2SJ610

2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV) 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.85 Ω (typ.) High forward transfer admittance: |Yfs| = 18 S (typ.) Low leakage current: IDSS = −100 μA (VDS = −250 V) Enhancement mode: Vth = −1.5~−3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating −250 −250 ±20 −2.0 −4.0 20 180 −2.0 2.0 150 −55~150 A Unit V V V Pulse (t = 1 ms) (Note 1) JEDEC W mJ A mJ °C °C ― SC-64 2-7B1B Drain power dissipation Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEITA TOSHIBA Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit °C/W °C/W JEDEC JEITA TOSHIBA ― ― 2-7J1B Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −50 V, Tch = 25°C (initial), L = 75 mH, IAR = −2.0 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Weight: 0.36 g (typ.) 1 2006-11-16 2SJ610 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = −250 V, VGS = 0 V ID = −10 mA, VGS = 0 V VDS = −10 V, ID = −1 mA VGS = −10 V, ID = −1.0 A VDS = −10 V, ID = −1.0 A Min ⎯ ⎯ −250 −1.5 ⎯ 0.5 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 1.85 1.8 381 52 157 5 Max ±10 −100 ⎯ −3.5 2.55 ⎯ ⎯ ⎯ pF Unit μA μA V V Ω S ⎯ 10 V ID = 1.0 A VOUT ⎯ ⎯ ⎯ ns ⎯ ⎯ Turn-on time Switching time Fall time ton VGS 0V 20 50 Ω RL = 100 Ω ⎯ VDD ∼ 100 V − ⎯ ⎯ ⎯ ⎯ 36 24 11 13 6 tf ⎯ ⎯ ⎯ ⎯ ⎯ nC Turn-off time Total gate charge Gate-source charge Gate-drain charge toff Qg Qgs Qgd Duty < 1%, tw = 10 μs = VDD ∼ −200 V, VGS = −10 V, − ID = −2.0 A Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = −2.0 A, VGS = 0 V IDR = −2.0 A, VGS = 0 V, dIDR/dt = 100 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 120 540 Max −2.0 −4.0 2.0 ⎯ ⎯ Unit A A V ns nC Marking J610 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-16 2SJ610 ID – VDS −2 Common source Tc = 25°C, pulse test −8 −6 −10 −15 −5.5 −5 −4.5 −4 Common source Tc = 25°C, pulse test −15 ID – VDS −6 −8 −10 −5 −5.5 Drain current ID (A) Drain current ID (A) −1.5 −3 −1 −2 −4.5 −1 VGS = −4 V −0.5 VGS = −4 V 0 0 −1 −2 −3 −4 0 0 −5 −10 −15 −20 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS −4 Common source VDS = −10 V Pulse test −10 VDS – VGS Common source Tc = 25°C Pulse test VDS (V) Drain-source voltage Drain current ID (A) −3 −8 −6 −2 −2 −4 −1 25 −2 I D = −1 A 100 0 0 −1 −2 −3 −4 Tc = −55°C −5 −6 0 0 −2 −4 −6 −8 −10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID 10 Common source VDS = −10 V 5 Pulse test 3 Tc = −55°C 10 Common source Tc = 25°C 5 VGS = 10 V Pulse test 3 RDS (ON) − ID Forward transfer admittance ⎪Yfs⎪ (S) 25 1 100 Drain-source ON-resistance RDS (ON) (Ω) −3 −5 −10 1 0.5 0.3 0.5 0.3 0.1 −0.1 −0.3 −0.5 −1 0.1 −0.01 −0.03 −0.1 −0.3 −1 −3 −10 Drain current ID (A) Drain current ID (A) 3 2006-11-16 2SJ610 RDS (ON) – Tc (Ω) 5 Common source VGS = −10 V Pulse test −2 A 3 −100 Common source Tc = 25°C Pulse test IDR – VDS Drain-source ON-resistance RDS (ON) 4 Drain reverse current IDR (A) −10 I D = −1 A −1 2 1 VGS = −10 V −5 V −3 V 0.4 0.6 0, 1 0.8 1.0 1.2 1.4 0 −80 −40 0 40 80 120 160 0.1 0 0.2 Case temperature Tc (°C) Drain-source voltage VDS (V) Capacitance – VDS 1000 Ciss −5 Vth – Tc Common source VDS = −10 V ID = −1 mA Pulse test Vth (V) Gate threshold voltage −4 (pF) Coss 100 Crss Capacitance C −3 −2 10 −1 1 −0.1 Common source VGS = 0 V f = 1 MHz Tc = 25°C −0.3 −1 −3 −10 −30 −100 0 −80 −40 0 40 80 120 160 Case temperature Tc (°C) Drain-source voltage VDS (V) PD – Tc 40 −300 Dynamic input/output characteristics −30 Common source I D = −2 A Tc = 25°C −200 VDS Pulse test −20 Drain power dissipation PD (W) VDS (V) 30 Drain-source voltage 20 −15 −50 −100 −100 −5 VGS VDD = −200 V −10 10 0 0 40 80 120 160 200 0 0 5 15 25 35 −0 Case temperature Tc (°C) Total gate charge Qg (nC) 4 2006-11-16 Gate-source voltage VGS (V) −25 2SJ610 rth – tw 3 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 0.003 0.001 10 μ Duty = 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse PDM t T Duty = t/T Rth (ch-c) = 6.25°C/W 100 μ 1m 10 m 100 m 1 10 100 Pulse width tw (S) Safe operating area −100 −50 −30 200 EAS – Tch Avalanche energy EAS (mJ) 160 −10 −5 −3 ID max (pulsed) * 1 ms * DC 100 μs * 120 (A) 80 Drain current ID −1 −0.5 −0.3 40 0 25 50 75 100 125 150 −0.1 −0.0 * Single nonrepetitive pulse Tc = 25°C −0.0 Curves must be derated linearly with increase in temperature. −0.0 1 VDSS max 3 5 10 30 50 100 300 500 1000 Channel temperature (initial) Tch (°C) 15 V −15 V BVDSS IAR VDD VDS Waveform Drain-source voltage VDS (V) Test circuit RG = 25 Ω VDD = −50 V, L = 75 mH 5 2006-11-16 2SJ610 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-16