74HCT4053D
CMOS Digital Integrated Circuits
Silicon Monolithic
74HCT4053D
1. Functional Description
•
Triple 2-Channel Analog Multiplexer/Demultiplexer
2. General
The 74HCT4053D are high speed CMOS ANALOG MULTIPLEXER/DEMULTIPLEXER fabricated with silicon
gate C2MOS technology. They achieve the high speed operation similar to equivalent LSTTL while maintaining
the CMOS low power dissipation.
This device may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS. This inputs
are compatible with TTL, NMOS and CMOS output voltage levels.
The 74HCT4053D has a 2 channel × 3 configuration.
The digital signal to the control terminal turns "ON" the corresponding switch of each channel a large amplitude
signal (VCC - VEE) can then be switched by the small logical amplitude (VCC - GND) control signal.
For example, in the case of VCC = 5 V, GND = 0 V, VEE = -5 V, signals between -5 V and +5 V can be switched
from the logical circuit with a single power supply of 5 V. As the ON-resistance of each switch is low, they can be
connected to circuits with low input impedance.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3. Features
(1)
Wide operating temperature range: Topr = -40 to 125 � (Note 1)
(2)
Low power dissipation: ICC = 4.0 µA (max) (VCC = 5.5 V, VEE = GND, Ta = 25 �)
(3)
Compatible with TTL output: VIH = 2.0 V (min), VIL = 0.8 V (max)
(4)
Wide interfacing ability: LSTTL, NMOS, CMOS
(5)
Low ON-resistance: RON = 50 Ω (typ.) at VCC - VEE = 9 V
(6)
High degree of linearity: THD = 0.020 % (typ.) at VCC - VEE = 9 V
(7) Pin and function compatible with 4053B
Note 1: Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after
July 2020.
4. Packaging
SOIC16
Start of commercial production
2020-07
©2016-2020
Toshiba Electronic Devices & Storage Corporation
1
2020-11-17
Rev.2.0
74HCT4053D
5. Pin Assignment
6. IEC Logic Symbol
7. Marking
©2016-2020
Toshiba Electronic Devices & Storage Corporation
2
2020-11-17
Rev.2.0
74HCT4053D
8. System Diagram
9. Truth Table
X:
Input
Inhibit
Input
C
Input
B
Input
A
ON Channel
L
L
L
L
L
L
0X, 0Y, 0Z
L
H
1X, 0Y, 0Z
L
L
L
L
H
L
0X, 1Y, 0Z
H
H
1X, 1Y, 0Z
L
H
L
H
L
L
0X, 0Y, 1Z
L
H
1X, 0Y, 1Z
L
H
L
H
H
L
0X, 1Y, 1Z
H
H
1X, 1Y, 1Z
H
X
X
X
None
Don't care
©2016-2020
Toshiba Electronic Devices & Storage Corporation
3
2020-11-17
Rev.2.0
74HCT4053D
10. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Symbol
Note
Rating
Unit
VCC
-0.5 to 13.0
V
VCC-VEE
-0.5 to 13.0
Input voltage
VIN
-0.5 to VCC + 0.5
V
Switch I/O voltage
VI/O
VEE - 0.5 to VCC + 0.5
V
Input diode current
I/O diode current
Switch through current
VCC/ground current
IIK
±20
mA
II/OK
±20
mA
IT
±25
mA
ICC
±50
mA
500
mW
-65 to 150
�
Power dissipation
PD
Storage temperature
Tstg
(Note 1)
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: PD derates linearly with -8 mW/� above 85 �.
11. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Symbol
Rating
Unit
VCC
4.5 to 5.5
V
VEE
-7.5 to 0
VCC-VEE
4.5 to 12.0
VIN
0 to VCC
Switch I/O voltage
VI/O
Operating temperature
Topr
Input rise and fall times
tr,tf
Note
(Note 1)
V
VEE to VCC
V
-40 to 125
�
0 to 50
µs
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Note 1: Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after
July 2020.
