2SK3388(TE24L,Q)

2SK3388 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3388 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 82 mΩ (typ.) • High forward transfer admittance: |Yfs| = 20 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 250 V) • Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 250 V Drain-gate voltage (RGS = 20 kΩ) VDGR 250 V Gate-source voltage VGSS ±20 V (Note 1) ID 20 Pulse (Note 1) IDP 60 Drain power dissipation (Tc = 25°C) PD 125 W Single pulse avalanche energy (Note 2) EAS 487 mJ Avalanche current IAR 20 A Repetitive avalanche energy (Note 3) EAR 12.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C DC Drain current A JEDEC ― JEITA SC-97 TOSHIBA 2-9F1B Weight: 0.74 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Circuit Configuration Symbol Max Unit Notice: Rth (ch-c) 1.00 °C/W Please use the S1 pin for gate input signal return. Make sure that the main current flows into the S2 pin. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 2.06 mH, IAR = 20 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature 4 This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2 3 1 2009-09-29 2SK3388 Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Part No. (or abbreviation code) Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K3388 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Lot No. Note 4 Electrical Characteristics (Note 5) (Ta = 25°C) Characteristics Gate leakage current Symbol IGSS Test Condition VGS = ±16 V, VDS = 0 V Typ. Max Unit ⎯ ⎯ ±10 μA ⎯ ⎯ 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 250 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 1.5 ⎯ 3.5 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 10 A ⎯ 82 105 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 10 A 10 20 ⎯ S ⎯ 4000 ⎯ ⎯ 300 ⎯ ⎯ 1000 ⎯ ⎯ 7 ⎯ ⎯ 20 ⎯ ⎯ 25 ⎯ ⎯ 145 ⎯ ⎯ 100 ⎯ ⎯ 70 ⎯ ⎯ 30 ⎯ IDSS Drain-source breakdown voltage Gate threshold voltage Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time Turn-on time tr VDS = 10 V, VGS = 0 V, f = 1 MHz VGS ton Turn-off time tf toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd 0V 4.7 Ω Switching time Fall time ID = 10 A 10 V RL = 12.5Ω Drain cut-off current VDS = 250 V, VGS = 0 V Min VOUT VDD ∼ − 125 V Duty < = 1%, tw = 10 μs VDD ∼ − 200 V, VGS = 10 V, ID = 20 A pF ns nC Note 5: Connect the S1 and S2 pins together, and ground them except during switching time measurement. Source-Drain Ratings and Characteristics (Note 6) (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1, Note 6) IDR1 ⎯ ⎯ ⎯ 20 A Pulse drain reverse current (Note 1, Note 6) IDRP1 ⎯ ⎯ ⎯ 60 A Continuous drain reverse current (Note 1, Note 6) IDR2 ⎯ ⎯ ⎯ 1 A Pulse drain reverse current (Note 1, Note 6) IDRP2 ⎯ ⎯ ⎯ 4 A Forward voltage (diode) VDS2F IDR1 = 20 A, VGS = 0 V ⎯ ⎯ −2.0 V Reverse recovery time trr 300 ⎯ ns Qrr IDR = 20 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ Reverse recovery charge ⎯ 3.3 ⎯ μC Note 6: IDR1, IDRP1:Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open. IDR2, IDRP2:Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open. Unless otherwise specified, connect the S1 and S2 pins together, and ground them. 2 2009-09-29 2SK3388 ID – VDS 20 ID – VDS 100 10 4.5 6 80 Common source Tc = 25°C Pulse test 12 Drain current ID (A) Drain current ID (A) 16 4 8 3.8 4 1 2 3 Drain-source voltage 4 Tc = 25°C 10 Pulse test 6 60 5 40 4.5 VGS = 4 V 0 0 5 VDS (V) 4 8 12 Drain-source voltage ID – VGS 16 VDS (V) 4 Common source Common source VDS (V) VDS = 10 V Pulse test 30 20 Drain-source voltage Drain current ID (A) 20 VDS – VGS 50 40 5.5 20 VGS = 3.5 V 0 0 8 Common source 4.2 Tc = −55°C 100 10 25 Tc = 25°C Pulse test 3 2 ID = 20 A 1 10 5 0 0 2 4 6 Gate-source voltage 8 0 0 10 VGS (V) 5 10 Gate-source voltage ⎪Yfs⎪ – ID VDS = 10 V Pulse test Common source Tc = −55°C Tc = 25°C 25 Pulse test Drain-source on resistance RDS (ON) (mΩ) (S) VGS (V) 1000 Common source Forward transfer admittance ⎪Yfs⎪ 20 RDS (ON) – ID 100 100 10 1 1 15 10 100 10 1 100 Drain current ID (A) VGS = 10, 15 V 10 100 Drain current ID (A) 3 2009-09-29 2SK3388 IDR – VDS 100 Common source Pulse test 5 ID = 20 A 120 80 40 0 −80 −40 0 40 80 Common source Tc = 25°C VGS = 10 V (A) 160 10 Drain reverse current IDR Drain-source on resistance RDS (ON) (mΩ) RDS (ON) – Tc 200 120 Pulse test 10 VGS = 10 V 5 1 1 0 0.1 0 160 3 −0.2 Case temperature Tc (°C) −0.4 −0.6 Capacitance – VDS −1.2 −1.4 −1.6 VDS (V) Vth – Tc 4 Common source Vth (V) Ciss 1000 Gate threshold voltage (pF) −1 Drain-source voltage 10000 Capacitance C −0.8 Coss 100 Crss Common source VGS = 0 V VDS = 10 V ID = 1 mA 3 Pulse test 2 1 f = 1 MHz 0 −80 Tc = 25°C 10 0.1 1 10 Drain-source voltage −40 0 40 80 120 160 Case temperature Tc (°C) 100 VDS (V) PD – Tc Dynamic input/output characteristics 200 20 500 120 80 40 10 0 40 80 120 160 VDD = 50 V Case temperature Tc (°C) 12 300 VGS 200 100 200 VDS 8 4 100 0 0 200 16 40 80 120 160 VGS (V) ID = 20 A 400 Tc = 25°C Pulse test Gate-source voltage VDS (V) 160 Drain-source voltage Drain power dissipation PD (W) Common source 0 200 Total gate charge Qg (nC) 4 2009-09-29 2SK3388 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 PDM 0.1 0.1 t 0.05 0.02 0.01 T Duty = t/T Rth (ch-c) = 1.0°C/W Single pulse 0.01 0.00001 0.0001 0.001 0.01 Pulse width 0.1 tw 1 (s) Safe operating area EAS – Tch 100 500 ID max (pulsed) * Avalanche energy EAS (mJ) 100 μs* Drain current ID (A) 1 ms* ID max 10 (continuous) DC operation Tc = 25°C 1 10 * Single nonrepetitive pulse Tc = 25°C 400 300 200 100 Curves must be derated linearly with increase in temperature. 0.1 1 10 Drain-source voltage 0 25 VDSS max 100 50 75 100 125 150 Channel temperature (initial) Tch (°C) 1000 VDS (V) 15 V BVDSS IAR −15 V VDD Test circuit RG = 25 Ω VDD = 50 V, L = 2.06 mH 5 VDS Waveform Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − ⎝ VDSS VDD ⎠ 2009-09-29 2SK3388 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29