrafast IGBT) 9 - Diode (X = HEXFRED®) CIRCUIT CONFIGURATION 3 2 1 4 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95036 Packaging information www.vishay.com/doc?95037 Revision: 11-Jun-15 Document Number: 93100 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45° 4 x M4 nuts Ø 4.40 (0.173) Ø 4.20 (0.165) -A3 4 6.25 (0.246) 12.50 (0.492) 25.70 (1.012) 25.20 (0.992) -B- 1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C- 12.30 (0.484) 11.80 (0.464) 0.12 (0.005) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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