©2016-2020
Toshiba Electronic Devices & Storage Corporation
4
2020-11-17
Rev.2.0
74HCT4053D
12. Electrical Characteristics
12.1. DC Characteristics (Unless otherwise specified, T a = 25 �)
Characteristics
High-level input voltage
Symbol
Test Condition
VIH
�
Low-level input voltage
VIL
ON-resistance
RON
Difference of ON-resistance
between switches
∆RON
Input/Output leakage current
(Switch OFF)
IOFF
Input/Output leakage current
(Switch ON)
II/O
VEE (V)
�
VCC (V)
Min
Typ.
Max
Unit
4.5 to 5.5
2.0
�
�
V
4.5 to 5.5
�
�
0.8
V
VIN = VIH or VIL
VI/O = VCC to VEE
II/O ≤ 2 mA
GND
4.5
�
85
180
Ω
-4.5
4.5
�
55
120
-5.5
5.5
�
50
110
VIN = VIH or VIL
VI/O = VCC or VEE
II/O ≤ 2 mA
GND
4.5
�
70
150
-4.5
4.5
�
50
100
-5.5
5.5
�
45
90
VIN = VIH or VIL
VI/O = VCC to VEE
II/O ≤ 2 mA
GND
4.5
�
10
30
-4.5
4.5
�
5
12
-5.5
5.5
�
5
11
VOS = VCC or GND
VIS = GND or VCC
VIN = VIH or VIL
GND
5.5
�
�
±0.06
-5.5
5.5
�
�
±0.1
VOS = VCC or GND
VIN = VIH or VIL
GND
5.5
�
�
±0.06
-5.5
5.5
�
�
±0.1
Ω
µA
µA
Control input leakage current
IIN
VIN = VCC or GND
GND
5.5
�
�
±0.1
µA
Quiescent supply current
ICC
VIN = VCC or GND
GND
5.5
�
�
4.0
µA
-5.5
5.5
�
�
8.0
ICC
Per input:
VIN = 0.5 V or 2.4 V
Other input: VCC or GND
GND
5.5
�
�
2.0
mA
12.2. DC Characteristics (Unless otherwise specified, T a = -40 to 85 �)
Characteristics
Symbol
Test Condition
High-level input voltage
VIH
Low-level input voltage
VIL
ON-resistance
RON
VEE (V)
VCC (V)
Min
Max
Unit
�
4.5 to 5.5
�
4.5 to 5.5
2.0
�
V
�
0.8
V
Ω
VIN = VIH or VIL
VI/O = VCC to VEE
II/O ≤ 2 mA
GND
4.5
�
225
-4.5
4.5
�
150
-5.5
5.5
�
140
VIN = VIH or VIL
VI/O = VCC or VEE
II/O ≤ 2 mA
GND
4.5
�
190
-4.5
4.5
�
125
-5.5
5.5
�
115
VIN = VIH or VIL
VI/O = VCC to VEE
II/O ≤ 2 mA
GND
4.5
�
35
-4.5
4.5
�
15
-5.5
5.5
�
14
VOS = VCC or GND
VIS = GND or VCC
VIN = VIH or VIL
GND
5.5
�
±0.6
-5.5
5.5
�
±1.0
Difference of ON-resistance
between switches
∆RON
Input/Output leakage current
(Switch OFF)
IOFF
Input/Output leakage current
(Switch ON)
II/O
VOS = VCC or GND
VIN = VIH or VIL
GND
5.5
�
±0.6
-5.5
5.5
�
±1.0
Control input leakage current
IIN
VIN = VCC or GND
GND
5.5
�
±1.0
µA
Quiescent supply current
ICC
VIN = VCC or GND
GND
5.5
�
40.0
µA
-5.5
5.5
�
80.0
GND
5.5
�
2.9
ICC
Per input:
VIN = 0.5 V or 2.4 V
Other input: VCC or GND
©2016-2020
Toshiba Electronic Devices & Storage Corporation
5
Ω
µA
µA
mA
2020-11-17
Rev.2.0
74HCT4053D
12.3. DC Characteristics (Note) (Unless otherwise specified, T a = -40 to 125 �)
Characteristics
Symbol
Test Condition
VEE (V)
VCC (V)
Min
Max
Unit
High-level input voltage
VIH
�
4.5 to 5.5
2.0
�
V
Low-level input voltage
VIL
�
4.5 to 5.5
�
0.8
V
ON-resistance
RON
Ω
Difference of ON-resistance
between switches
∆RON
Input/Output leakage current
(Switch OFF)
IOFF
Input/Output leakage current
(Switch ON)
II/O
VIN = VIH or VIL
VI/O = VCC to VEE
II/O ≤ 2 mA
GND
4.5
�
255
-4.5
4.5
�
170
-5.5
5.5
�
160
VIN = VIH or VIL
VI/O = VCC or VEE
II/O ≤ 2 mA
GND
