VS-ST700C12L1

VS-ST700CL Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 910 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case B-PUK (TO-200AC) • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • DC motor controls B-PUK (TO-200AC) • Controlled DC power supplies PRIMARY CHARACTERISTICS IT(AV) 910 A VDRM/VRRM 1200 V, 1600 V, 1800 V, 2000 V VTM 1.80 V IGT 100 mA TJ -40 °C to +125 °C Package B-PUK (TO-200AC) Circuit configuration Single SCR • AC controllers         MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t VALUES UNITS 910 A 55 °C 1857 A 25 °C 50 Hz 15 700 60 Hz 16 400 50 Hz 1232 60 Hz 1125 VDRM/VRRM 1200 to 2000 tq Typical TJ A kA2s V 150 μs -40 to 125 °C IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA VOLTAGE RATINGS TYPE NUMBER VS-ST700CL VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 80 Revision: 27-Sep-17 Document Number: 94413 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST700CL Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current  at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VALUES A 55 (85) °C 1857 No voltage reapplied 15 700 100 % VRRM  reapplied 13 200 No voltage reapplied 16 400 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 0.1 to 10 ms, no voltage reapplied 1232 1125 871 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 1.00 High level value of threshold voltage VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 1.13 Low level value of on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.40 High level value of on-state slope resistance rt2 (I >  x IT(AV)), TJ = TJ maximum 0.35 Ipk = 2000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.80 VTM IH Typical latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 795 12 321 VT(TO)1 Maximum holding current A 13 800 Low level value of threshold voltage Maximum on-state voltage UNITS 910 (355) 600 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise  of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr  1 μs TJ = TJ maximum, anode voltage  80 % VDRM VALUES UNITS 1000 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs,  VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 150 SYMBOL TEST CONDITIONS VALUES UNITS μs BLOCKING PARAMETER Maximum critical rate of rise of  off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs Maximum peak reverse and  off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 80 mA Revision: 27-Sep-17 Document Number: 94413 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST700CL Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM VALUES TEST CONDITIONS Typ. TJ = TJ maximum, tp  5 ms 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp  5 ms 3.0 TJ = TJ maximum, tp  5 ms IGT TJ = 25 °C TJ = -40 °C DC gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C DC gate current not to trigger IGD DC gate voltage not to trigger VGD TJ = TJ maximum A V 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 125 °C Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 20 TJ = -40 °C DC gate current required to trigger Max. 200 - 100 200 50 - 2.5 - 1.8 3.0 1.1 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ -40 to 125 TStg -40 to 150 RthJ-hs RthC-hs DC operation single side cooled 0.073 DC operation double side cooled 0.031 DC operation single side cooled 0.011 DC operation double side cooled K/W 0.006 Mounting force, ± 10 % Approximate weight Case style °C See dimensions - link at the end of datasheet 14 700 (1500) N (kg) 255 g B-PUK (TO-200AC) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION SINGLE SIDE DOUBLE SIDE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE 180° 0.009 0.009 0.006 0.006 120° 0.011 0.011 0.011 0.011 90° 0.014 0.014 0.015 0.015 60° 0.020 0.020 0.021 0.021 30° 0.036 0.036 0.036 0.036 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 27-Sep-17 Document Number: 94413 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST700CL Series 130 Vishay Semiconductors ST700C..L Series (Single Side Cooled) RthJ-hs(DC) = 0.073 K/ W 120 110 100 90 Conduction Angle 80 70 30° 60° 90° 60 120° 180° 50 40 0 100 200 300 400 500 600 700 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) www.vishay.com 130 ST700C..L Series (Double Side Cooled) RthJ-hs(DC) = 0.031 K/ W 120 110 100 90 Conduction Period 80 70 30° 60 90° 120° 40 180° 30 DC 20 0 100 90 Conduction Period 80 70 60 50 30° 40 60° 90° 30 120° 180° 20 0 200 400 600 DC 800 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (°C) ST700C..L Series (Single Side Cooled ) RthJ-hs(DC) = 0.073 K/ W 110 90 Conduction Period 70 30° 60 60° 90° 50 120° 40 180° 30 DC 20 0 400 800 1200 1600 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics 2000 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (°C) 2000 RMSLimit 1600 1200 Conduction Angle 800 ST700C..L Series TJ = 125°C 400 0 0 200 400 600 800 1000 1200 Fig. 5 - On-State Power Loss Characteristics 100 80 2000 Average On-state Current (A) ST700C..L Series (Double Side Cooled) RthJ-hs(DC) = 0.031 K/ W 110 1600 180° 120° 90° 60° 30° 2400 1000 Fig. 2 - Current Ratings Characteristics 120 1200 2800 Average On-state Current (A) 130 800 Fig. 4 - Current Ratings Characteristics Fig. 1 - Current Ratings Characteristics 120 400 Average On-state Current (A) Average On-state Current (A) 130 60° 50 3500 DC 180° 120° 90° 60° 30° 3000 2500 2000 RMSLimit 1500 Conduction Period 1000 ST700C..L Series TJ = 125°C 500 0 0 400 800 1200 1600 2000 Average On-state Current (A) Fig. 6 - On-State Power Loss Characteristics Revision: 27-Sep-17 Document Number: 94413 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST700CL Series 14000 Vishay Semiconductors Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 13000 12000 11000 10000 9000 8000 7000 ST700C..L Series 6000 1 10 16000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduc tion May Not Be Maintained. 14000 Initial TJ = 125°C No Voltage Reapplied 13000 Rated VRRM Reapplied 12000 15000 11000 10000 9000 8000 7000 ST700C..L Series 6000 0.01 100 Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N) 0.1 1 Pulse Train Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 10000 TJ = 25°C TJ = 125°C 1000 ST700C..L Series 100 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJ-hs (K/ W) Fig. 9 - On-State Voltage Drop Characteristics 0.1 ST700C..L Series 0.01 Steady Sta te Value R thJ-hs = 0.073 K/ W (Single Side Cooled) RthJ-hs = 0.031 K/ W (Double Side Cooled) (DC Operation) 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 27-Sep-17 Document Number: 94413 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST700CL Series www.vishay.com Vishay Semiconductors Rectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr