CUS01(TE85L,Q,M)

CUS01 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CUS01 Unit: mm Portable Equipment Battery Applications 0.2 1.25 +− 0.1 Repetitive peak reverse voltage : VRRM = 30 V 0.13 +− 0.05 0.03 0.88 ± 0.1 : IF (AV) = 1.0 A • Average forward current • Peak forward voltage • Suitable for high-density board assembly due to the use of a small ② Toshiba Nickname: US−FLATTM 1.9 ± 0.1 : VFM = 0.37 V (max) @IF = 0.7 A 2.5 ± 0.2 Absolute Maximum Ratings (Ta = 25°C) Unit Repetitive peak reverse voltage VRRM 30 V Average forward current IF (AV) 1.0 (Note 1) A IFSM 20 (50 Hz) A Tj −40 to 125 °C Tstg −40 to 150 °C Non-repetitive peak forward surge current Junction temperature Storage temperature range 0.6 ± 0.1 0.6 ± 0.1 ① ANODE ② CATHODE Note 1: Tℓ = 86°C: Rectangular waveform (α = 180°), VR = 15 V Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 0.88 ± 0.1 0 ~ 0.05 Rating 0.78 ± 0.1 0.5 ± 0.1 Symbol 0.6 ± 0.1 Characteristics ① 1.4 ± 0.2 • 0.6 ± 0.1 JEDEC ― JEITA ― TOSHIBA 3-2B1S Weight: 0.004 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Peak forward voltage Repetitive peak reverse current Junction capacitance Thermal resistance (junction to ambient) Thermal resistance (junction to lead) Symbol Test Condition Min Typ. Max Unit VFM (1) IFM = 0.1 A (pulse test) ― 0.25 ― VFM (2) IFM = 0.7 A (pulse test) ― 0.33 0.37 VFM (3) IFM = 1.0 A (pulse test) ― 0.39 ― IRRM (1) VRRM = 5 V (pulse test) ― 50 ― μA IRRM (2) VRRM = 30 V (pulse test) ― 0.5 1.5 mA VR = 10 V, f = 1.0 MHz ― 40 ― pF Device mounted on a ceramic board board size 50 mm × 50 mm soldering land size 2 mm × 2 mm board thickness 0.64 mm ― ― 75 Device mounted on a glass-epoxy board board size 50 mm × 50 mm soldering land size 6 mm × 6 mm board thickness 1.6 mm ― ― 150 Junction to lead of cathode side ― ― 30 Cj Rth (j-a) Rth (j-ℓ ) V °C/W °C/W Start of commercial production 1 2001-12 2018-07-11 CUS01 Marking Abbreviation Code Part No. 1 CUS01 Land pattern dimensions for reference only Unit: mm 2.0 1.1 0.5 0.8 0.8 Handling Precaution 1) Schottky barrier diodes have reverse current characteristic compared to the other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. This device is VF-IRRM trade-off type, lower VF higher IRRM; therefore, thermal runaway might occur when voltage is applied. Please take forward and reverse loss into consideration during design. 2) The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend for designing a circuit using this device. VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/°C. Take this temperature coefficient into account designing a device at low temperature. IF(AV): We recommend that the worst-case current be no greater than 80% of the absolute maximum rating of IF(AV) and Tj be below 100°C. When using this device, take the margin into consideration by using an allowable Ta max-IF(AV) curve. IFSM: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, which seldom occurs during the lifespan of the device. Tj: Derate this rating when using a device in order to ensure high reliability. We recommend that the device be used at Tj below 100°C. 3) Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When using a device, please design a circuit board and a soldering land size to match the appropriate thermal resistance value. 4) For other design considerations, see the Toshiba website. 2 2018-07-11 CUS01 I F – VF PF (AV) – IF (AV) 10 0.5 Average forward power dissipation PF (AV) (W) (A) DC Tj = 125°C Forward current IF 1 75°C 25°C 0.1 0.4 180° 120° 0.3 α = 60° 0.2 Rectangular waveform 0.1 0° α 360° Conduction angle: α Pulse test 0.01 0 0.2 0.4 0.6 Forward voltage 0.8 VF 0 0 1.0 0.2 0.4 60 0 0 IF (AV) Rectangular waveform 0° α 360° α = 180° Conduction angle: α VR = 15 V 0.2 0.4 0.6 0.8 DC 1.0 Average forward current 1.4 1.6 IF (AV) (A) 1.2 1.4 120 100 80 60 40 20 0 0 1.6 IF (AV) (A) α = 60° Rectangular waveform 120° 180° DC IF (AV) Maximum allowable lead temperature Tℓ max (°C) Maximum allowable ambient temperature Ta max (°C) 80 20 1.2 Tℓ max – IF (AV) 100 40 1.0 140 Device mounted on a ceramic board: board size: 50 mm × 50 mm Soldering land size: 2 mm × 2 mm board thickness: 0.64 mm 120 0.8 Average forward current (V) Ta max – IF (AV) 140 0.6 0° α 360° Conduction angle: α VR = 15 V 0.2 0.4 0.6 0.8 Average forward current 1.0 1.2 1.4 1.6 IF (AV) (A) rth (j-a) – t Transient thermal resistance rth (j-a) (°C/W) 1000 Device mounted on a glass-epoxy board: board size: 50 mm × 50 mm Soldering land size : 6 mm × 6 mm board thickness: 1.6 mm 100 Device mounted on a ceramic board: board size : 50 mm × 50 mm Soldering land size: 2 mm × 2 mm board thickness: 0.64 mm 10 1 0.001 0.01 0.1 1 10 100 1000 Time t (s) 3 2018-07-11 CUS01 Peak repetitive forward current 24 Ta = 25°C 16 (typ.) f = 1 MHz Ta = 25°C f = 50 Hz Junction capacitance Cj (pF) Peak repetitive forward current (A) IFRM 20 Cj – VR 1000 12 8 4 0 1 10 100 100 10 1 Number of cycles 10 100 Reverse voltage VR I R – Tj (typ.) PR (AV) – VR 100 2.5 Average reverse power dissipation PR (AV) (W) Reverse current IR (mA) Pulse test VR = 30 V 10 20 V 15 V 10 V 1 5V 3V 0.1 0.01 0 20 40 60 80 100 Junction temperature Tj 120 (V) 2.0 1.5 (°C) DC 0° α 360° Conduction angle: α Tj = 125°C 300° 240° 180° 1.0 120° 0.5 0.0 0 140 60° 10 20 Reverse voltage VR 4 (typ.) Rectangular waveform 30 (V) 2018-07-11 CUS01 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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