4.5
�
220
-4.5
4.5
�
145
-5.5
5.5
�
135
VIN = VIH or VIL
VI/O = VCC to VEE
II/O ≤ 2 mA
GND
4.5
�
35
-4.5
4.5
�
15
-5.5
5.5
�
14
VOS = VCC or GND
VIS = GND to VCC
VIN = VIH or VIL
GND
5.5
�
±3.0
-5.5
5.5
�
±5.0
VOS = VCC or GND
VIN = VIH or VIL
GND
5.5
�
±3.0
-5.5
5.5
�
±5.0
Ω
µA
µA
Control input leakage current
IIN
VIN = VCC or GND
GND
5.5
�
±1.0
µA
Quiescent supply current
ICC
VIN = VCC or GND
GND
5.5
�
80.0
µA
-5.5
5.5
�
160.0
Per input:
VIN = 0.5 V or 2.4 V
Other input: VCC or GND
GND
5.5
�
2.9
Note:
mA
Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after
July 2020.
12.4. AC Characteristics
(Unless otherwise specified, C L = 50 pF, T a = 25 �, Input: t r = t f = 6 ns)
Characteristics
Phase difference between input
to output
Symbol
Test Condition
VEE (V)
VCC (V)
Min
Typ.
Max
Unit
φI/O
�
GND
4.5
�
6
12
ns
GND
5.5
�
5
11
Output enable time
tPZL,tPZH RL = 1 kΩ
Figure 1
GND
4.5
�
33
60
GND
5.5
�
26
45
Output disable time
tPLZ,tPHZ RL = 1 kΩ
Figure 1
GND
4.5
�
45
65
GND
5.5
�
37
59
�
�
�
5
10
pF
Control input capacitance
ns
ns
CIN
�
Common terminal capacitance
CIS
Figure 2
-5.0
5.0
�
11
20
pF
Switch terminal capacitance
COS
Figure 2
-5.0
5.0
�
7
15
pF
Feedthrough capacitance
CIOS
Figure 2
-5.0
5.0
�
0.75
2
pF
Power dissipation capacitance
CPD
Figure 2
(Note 1)
GND
5.0
�
10
�
pF
Note 1: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current
consumption without load. Average operating current can be obtained by the equation.
ICC(opr) = CPD × VCC × fIN + ICC
©2016-2020
Toshiba Electronic Devices & Storage Corporation
6
2020-11-17
Rev.2.0
74HCT4053D
12.5. AC Characteristics (Unless otherwise specified, C L = 50 pF, T a = -40 to 85 �,
Input: t r = t f = 6 ns)
Characteristics
Phase difference between input to
output
Output enable time
Output disable time
Symbol
Test Condition
VEE (V)
VCC (V)
Min
Max
Unit
φI/O
�
GND
4.5
�
15
ns
GND
5.5
�
13
tPZL,tPZH RL = 1 kΩ
Figure 1
GND
4.5
�
63
GND
5.5
�
57
tPLZ,tPHZ RL = 1 kΩ
Figure 1
GND
4.5
�
81
GND
5.5
�
73
ns
ns
Control input capacitance
CIN
�
�
�
�
10
pF
Common terminal capacitance
CIS
Figure 2
-5.0
5.0
�
20
pF
Switch terminal capacitance
COS
Figure 2
-5.0
5.0
�
15
pF
Feedthrough capacitance
CIOS
Figure 2
-5.0
5.0
�
2
pF
12.6. AC Characteristics (Note)
(Unless otherwise specified, C L = 50 pF, T a = -40 to 125 �, Input: t r = t f = 6 ns)
Characteristics
Phase difference between input to
output
Output enable time
Output disable time
Symbol
Test Condition
VEE (V)
VCC (V)
Min
Max
Unit
φI/O
�
GND
4.5
�
17
ns
GND
5.5
�
14
tPZL,tPZH RL = 1 kΩ
Figure 1
GND
4.5
�
65
GND
5.5
�
65
tPLZ,tPHZ RL = 1 kΩ
Figure 1
GND
4.5
�
92
GND
5.5
�
82
ns
ns
Control input capacitance
CIN
�
�
�
�
10
pF
Common terminal capacitance
CIS
Figure 2
-5.0
5.0
�
20
pF
Switch terminal capacitance
COS
Figure 2
-5.0
5.0
�
15
pF
Feedthrough capacitance
CIOS
Figure 2
-5.0
5.0
�
2
pF
Note:
Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after
July 2020.
