74HCT4051D

74HCT4051D,74HCT4052D CMOS Digital Integrated Circuits Silicon Monolithic 74HCT4051D,74HCT4052D 1. Functional Description 74HCT4051D:8-Channel Analog Multiplexer/Demultiplexer 74HCT4052D:Dual 4-Channel Analog Multiplexer/Demultiplexer 2. General The 74HCT4051D/74HCT4052D are high speed CMOS ANALOG MULTIPLEXER/DEMULTIPLEXER fabricated with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. This device may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS. This inputs are compatible with TTL, NMOS and CMOS output voltage levels. The 74HCT4051D has an 8 channel configuration and the 74HCT4052D has a 4 channel × 2 configuration. The digital signal to the control terminal turns "ON" the corresponding switch of each channel a large amplitude signal (VCC - VEE) can then be switched by the small logical amplitude (VCC - GND) control signal. For example, in the case of VCC = 5 V, GND = 0 V, VEE = -5 V, signals between -5 V and +5 V can be switched from the logical circuit with a single power supply of 5 V. As the ON-resistance of each switch is low, they can be connected to circuits with low input impedance. All inputs are equipped with protection circuits against static discharge or transient excess voltage. 3. Features (1) Wide operating temperature range: Topr = -40 to 125 � (Note 1) (2) Low power dissipation: ICC = 4.0 µA (max) (VCC = 5.5 V, VEE = GND, Ta = 25 �) (3) Compatible with TTL output: VIH = 2.0 V (min), VIL = 0.8 V (max) (4) Wide interfacing ability: LSTTL, NMOS, CMOS (5) Low ON-resistance: RON = 50 Ω (typ.) at VCC - VEE = 9 V (6) High degree of linearity: THD = 0.020 % (typ.) at VCC - VEE = 9 V Note 1: Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after July 2020. 4. Packaging SOIC16 Start of commercial production 2020-07 ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 2020-11-26 Rev.4.0 74HCT4051D,74HCT4052D 5. Pin Assignment 74HCT4051D 74HCT4052D 6. IEC Logic Symbol 74HCT4051D 74HCT4052D 7. Marking 74HCT4051D ©2016-2020 Toshiba Electronic Devices & Storage Corporation 74HCT4052D 2 2020-11-26 Rev.4.0 74HCT4051D,74HCT4052D 8. System Diagram 74HCT4051D 74HCT4052D ©2016-2020 Toshiba Electronic Devices & Storage Corporation 3 2020-11-26 Rev.4.0 74HCT4051D,74HCT4052D 9. Truth Table Input Inhibit Input C* Input B L L L L L L L L L H L H L H L H H X X: *: Input A ON Channel 74HCT4051D ON Channel 74HCT4052D L L 0 0X, 0Y L H 1 1X, 1Y H L 2 2X, 2Y H H 3 3X, 3Y L L 4 � L H 5 � H L 6 � H H 7 � X X None None Don't care Except 74HCT4052D 10. Absolute Maximum Ratings (Note) Characteristics Symbol Note Rating Unit Supply voltage VCC -0.5 to 7.0 V Supply voltage VEE -7.0 to 0 V Supply voltage VCC-VEE -0.5 to 13.0 V Input voltage VIN -0.5 to VCC + 0.5 V Switch I/O voltage VI/O VEE - 0.5 to VCC + 0.5 V Input diode current IIK ±20 mA II/OK ±20 mA IT ±25 mA I/O diode current Switch through current VCC/ground current ICC Power dissipation PD Storage temperature Tstg (Note 1) ±50 mA 500 mW -65 to 150 � Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: PD derates linearly with -8 mW/� above 85 �. 