VS-MURD620CTTRLPBF

VS-MURD620CTPbF Vishay Semiconductors Ultrafast Rectifier, 2 x 3 A FRED Pt® FEATURES Base common cathode 4 • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature 2 Common cathode 1 3 Anode Anode D-PAK (TO-252AA) • Compliant to RoHS Directive 2002/95/EC • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DESCRIPTION/APPLICATIONS VS-MURD620CTPbF is the state of the art ultrafast recovery rectifier specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. PRODUCT SUMMARY Package D-PAK (TO-252AA) IF(AV) 2x3A VR 200 V VF at IF 1.0 V trr typ. See Recovery table TJ max. 175 °C Diode variation Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage VRRM Average rectified forward current per device IF(AV) Non-repetitive peak surge current IFSM Peak repetitive forward current per diode IFM Operating junction and storage temperatures TEST CONDITIONS Total device, rated VR, TC = 146 °C MAX. UNITS 200 V 6 50 Rated VR, square wave, 20 kHz, TC = 146 °C A 6 TJ, TStg - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 3 A - - 1.0 IF = 3 A, TJ = 125 °C - - 0.96 IF = 6 A - - 1.2 IR = 100 μA IF = 6 A, TJ = 125 °C - - 1.13 VR = VR rated - - 5 TJ = 125 °C, VR = VR rated - - 250 UNITS V μA Reverse leakage current IR Junction capacitance CT VR = 200 V - 12 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH Document Number: 94084 Revision: 13-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VS-MURD620CTPbF Vishay Semiconductors Ultrafast Rectifier, 2 x 3 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35 IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A - - 25 TJ = 25 °C - 19 - - 26 - TJ = 125 °C Peak recovery current IRRM TJ = 25 °C TJ = 125 °C IF = 3 A dIF/dt = 200 A/μs VR = 160 V - 3.1 - - 4.6 - UNITS ns A TJ = 25 °C - 30 - TJ = 125 °C - 60 - MIN. TYP. MAX. UNITS TJ, TStg - 65 - 175 °C Thermal resistance, junction to case per leg RthJC - - 9.0 Thermal resistance, junction to ambient per leg RthJA - - 80 Thermal resistance, case to heatsink RthCS - - - - 0.3 - - 0.01 - oz. - 12 (10) kgf · cm (lbf · in) Reverse recovery charge Qrr nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Mounting surface, flat, smooth and greased Weight 6.0 (5.0) Mounting torque Marking device www.vishay.com 2 Case style D-PAK °C/W g MURD620CT For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94084 Revision: 13-Jan-11 VS-MURD620CTPbF 100 Vishay Semiconductors 100 10 TJ = 175 °C TJ = 150 °C TJ = 25 °C 1 TJ = 175 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Ultrafast Rectifier, 2 x 3 A FRED Pt® 10 TJ = 150 °C TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 25 °C 0.01 0.001 0.1 0 0.4 0.2 0.6 0.8 1.2 1.0 1.4 50 0 1.6 100 200 150 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 1 10 100 1000 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 . 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94084 Revision: 13-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VS-MURD620CTPbF Ultrafast Rectifier, 2 x 3 A FRED Pt® Vishay Semiconductors 50 40 IF = 3 A IF = 6 A 160 DC 150 Square wave (D = 0.50) Rated VR applied 140 30 20 130 See note (1) 10 100 120 0 1 2 3 4 5 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 140 4.5 4.0 120 3.5 VR = 30 V TJ = 125 °C TJ = 25 °C 100 3.0 RMS limit 2.5 Qrr (nC) Average Power Loss (W) VR = 30 V TJ = 125 °C TJ = 25 °C 170 trr (ns) Allowable Case Temperature (°C) 180 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 2.0 1.5 1.0 DC 0.5 1 2 3 4 80 60 40 20 0 0 IF = 6 A IF = 3 A 5 0 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94084 Revision: 13-Jan-11 VS-MURD620CTPbF Ultrafast Rectifier, 2 x 3 A FRED Pt® Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94084 Revision: 13-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VS-MURD620CTPbF Ultrafast Rectifier, 2 x 3 A FRED Pt® Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MUR 1 2 D 6 20 CT 3 4 5 6 1 - Vishay Semiconductors product 2 - Ultrafast MUR series 3 - D = D-PAK 4 - Current rating (6 = 6 A) 5 - Voltage rating (20 = 200 V) 6 - CT = Center tap (dual) 7 - Tape and reel suffix 8 - PbF = Lead (Pb)-free TRL PbF 7 8 TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95016 Part marking information www.vishay.com/doc?95059 Packaging information www.vishay.com/doc?95033 www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94084 Revision: 13-Jan-11 Outline Dimensions Vishay High Power Products D-PAK (TO-252AA) DIMENSIONS in millimeters and inches (5) A E b3 Pad layout C A (3) 0.010 M C A B c2 A L3 (3) Ø1 4 Ø2 4 B Seating plane H D (5) 1 2 0.245 MIN. (6.23) D1 L4 3 3 (2) L5 2 b 1 A c b2 0.06 MIN. (1.524) 0.010 M C A B 2x e 0.093 (2.38) 0.085 (2.18) (L1) Detail “C” Rotated 90 °CW Scale: 20:1 H (7) Lead tip C Gauge plane L2 MILLIMETERS MIN. 0.488 (12.40) 0.409 (10.40) 0.089 MIN. (2.28) Detail “C” SYMBOL 0.265 MIN. (6.74) E1 INCHES MAX. MIN. MAX. C Seating plane C Ø L NOTES A1 SYMBOL MILLIMETERS MIN. MAX. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 L1 3 2.29 BSC INCHES MIN. 2.74 BSC L2 0.51 BSC NOTES 0.090 BSC 0.108 REF. b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.020 BSC 0.050 c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040 D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10° E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15° E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35° 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b1 and c1 applied to base metal only (7) Datum A and B to be determined at datum plane H (8) Outline conforms to JEDEC outline TO-252AA Document Number: 95016 Revision: 04-Nov-08 For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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