GT25Q301

GT25Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q301 High Power Switching Applications Motor Control Applications • • • • • Third-generation IGBT Enhancement mode type High speed: tf = 0.32 μs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 ±20 25 50 25 50 200 150 −55 to 150 Unit V V A Diode forward current A W °C °C JEDEC JEITA TOSHIBA ― ― 2-21F2C Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Weight: 9.75 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Marking Part No. (or abbreviation code) TOSHIBA Gate Emitter GT25Q301 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT25Q301 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Diode forward voltage Reverse recovery time Thermal resistance (IGBT) Thermal resistance (diode) tf toff VF trr Rth (j-c) Rth (j-c) IF = 25 A, VGE = 0 IF = 25 A, di/dt = −200 A/μs ― ― Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton Inductive load VCC = 600 V, IC = 25 A VGG = ±15 V, RG = 43 Ω (Note) ― ― ― ― ― ― 0.16 0.68 ― ― ― ― 0.32 ― 3.0 350 0.625 1.38 V ns °C/W °C/W Test Condition VGE = ±20 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 2.5 mA, VCE = 5 V IC = 25 A, VGE = 15 V VCE = 50 V, VGE = 0, f = 1 MHz Min ― ― 4.0 ― ― ― ― Typ. ― ― ― 2.1 1360 0.10 0.30 Max ±500 1.0 7.0 2.7 ― ― ― μs Unit nA mA V V pF Note: Switching time measurement circuit and input/output waveforms VGE RG VCC −VGE IC RG L 0 90% 10% IC 90% 90% 10% td (on) tf toff ton tr 10% VCE 0 VCE 10% td (off) 10% 2 2006-11-01 GT25Q301 IC – VCE 50 20 Common emitter Tc = 25°C Common emitter VCE – VGE VCE (V) Tc = −40°C 16 (A) 40 20 30 15 Collector current IC Collector-emitter voltage 12 20 10 10 8 IC = 10 A 4 25 50 VGE = 9 V 0 0 1 2 3 4 5 0 0 4 8 12 16 20 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE – VGE 20 Common emitter 20 Common emitter Tc = 25°C 16 VCE – VGE VCE (V) VCE (V) Tc = 125°C 16 Collector-emitter voltage Collector-emitter voltage 12 12 8 50 4 IC = 10 A 25 8 50 4 IC = 10 A 25 0 ) 0 4 8 12 16 20 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC – VGE 50 Common emitter 40 4 VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) VCE = 5 V 50 3 25 Collector current IC (A) 30 2 IC = 10 A 20 25 1 Common emitter VGE = 15 V 10 Tc = 125°C −40 0 0 4 8 12 16 20 0 −60 −20 20 60 100 140 Gate-emitter voltage VGE (V) Case temperature Tc (°C) 3 2006-11-01 GT25Q301 Switching Time 3 Common emitter VCC = 600 V VGG = ±15 V IC = 25 A : Tc = 25°C : Tc = 125°C ton, tr – RG 1 Switching Time ton, tr – IC (μs) 1 (μs) ton ton 0.3 Switching time ton, tr 0.5 0.3 Switching time ton, tr 0.1 tr Common emitter VCC = 600 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C 0 5 10 15 20 25 30 tr 0.1 0.03 0.05 3 5 10 30 50 100 300 500 0.01 Gate resistance RG (Ω) Collector current IC (A) Switching Time 3 Common emitter VCC = 600 V VGG = ±15 V IC = 25 A : Tc = 25°C 1 : Tc = 125°C 0.5 0.3 toff, tf – RG 1 toff Switching Time toff, tf – IC toff Switching time toff, tf (μs) Switching time toff, tf (μs) 0.3 tf 0.1 Common emitter VCC = 600 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C 0 5 10 15 20 25 30 tf 0.1 0.03 0.05 3 5 10 30 50 100 300 500 0.01 Gate resistance RG (Ω) Collector current IC (A) Switching Loss Switching Loss 30 Eon, Eoff – IC Eon, Eoff – RG Eon, Eoff (mJ) 10 Eon, Eoff (mJ) Common emitter VCC = 600 V VGG = ±15 V IC = 25 A 10 : Tc = 25°C : Tc = 125°C 5 3 3 Eon Eon 1 Eoff Switching loss Eoff Switching loss 0.3 1 0.5 3 5 10 30 50 100 300 500 0.1 Common emitter VCC = 600 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C 0 5 10 15 20 25 30 Gate resistance RG (Ω) Collector current IC (A) 4 2006-11-01 GT25Q301 C – VCE 1000 10000 VCE, VGE – QG Common emitter RL = 12 Ω Tc = 25°C 400 12 20 Collector-emitter voltage VCE (V) 800 16 (pF) 3000 1000 Cies 600 600 Capacitance C 300 100 Common emitter VGE = 0 f = 1 MHz Tc = 25°C 0.3 1 3 10 30 100 Coes Cres 400 VCE = 200 V 8 30 10 0.1 200 4 300 1000 0 0 40 80 120 160 0 200 Collector-emitter voltage VCE (V) Gate charge QG (nC) IF – V F 50 Common emitter VGE = 0 40 −40 100 trr, Irr – IF 1000 Reverse recovery current Irr (A) (A) 25 30 Forward current IF 10 20 Irr 100 3 10 Tc = 125°C Common emitter di/dt = −200 A/μs VGE = 0 : Tc = 25°C : Tc = 125°C 5 10 15 20 25 10 30 0 0 1 2 3 4 5 1 0 Forward voltage VF (V) Forward current IF (A) Safe Operating Area 100 50 30 IC max (pulsed)* IC max (continuous) 100 μs* 50 μs* 100 50 30 Reverse Bias SOA (A) Collector current IC 5 3 DC operation 1 m s* Collector current IC 10 (A) 10 5 3 1 0.5 0.3 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 3 10 30 100 10 ms* 1 0.5 0.3 Tj ≤ 125°C VGE = ±15 V RG = 43 Ω 3 10 30 100 300 1000 3000 0.1 1 300 1000 3000 0.1 1 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 5 2006-11-01 Reverse recovery time trr trr 30 (ns) Gate-emitter voltage VGE (V) GT25Q301 rth (t) – tw 102 Tc = 25°C 1 Transient thermal impedance rth (t) (°C/W) 10 Diode stage 100 IGBT stage 10−1 10−2 10−3 10−4 −5 10 10−4 10−3 10−2 10−1 100 101 102 Pulse width tw (s) 6 2006-11-01 GT25Q301 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-01