GT10Q301

GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Motor Control Applications · The 3rd generation · Enhancement-mode · High speed: tf = 0.32 µs (max) · Low saturation voltage: VCE (sat) = 2.7 V (max) · FRD included between emitter and collector Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±20 V DC IC 10 1 ms ICP 20 IF 10 IFM 20 PC 140 W Tj 150 °C Tstg −55 to 150 °C Collector current DC Emitter-collector forward current 1 ms Collector power dissipation (Tc = 25°C) A A JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g (typ.) Junction temperature Storage temperature range Equivalent Circuit Collector Gate Emitter 1 2002-10-29 GT10Q301 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ― ― ±500 nA Collector cut-off current ICES VCE = 1200 V, VGE = 0 ― ― 1.0 mA IC = 1 mA, VCE = 5 V 4.0 ― 7.0 V Gate-emitter cut-off voltage VGE (OFF) Collector-emitter saturation voltage Input capacitance VCE (sat) Cies Rise time IC = 10 A, VGE = 15 V ― 2.1 2.7 V VCE = 50 V, VGE = 0, f = 1 MHz ― 600 ― pF ― 0.07 ― ― 0.30 ― ― 0.16 0.32 ― 0.50 ― tr Turn-on time ton Switching time Fall time tf Turn-off time Inductive load µs VCC = 600 V, IC = 10 A VGG = ±15 V, RG = 75 Ω (Note) toff Peak forward voltage VF IF = 10 A, VGE = 0 ― ― 3.0 V Reverse recovery time trr IF = 10 A, di/dt = −200 A/µs ― ― 350 ns Thermal resistance (IGBT) Rth (j-c) ― ― ― 0.89 °C/W Thermal resistance (diode) Rth (j-c) ― ― ― 1.79 °C/W Note: Switching time measurement circuit and input/output waveforms VGE RG 90% 10% 0 −VGE IC RG VCC L IC 90% VCE 0 VCE 10% 10% td (off) 90% 10% td (on) 10% tr tf toff 2 ton 2002-10-29 GT10Q301 IC – VCE VCE – VGE 20 20 13 Common emitter 12 VCE 20 12 8 VGE = 10 V 4 0 0 Tc = −40°C 15 16 Collector-emitter voltage Collector current IC (A) Tc = 25°C (V) Common emitter 1 2 3 4 Collector-emitter voltage VCE 16 12 8 IC = 4 A 4 0 0 5 (V) 4 8 VCE – VGE 16 20 (V) VCE – VGE Common emitter (V) (V) 12 20 Common emitter Tc = 25°C Tc = 125°C VCE 16 Collector-emitter voltage VCE 20 Gate-emitter voltage VGE 20 12 8 IC = 4 A 10 20 4 16 12 8 IC = 4 A 10 20 4 ) Collector-emitter voltage 10 0 0 4 8 12 Gate-emitter voltage VGE 16 0 0 20 (V) 4 8 IC – VGE 16 12 8 25 4 Tc = 125°C 4 20 Common emitter Collector-emitter saturation voltage VCE (sat) (V) (A) (V) VCE (sat) – Tc VCE = 5 V IC 20 4 Common emitter Collector current 16 Gate-emitter voltage VGE 20 0 0 12 −40 8 12 Gate-emitter voltage VGE 16 VGE = 15 V 3 10 2 IC = 4 A 1 0 −60 20 (V) −20 20 60 Case temperature Tc 3 100 140 (°C) 2002-10-29 GT10Q301 Switching Time ton, tr – RG Switching Time ton, tr – IC 1 1 (µs) 0.3 tr Common emitter VCC = 600 V VGG = ±15 V IC = 10 A : Tc = 25°C : Tc = 125°C 0.03 0.01 