2SC6040

2SC6040 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6040 High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • • High-speed switching: tf = 0.2 µs (max) (IC = 0.3 A) High breakdown voltage: VCES = 800 V, VCEO = 410 V Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C DC Pulse Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Rating 800 800 410 8 1.0 2.0 0.5 1.0 150 −55 to 150 Unit V V V V A A W °C °C 1. Base 2. Collector 3. Emitter JEDEC JEITA TOSHIBA Weight: ― ― 2-7D101A 0.2 g (typ.) 1 2004-12-01 2SC6040 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) DC current gain hFE (2) hFE (3) Collector emitter saturation voltage Base-emitter saturation voltage VCE (sat) VBE (sat) tr IB1 Test Condition VCB = 800 V, IE = 0 VEB = 8 V, IC = 0 IC = 1 mA, IB = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.1 A VCE = 5 V, IC = 0.2 A IC = 0.8 A, IB = 0.1 A IC = 0.8 A, IB = 0.1 A 20 µs VCC ≈ 200 V IB1 IB21 IC 667 Ω Min ― ― 800 410 50 60 50 ― ― Typ. ― ― ― ― ― ― ― ― ― Max 100 100 ― ― ― 120 ― 1.0 1.3 V V Unit µA µA V V Rise time ― ― 0.5 IB2 Switching time Storage time tstg INPUT Fall time tf OUTPUT ― ― 4.0 µs IB1 = 0.1 A, −IB2 = 50 mA DUTY CYCLE ≤ 1% ― ― 0.2 Marking C6040 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-12-01 2SC6040 IC – VCE 2.0 Common emitter Ta=25℃ Pulse test 2.0 200 IC – VCE 200 150 Collector current IC (A) 1.6 Collector current IC (A) 150 100 80 60 1.6 100 80 1.2 1.2 60 40 0.8 40 20 0.8 20 IB = 10 mA 0.4 IB = 10 mA 0 0 0.4 Common emitter Ta=25℃ Pulse test 2 4 6 8 10 12 0.4 0.8 1.2 1.6 2.0 2.4 0 0 Collector−emitter voltage VCE (V) Collector−emitter voltage VCE (V) hFE – IC 1000 VCE (sat) – IC 10 100 Ta = 100°C Collector−emitter saturation voltage VCE (sat) (V) Common emitter VCE = 5 V Pulse test Common emitter β= 8 Pulse test DC current gain hFE 1 25 10 −25 25 −25 0.1 Ta = 100°C 1 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) VBE (sat) – IC 10 IC – VBE 2.0 Common emitter VCE = 5 V Pulse test Base−emitter saturation voltage VBE (sat) (V) Collector current IC (A) Common emitter β =8 Pulse test 1.6 1 Ta = −25°C 1.2 100 25 0.8 Ta = 100°C −25 0.4 25 0.1 0.001 0.01 0.1 1 10 0 0 0.4 0.8 1.2 1.6 Collector current IC (A) Base-emitter voltage VBE (V) 3 2004-12-01 2SC6040 rth – tw 1000 (°C/W) Transient thermal resistance rth 100 10 1 Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25°C 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area 10 1.2 PC – Ta Collector power dissipation PC (W) IC max (Pulse)* 100 ms* 10 ms* 1 ms* 1.0 100 µs* 10 µs* 1 0.8 (A) 0.6 Collector current IC 0.4 0.1 0.2 DC operation Ta = 25°C 0.01 0 0 40 80 120 160 200 *:Single nonrepetitive pulse Ta = 25°C Curves linearly must with be derated in VCEO max 10 100 1000 increase Ambient temperature Ta (°C) temperature. 0.001 1 Collector−emitter voltage VCE (V) 4 2004-12-01 2SC6040 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-12-01