4N35(SHORT,F)

4N35,4N36,4N37(Short) TOSHIBA Photocoupler GaAs IRed & Photo−Transistor 4N35(Short), 4N36(Short), 4N37(Short) AC Line / Digital Logic Isolator. Digital Logic / Digital Logic Isolator. Telephone Line Receiver. High Frequency Power Supply Feedback Control. Relay Contact Monitor. Unit in mm The TOSHIBA 4N35 (short) through 4N37 (short) consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in−line package. · Switching speeds: 3µs (typ.) · DC current transfer ratio: 100% (min.) · Isolation resistance: 1011Ω (min.) · Isolation voltage: 2500Vrms (min.) · UL recognized: UL1577, file no. E67349 TOSHIBA 11−7A8 Weight: 0.4 g Pin Configurations(top view) 1 2002-09-25 4N35,4N36,4N37(Short) Maximum Ratings (Ta = 25°C) Characteristic Forward current (continuous) LED Forward current derating Peak forward current (Note 1) Power dissipation Unit IF 60 mA ∆IF/°C 0.8 (*) mA / °C IPF 3 A PD 100 mW 1.33 (*) mW / °C VR 6 V Collector-emitter voltage BVCEO 30 V Collector-base voltage BVCBO 70 V Emitter-collector voltage BVECO 7 V Collector current (continuous) IC 100 mA Power dissipation PC 300 mW ∆PC / °C 4.0 (*) mW / °C Storage temperature Tstg -55~150 °C Operating temperature Topr -55~100 °C Lead soldering temperature (at 10 s) Tsol 260 °C Total package power dissipation PT 300 mW Total package power dissipation derating ∆PT / °C 3.3 (*) mW / °C BVS 2500 Vrms Reverse voltage Detector Rating ∆PD / °C Power dissipation derating Power dissipation derating Coupled Symbol 4N35 Input to output isolation voltage (AC, 1 minute) 4N36 4N37 2500 / 3550 BVS (**) 1750 / 2500 Vrms / Vpk 1050 / 1500 (Note 1) Pulse width 1µs, 300pps (*) Above 25°C ambient. (**) JEDEC registered maximum BVS, however, TOSHIBA specifies a maxium BVS of 2500Vrms, 1 minute. 2 2002-09-25 4N35,4N36,4N37(Short) Electrical Characteristics (Ta = 25°C) Characteristic Symbol VF Detector LED Forward voltage Min. Typ. Max. IF = 10 mA 0.8 1.15 1.5 IF = 10 mA, Ta = -55°C 0.9 ― 1.7 IF = 10 mA, Ta = 100°C 0.7 ― 1.4 Unit V Reverse current IR VR = 6 V ― ― 10 µA Capacitance CD V = 0, f = 1 MHz ― 30 100 pF DC forward current gain hFE VCE = 5V, IC = 500 µA ― 200 ― ― Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA 30 ― ― V Collector-base breakdown voltage V (BR) CBO IC = 100 µA 70 ― ― V Emitter-collector breakdown voltage V (BR) ECO IE = 100 µA 7 ― ― V Collector dark current ICEO VCE = 10 V ― 1 50 nA Collector dark current ICEO VCE = 30 V, Ta = 100°C ― ― 500 µA Collector-emitter capacitance CCE V = 0, f = 1 MHz ― 10 ― pF IF = 10 mA, VCE = 10 V 100 ― ― IF = 10 mA, VCE = 10 V Ta = -55°C 40 ― ― IF = 10 mA, VCE = 10 V Ta = 100°C 40 ― ― IF = 10 mA, IC = 0.5 mA ― 0.1 0.3 V ― 0.8 2.5 pF 1011 ― ― Ω Vio = 3550 Vpk ― ― 100 Vio = 2500 Vpk ― ― 100 Vio = 1500 Vpk ― ― 100 VCC = 10 V, IC = 2 mA RL = 100Ω ― 3 10 ― 3 10 Current transfer ratio IC / IF Collector-emitter saturation voltage Coupled Test Condition VCE (sat) Capacitance input to output CS VS = 0, f = 1 MHz Isolation resistance RS VS = 500 V, R.H.≤ 60 % Input to output 4N35 isolation current 4N36 (pulse width = 8ms) 4N37 IIO Turn-on time tON Turn-off time tOFF 3 % µA µs 2002-09-25 4N35,4N36,4N37(Short) 4 2002-09-25 4N35,4N36,4N37(Short) 5 2002-09-25 4N35,4N36,4N37(Short) 6 2002-09-25 4N35,4N36,4N37(Short) RESTRICTIONS ON PRODUCT USE 000707EBC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 2002-09-25 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.