CUS02
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CUS02
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
•
•
Peak forward voltage: VFM = 0.45 V@IF = 0.7 A
0.13 +− 0.05
0.03
Average forward current: IF (AV) = 1.0 A
②
Repetitive peak reverse voltage: VRRM = 30 V
Suitable for high-density board assembly due to the use of a small
surface-mount package, US−FLATTM
1.9 ± 0.1
•
0.2
1.25 +− 0.1
0.88 ± 0.1
2.5 ± 0.2
•
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
①
Repetitive peak reverse voltage
VRRM
30
V
Average forward current
IF (AV)
1.0 (Note 1)
A
IFSM
20
A
Tj
−40 to 150
°C
Tstg
−40 to 150
°C
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature range
Note 1: Ta = 25°C:
(50 Hz)
Device mounted on a glass-epoxy board
Board size: 50 mm × 50 mm,
Land size: 6 mm × 6 mm
Rectangular waveform (α = 180°), VR = 15 V
0.88 ± 0.1
0.6 ± 0.1
① ANODE
② CATHODE
1.4 ± 0.2
Unit
0 ~ 0.05
Rating
0.5 ± 0.1
Symbol
0.6 ± 0.1
0.6 ± 0.1
Characteristics
0.78 ± 0.1
0.6 ± 0.1
―
JEDEC
JEITA
―
Note 2: Using continuously under heavy loads (e.g. the application of
TOSHIBA
3-2B1A
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.004 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance
(junction to ambient)
Thermal resistance (junction to lead)
Symbol
Test Condition
Min
Typ.
Max
VFM (1)
IFM = 0.1 A
―
0.35
―
VFM (2)
IFM = 0.7 A
―
0.42
0.45
VFM (3)
IFM = 1.0 A
―
0.47
―
IRRM (1)
VRRM = 5 V
―
0.7
―
IRRM (2)
VRRM = 30 V
―
10
100
VR = 10 V, f = 1.0 MHz
―
40
―
Device mounted on a ceramic board
(Board size: 50 mm × 50 mm ,
Land size: 2 mm × 2 mm)
―
―
75
Cj
Rth (j-a)
Rth (j-ℓ)
Unit
V
μA
pF
°C/W
Device mounted on a glass-epoxy
board
(Board size: 50 mm × 50 mm ,
Land size: 6 mm × 6 mm)
―
―
150
Junction to lead of cathode side
―
―
30
°C/W
Start of commercial production
2001-12
1
2015-07-16
CUS02
Marking
Abbreviation Code
Part No.
2
CUS02
Land pattern dimensions for reference only
Unit: mm
2.0
1.1
0.5
0.8
0.8
Handling Precaution
1)
Schottky barrier diodes have reverse current characteristics compared to other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
2)
The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we
recommend for designing a circuit using this device.
VRRM:
Use this rating with reference to the 1). VRRM has a temperature coefficient of 0.1%/°C. Take this
temperature coefficient into account designing a device at low temperature.
IF(AV):
The worst-case current is no greater than 80% of the absolute maximum rating of IF(AV) and Tj be
below 120°C. When using this device, take the margin into consideration by using an allowable Ta
max-IF(AV) curve.
IFSM:
This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,
which seldom occurs during the lifespan of the device.
Tj:
Derate this rating when using a device in order to ensure high reliability. The device is used at Tj
below 120°C.
3)
Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition.
When using a device, design a circuit board and a soldering land size to match the appropriate thermal
resistance value.
4)
Refer to the Rectifiers databook for further information.
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2015-07-16
CUS02
iF – vF
Average forward power dissipation
PF (AV) (W)
iF
75°C
100°C
25°C
0.1
0.4
0.2
0.6
0.8
Instantaneous forward voltage
0.4
120°
0.3
α = 60°
Rectangular
waveform
0.2
0° α 360°
0.1
vF
0
0.0
180°
DC
IF (AV)
Rectangular
waveform
40
20
120°
0° α 360°
Conduction
angle: α
VR = 15 V
0.2
0.4
0.6
0.8
Average forward current
1.0
1.2
1.4
0° α 360°
20
0
0.0
180°
DC
Rectangular
waveform
40
Conduction
angle: α
VR = 15 V
0.2
0.4
0.8
Average forward current
1.0
1.6
IF (AV) (A)
100
80 α = 60°
Rectangular
waveform
60
40
0° α 360°
20
120°
180°
DC
Conduction
angle: α
VR = 15 V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IF (AV) (A)
1000
(2) Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
land size: 6.0 mm × 6.0 mm
board thickness: 1.6 mm
(3) Device mounted on a glass-epoxy board:
Board size: 50 mm × 50 mm
Reference land size
board thickness: 1.6 mm
1.2
1.4
1.6
(3)
(2)
(1)
100
(1) Device mounted on a ceramic board:
board size: 50 mm × 50 mm
land size: 2.0 mm × 2.0 mm
board thickness : 0.64 mm
10
1
0.001
0.6
1.4
120
10000
IF (AV)
60
1.2
rth (j-a) – t
100
120°
1.0
Average forward current
120
α = 60°
140
IF (AV) (A)
140
80
0.8
Device mounted on a glass-epoxy
board
(board size: 50 mm × 50 mm,
land size: 6 mm × 6 mm)
0
0.0
1.6
Tℓmax – IF (AV)
160
0.6
Ta max – IF (AV)
160
Maximum allowable ambient temperature
Ta max (°C)
100
α = 60°
0.4
Average forward current
120
80
0.2
(V)
Device mounted on a ceramic board
(board size: 50 mm × 50 mm
land size: 2 mm × 2 mm)
140
60
0
0.0
1.0
Ta max – IF (AV)
160
Maximum allowable ambient temperature
Ta max (°C)
180°
IF (AV)
0.01
0.0
Maximum allowable lead temperature
Tℓmax (°C)
DC
0.5
Conduction
angle: α
Transient thermal impedance
rth (j-a) (°C/W)
Instantaneous forward current
Tj = 150°C
1
PF (AV) – IF (AV)
0.6
(A)
10
0.01
0.1
1
10
100
1000
Time t (s)
IF (AV) (A)
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CUS02
Surge forward current (non-repetitive)
Cj – VR
1000
Ta = 25°C
(typ.)
f = 1 MHz
Ta = 25°C
f = 50 Hz
(pF)
20
Cj
16
Junction capacitance
Peak surge forward current IFSM
(A)
24
12
8
4
0
1
10
100
100
10
1
Number of cycles
10
100
Reverse voltage VR
I R – Tj
100
(typ.)
0.8
(mA)
Reverse current IR
Average reverse power dissipation
PR (AV) (W)
Pulse test
10
VR = 30 V
20 V
1
15 V
10 V
0.1
5V
3V
0.01
0.001
0.0001
0
20
40
60
80
100
Junction temperature Tj
120
140
(°C)
PR (AV) – VR
0.6
0.5
DC
0° α 360°
Conduction
angle: α
Tj = 150°C
300°
240°
0.4
180°
0.3
120°
0.2
60°
0.1
10
20
Reverse voltage VR
4
(typ.)
Rectangular
waveform
0.7
0.0
0
160
(V)
30
(V)
2015-07-16
CUS02
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
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TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
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OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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