3 Switching time Switching time 0.1 0.05 5 0.3 ton, tr ton ton, tr (µs) 0.5 10 30 50 100 Gate resistance RG ton 0.1 0.03 0.01 0 300 500 Common emitter VCC = 600 V VGG = ±15 V RG = 75 Ω : Tc = 25°C : Tc = 125°C tr 2 (Ω) (µs) 1 toff, tf toff 0.3 8 IC 10 12 10 12 (A) Switching Time toff, tf – IC 3 Common emitter VCC = 600 V VGG = ±15 V IC = 10 A : Tc = 25°C : Tc = 125°C Switching time (µs) toff, tf 0.5 Switching time 1 6 Collector current Switching Time toff, tf – RG 3 4 tf 0.1 Common emitter VCC = 600 V VGG = ±15 V RG = 75 Ω : Tc = 25°C : Tc = 125°C toff 0.3 tf 0.1 0.05 0.03 3 5 10 30 50 100 Gate resistance RG 0.05 0 300 500 2 (Ω) Eon, Eoff (mJ) 3 Eon 1 Eoff 0.5 0.3 0.1 3 5 10 30 50 100 Gate resistance RG 8 IC (A) Switching Loss Eon, Eoff – IC 10 Common emitter VCC = 600 V VGG = ±15 V IC = 10 A : Tc = 25°C : Tc = 125°C Switching loss Eon, Eoff (mJ) Switching loss 5 6 Collector current Switching Loss Eon, Eoff – RG 10 4 3 1 0.3 Eon 0.1 Eoff 0.03 0.01 0 300 500 (Ω) Common emitter VCC = 600 V VGG = ±15 V RG = 75 Ω : Tc = 25°C : Tc = 125°C 2 4 6 Collector current 4 8 IC 10 12 (A) 2002-10-29 GT10Q301 VCE, VGE – QG (V) VCE Cies 300 Collector-emitter voltage 100 Coes 30 Cres 10 Common emitter 3 VGE = 0 f = 1 MHz Tc = 25°C 1 0.1 0.3 1 3 10 30 100 Collector-emitter voltage VCE 300 800 600 4 200 0 0 1000 20 40 (V) Tc= 125°C Common collector 1 2 3 Forward voltage 4 VF trr trr 10 100 Irr Common collector di/dt = −200 A/µs VGE = 0 3 : Tc = 25°C : Tc = 125°C ) VGE = 0 0 0 (ns) (A) 1000 30 Reverse recovery current Irr (A) Forward current IF −40 4 1 0 5 2 (V) 4 100 50 50 50 µs* IC IC max (continuous) Collector current 1 ms* DC operation 10 ms* *: Single nonrepetitive pulse Tc = 25°C Curves must be 0.5 derated linearly with 0.3 increase in temperature. 1 10 IF 10 10 12 (A) 30 100 µs* (A) 30 IC max (pulsed)* 3 8 Reverse Bias SOA 100 3 6 Forward current Safe Operating Area (A) (nC) trr, Irr – IF 25 8 IC QG 0 100 80 100 12 Collector current 60 Gate charge 16 0.1 1 8 VCE = 200 V IF – VF 5 12 400 600 400 20 10 16 Reverse recovery time Capacitance C (pF) 1000 20 Common emitter RL = 60 Ω Tc = 25°C (V) 1000 Gate-emitter voltage VGE C – VCE 3000 30 100 Collector-emitter voltage 300 VCE 1000 10 5 3 1 0.5 0.3 0.1 1 3000 (V) Tj ≤ 125°C VGE = ±15 V RG = 43 Ω 3 10 30 100 Collector-emitter voltage 5 300 VCE 1000 3000 (V) 2002-10-29 GT10Q301 rth (t) – tw 102 Transient thermal impedance rth (t) (°C/W) Tc = 25°C 101 Diode stage 100 IGBT stage 10−1 10−2 10−3 10−4 −5 10 10−4 10−3 10−2 Pulse width 10−1 tw 100 101 102 (s) 6 2002-10-29 GT10Q301 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 2002-10-29 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.