©2016-2020
Toshiba Electronic Devices & Storage Corporation
7
2020-11-17
Rev.2.0
74HCT4053D
12.7. Analog Switch Characteristics (T a = 25 �) (Note)
Characteristics
Sine Wave Distortion
Maximum frequency
response
Feed through attenuation
(switch OFF)
Crosstalk (control input to
signal output)
Crosstalk (between any
switches)
Symbol
THD
Test Condition
RL = 10 kΩ, CL = 50 pF
fIN = 1 kHz
fMAX(I/O) Adjust fIN voltage to obtain 0 dBm
at VOS
Increase fIN frequency until dB
meter reads -3 dB
RL = 50 Ω, CL = 10 pF
fIN = 1 MHz, sine wave
Figure 3
FTH
Xtalk
Xtalk
Xtalk
VEE (V)
VCC (V)
Typ.
Unit
VIN = 8.0 Vp-p
-4.5
4.5
0.020
%
VIN = 11.0 Vp-p
-5.5
5.5
0.019
(Note 1)
-4.5
4.5
190
(Note 2)
(Note 1)
MHz
150
-5.5
5.5
(Note 2)
200
180
VIN is centered at (VCC - VEE)/2
Adjust input for 0 dBm.
RL = 600 Ω, CL = 50 pF,
fIN = 1 MHz, sine wave
Figure 4
-4.5
4.5
-50
-5.5
5.5
-50
RL = 600 Ω, CL = 50 pF,
fIN = 1 MHz,
square wave (tr = tf = 6 ns)
Figure 5
-4.5
4.5
140
-5.5
5.5
180
Adjust VIN to obtain 0 dBm at
input.
RL = 600 Ω, CL = 50 pF,
fIN = 1 MHz, sine wave
Figure 6
-4.5
4.5
-50
-5.5
5.5
-50
RL = 50 Ω, CL = 15 pF,
fIN = 100 KHz, VSWITCH = 1 VRMS
Figure 6
-4.5
4.5
-90
dB
mV
dB
dB
Note: These characteristics are determined by design of devices.
Note 1: Input COMMON terminal, and measured at SWITCH terminal.
Note 2: Input SWITCH terminal, and measured at COMMON terminal.
©2016-2020
Toshiba Electronic Devices & Storage Corporation
8
2020-11-17
Rev.2.0
74HCT4053D
13. AC Test Circuit
Figure 1 t PLZ , t PHZ , t PZL , t PZH
Figure 2 C IOS , C IS , C OS
Figure 3 Frequency Response
©2016-2020
Toshiba Electronic Devices & Storage Corporation
9
2020-11-17
Rev.2.0
74HCT4053D
Figure 4 Feedthrough Attenuation
Figure 5 Cross Talk (control input to output signal)
Figure 6 Cross Talk (between any two switches)
©2016-2020
Toshiba Electronic Devices & Storage Corporation
10
2020-11-17
Rev.2.0
74HCT4053D
Package Dimensions
Unit: mm
Weight: 0.15 g (typ.)
Package Name(s)
Nickname: SOIC16
©2016-2020
Toshiba Electronic Devices & Storage Corporation
11
2020-11-17
Rev.2.0
74HCT4053D
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2020-11-17
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