11. Operating Ranges (Note) Characteristics Supply voltage Symbol Note VCC Rating Unit 4.5 to 5.5 V Supply voltage VEE -6.0 to 0 V Supply voltage VCC-VEE 4.5 to 11.0 V Input voltage VIN 0 to VCC V Switch I/O voltage VI/O VEE to VCC V Operating temperature Topr Input rise and fall times tr,tf (Note 1) -40 to 125 � 0 to 50 µs Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. Note 1: Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after July 2020. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 4 2020-11-26 Rev.4.0 74HCT4051D,74HCT4052D 12. Electrical Characteristics 12.1. DC Characteristics (Unless otherwise specified, T a = 25 �) Characteristics High-level input voltage Symbol Test Condition VIH � Low-level input voltage VIL ON-resistance RON VEE (V) � VCC (V) Min Typ. Max Unit 4.5 to 5.5 2.0 � � V 4.5 to 5.5 � � 0.8 V VIN = VIH or VIL VI/O = VCC to VEE II/O ≤ 2 mA GND 4.5 � 180 240 Ω -4.5 4.5 � 140 190 -5.5 5.5 � 135 180 VIN = VIH or VIL VI/O = VEE II/O ≤ 2 mA GND 4.5 � 150 200 -4.5 4.5 � 135 170 -5.5 5.5 � 125 170 VIN = VIH or VIL VI/O = VCC II/O ≤ 2 mA GND 4.5 � 95 130 -4.5 4.5 � 75 100 -5.5 5.5 � 70 100 VIN = VIH or VIL VI/O = VCC to VEE II/O ≤ 2 mA GND 4.5 � 10 30 -4.5 4.5 � 5 12 -5.5 5.5 � 5 11 VOS = VCC or GND VIS = GND or VCC VIN = VIH or VIL GND 5.5 � � ±0.06 -5.5 5.5 � � ±0.1 Difference of ON-resistance between switches ∆RON Input/Output leakage current (Switch OFF) IOFF Input/Output leakage current (Switch ON) II/O VOS = VCC or GND VIN = VIH or VIL GND 5.5 � � ±0.06 -5.5 5.5 � � ±0.1 Control input leakage current IIN VIN = VCC or GND GND 5.5 � � ±0.1 µA Quiescent supply current ICC VIN = VCC or GND GND 5.5 � � 4.0 µA -5.5 5.5 � � 8.0 GND 5.5 � � 2.0 Per input: VIN = 0.5 V or 2.4 V Other input: VCC or GND ©2016-2020 Toshiba Electronic Devices & Storage Corporation 5 Ω µA µA mA 2020-11-26 Rev.4.0 74HCT4051D,74HCT4052D 12.2. DC Characteristics (Unless otherwise specified, T a = -40 to 85 �) Characteristics Symbol Test Condition High-level input voltage VIH Low-level input voltage VIL ON-resistance RON Difference of ON-resistance between switches ∆RON VEE (V) VCC (V) Min Max Unit � 4.5 to 5.5 � 4.5 to 5.5 2.0 � V � 0.8 V Ω VIN = VIH or VIL VI/O = VCC to VEE II/O ≤ 2 mA GND 4.5 � 300 -4.5 4.5 � 240 -5.5 5.5 � 225 VIN = VIH or VIL VI/O = VEE II/O ≤ 2 mA GND 4.5 � 250 -4.5 4.5 � 215 -5.5 5.5 � 215 VIN = VIH or VIL VI/O = VCC II/O ≤ 2 mA GND 4.5 � 165 -4.5 4.5 � 125 -5.5 5.5 � 125 VIN = VIH or VIL VI/O = VCC to VEE II/O ≤ 2 mA GND 4.5 � 35 -4.5 4.5 � 15 -5.5 5.5 � 14 VOS = VCC or GND VIS = GND or VCC VIN = VIH or VIL GND 5.5 � ±0.6 -5.5 5.5 � ±1.0 Ω Input/Output leakage current (Switch OFF) IOFF Input/Output leakage current (Switch ON) II/O VOS = VCC or GND VIN = VIH or VIL GND 5.5 � ±0.6 -5.5 5.5 � ±1.0 Control input leakage current IIN VIN = VCC or GND GND 5.5 � ±1.0 µA Quiescent supply current ICC VIN = VCC or GND GND 5.5 � 40.0 µA -5.5 5.5 � 80.0 GND 5.5 � 2.9 Per input: VIN = 0.5 V or 2.4 V Other input: VCC or GND ©2016-2020 Toshiba Electronic Devices & Storage Corporation 6 µA µA mA 2020-11-26 Rev.4.0 74HCT4051D,74HCT4052D 12.3. DC Characteristics (Note) (Unless otherwise specified, T a = -40 to 125 �) Characteristics Symbol Test Condition High-level input voltage VIH Low-level input voltage VIL ON-resistance RON Difference of ON-resistance between switches ∆RON VEE (V) VCC (V) Min Max Unit � 4.5 to 5.5 � 4.5 to 5.5 2.0 � V � 0.8 V Ω VIN = VIH or VIL VI/O = VCC to VEE II/O ≤ 2 mA GND 4.5 � 340 -4.5 4.5 � 275 -5.5 5.5 � 255 VIN = VIH or VIL VI/O = VEE II/O ≤ 2 mA GND 4.5 � 285 -4.5 4.5 � 245 -5.5 5.5 � 245 VIN = VIH or VIL VI/O = VCC II/O ≤ 2 mA GND 4.5 � 190 -4.5 4.5 � 145 -5.5 5.5 � 145 VIN = VIH or VIL VI/O = VCC to VEE II/O ≤ 2 mA GND 4.5 � 35 -4.5 4.5 � 15 -5.5 5.5 � 14 VOS = VCC or GND VIS = GND or VCC VIN = VIH or VIL GND 5.5 � ±3.0 -5.5 5.5 � ±5.0 Ω Input/Output leakage current (Switch OFF) IOFF Input/Output leakage current (Switch ON) II/O VOS = VCC or GND VIN = VIH or VIL GND 5.5 � ±3.0 -5.5 5.5 � ±5.0 Control input leakage current IIN VIN = VCC or GND GND 5.5 � ±1.0 µA Quiescent supply current ICC VIN = VCC or GND GND 5.5 � 80.0 µA -5.5 5.5 � 160.0 GND 5.5 � 2.9 Per input: VIN = 0.5 V or 2.4 V Other input: VCC or GND Note: µA µA mA Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after July 2020. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 7 2020-11-26 Rev.4.0 74HCT4051D,74HCT4052D 12.4. AC Characteristics (Unless otherwise specified, C L = 50 pF, T a = 25 �, Input: t r = t f = 6 ns) Characteristics Part Number Phase difference between input to output Output enable time Symbol φI/O 74HCT4051D 74HCT4051D Common terminal capacitance 74HCT4051D Switch terminal capacitance 74HCT4051D Feedthrough capacitance 74HCT4051D Power dissipation capacitance 74HCT4051D VCC (V) Min Typ. Max Unit GND 4.5 � 7 12 ns GND 5.5 � 6 10 -4.5 4.5 � 5 � GND 4.5 � 30 45 GND 5.5 � 26 35 -4.5 4.5 � 25 35 RL = 1 kΩ Figure 1 GND 4.5 � 30 45 GND 5.5 � 26 35 -4.5 4.5 � 25 35 tPLZ,tPHZ RL = 1 kΩ Figure 1 GND 4.5 � 22 30 GND 5.5 � 21 28 -4.5 4.5 � 21 28 GND 4.5 � 22 30 GND 5.5 � 21 28 -4.5 4.5 � 21 28 � � � 5 10 pF � 36 70 pF � 19 40 � 7 15 � 7 15 � 0.75 2 � 0.75 2 � 11 � � 19 � 74HCT4052D Control input capacitance � tPZL,tPZH RL = 1 kΩ Figure 1 74HCT4052D Output disable time Test Condition VEE (V) RL = 1 kΩ Figure 1 CIN � CIS Figure 2 -5.0 5.0 COS Figure 2 -5.0 5.0 CIOS Figure 2 -5.0 5.0 CPD Figure 2 (Note 1) GND 5.0 74HCT4052D 74HCT4052D 74HCT4052D 74HCT4052D ns ns ns ns pF pF pF Note 1: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation. ICC(opr) = CPD × VCC × fIN + ICC ©2016-2020 Toshiba Electronic Devices & Storage Corporation 8 2020-11-26 Rev.4.0 74HCT4051D,74HCT4052D 12.5. AC Characteristics (Unless otherwise specified, C L = 50 pF, T a = -40 to 85 �, Input: t r = t f = 6 ns) Characteristics Part Number Phase difference between input to output Output enable time 74HCT4051D Symbol Test Condition VEE (V) VCC (V) Min Max Unit φI/O � GND 4.5 � 15 ns GND 5.5 � 13 -4.5 4.5 � � GND 4.5 � 55 GND 5.5 � 42 -4.5 4.5 � 41 RL = 1 kΩ Figure 1 GND 4.5 � 55 GND 5.5 � 42 -4.5 4.5 � 41 tPLZ,tPHZ RL = 1 kΩ Figure 1 GND 4.5 � 37 GND 5.5 � 34 -4.5 4.5 � 34 GND 4.5 � 37 GND 5.5 � 34 -4.5 4.5 � 34 � � � 10 pF -5.0 5.0 � 70 pF � 40 � 15 � 15 � 2 � 2 tPZL,tPZH RL = 1 kΩ Figure 1 74HCT4052D Output disable time 74HCT4051D 74HCT4052D Control input capacitance Common terminal capacitance 74HCT4051D Switch terminal capacitance 74HCT4051D RL = 1 kΩ Figure 1 CIN � CIS Figure 2 74HCT4052D COS Figure 2 -5.0 5.0 74HCT4052D Feedthrough capacitance 74HCT4051D CIOS Figure 2 74HCT4052D ©2016-2020 Toshiba Electronic Devices & Storage Corporation 9 -5.0 5.0 ns ns ns ns pF pF 2020-11-26 Rev.4.0 74HCT4051D,74HCT4052D 12.6. AC Characteristics (Note) (Unless otherwise specified, CL = 50 pF, T a = -40 to 125 �, Input: t r = t f = 6 ns) Characteristics Part Number Phase difference between input to output Output enable time 74HCT4051D Symbol Test Condition VEE (V) VCC (V) Min Max Unit φI/O � GND 4.5 � 17 ns GND 5.0 � 15 -4.5 4.5 � � GND 4.5 � 62 GND 5.0 � 47 -4.5 4.5 � 45 RL = 1 kΩ Figure 1 GND 4.5 � 62 GND 5.0 � 47 -4.5 4.5 � 45 tPLZ,tPHZ RL = 1 kΩ Figure 1 GND 4.5 � 42 GND 5.0 � 38 -4.5 4.5 � 38 GND 4.5 � 42 GND 5.0 � 38 -4.5 4.5 � 38 � � � 10 pF -5.0 5.0 � 70 pF � 40 � 15 � 15 � 2 � 2 tPZL,tPZH RL = 1 kΩ Figure 1 74HCT4052D Output disable time 74HCT4051D 74HCT4052D Control input capacitance Common terminal capacitance 74HCT4051D Switch terminal capacitance 74HCT4051D RL = 1 kΩ Figure 1 CIN � CIS Figure 2 74HCT4052D COS Figure 2 -5.0 5.0 74HCT4052D Feedthrough capacitance 74HCT4051D CIOS Figure 2 74HCT4052D Note: -5.0 5.0 ns ns ns ns pF pF Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after July 2020. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 10 2020-11-26 Rev.4.0 74HCT4051D,74HCT4052D 12.7. Analog Switch Characteristics (T a = 25 �) (Note) Characteristics Part Number Symbol Sine Wave Distortion Maximum frequency response Feed through attenuation (switch OFF) Crosstalk (control input to signal output) Crosstalk (between any switches) THD Test Condition RL = 10 kΩ, CL = 50 pF fIN = 1 kHz fMAX(I/O) Adjust fIN voltage to obtain 0 dBm at VOS Increase fIN frequency until 74HCT4052D dB meter reads -3 dB RL = 50 Ω, CL = 10 pF fIN = 1 MHz, sine wave 74HCT4051D Figure 3 74HCT4052D 74HCT4051D FTH Xtalk Xtalk VEE (V) VCC (V) Typ. Unit % VIN = 8.0 Vp-p -4.5 4.5 0.020 VIN = 11.0 Vp-p -5.5 5.5 0.019 (Note 1) -4.5 4.5 190 (Note 2) MHz 70 110 (Note 1) -5.5 5.5 (Note 2) 200 80 135 VIN is centered at (VCC/2). Adjust input for 0 dBm. RL = 600 Ω, CL = 50 pF, fIN = 1 MHz, sine wave Figure 4 -4.5 4.5 -50 -5.5 5.5 -50 RL = 600 Ω, CL = 50 pF, fIN = 1 MHz, square wave (tr = tf = 6 ns) Figure 5 -4.5 4.5 140 -5.5 5.5 180 Adjust VIN to obtain 0 dBm at input. RL = 600 Ω, CL = 50 pF, fIN = 1 MHz, sine wave Figure 6 -4.5 4.5 -50 -5.5 5.5 -50 RL = 50 Ω, CL = 15 pF, fIN = 100 KHz, VSWITCH = 1 VRMS Figure 6 -4.5 4.5 -90 dB mV dB dB Note: These characteristics are determined by design of devices. Note 1: Input COMMON terminal, and measured at SWITCH terminal. Note 2: Input SWITCH terminal, and measured at COMMON terminal. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 11 2020-11-26 Rev.4.0 74HCT4051D,74HCT4052D 13. AC Test Circuit Figure 1 t PLZ , t PHZ , t PZL , t PZH Figure 2 C IOS , C IS , C OS Figure 3 Frequency Response Figure 4 Feedthrough Attenuation ©2016-2020 Toshiba Electronic Devices & Storage Corporation 12 2020-11-26 Rev.4.0 74HCT4051D,74HCT4052D Figure 5 Cross Talk (control input to output signal) Figure 6 Cross Talk (between any two switches) ©2016-2020 Toshiba Electronic Devices & Storage Corporation 13 2020-11-26 Rev.4.0 74HCT4051D,74HCT4052D Package Dimensions Unit: mm Weight: 0.15 g (typ.) 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