GT15J321_06

GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • • • • • • Fourth-generation IGBT Fast switching (FS Enhancement mode type High speed: tf = 0.03 μs (typ.) Low saturation Voltage: VCE (sat) = 1.90 V (typ.) FRD included between emitter and collector Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg Rating 600 ±20 15 30 15 30 30 150 −55~150 Unit V V A A W °C °C JEDEC JEITA TOSHIBA Weight: 1.7 g ― ― 2-10R1C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Marking Gate 15J321 Emitter Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-10-31 GT15J321 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Peak forward voltage Reverse recovery time Thermal resistance (IGBT) Thermal resistance (Diode) Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr Rth (j-c) Rth (j-c) IF = 15 A, VGE = 0 IF = 15 A, di/dt = −100 A/μs ⎯ ⎯ Test Condition VGE = ±20 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 1.5 mA, VCE = 5 V IC = 15 A, VGE = 15 V VCE = 20 V, VGE = 0, f = 1 MHz Inductive Load VCC = 300 V, IC = 15 A VGG = 15 V, RG = 43 Ω (Note 1) Min ⎯ ⎯ 3.5 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 1.90 2300 0.04 0.17 0.03 0.34 ⎯ ⎯ ⎯ ⎯ Max ±500 1.0 6.5 2.45 ⎯ Unit nA mA V V pF ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.15 μs ⎯ 2.0 200 4.16 4.63 V ns °C/W °C/W Note 1: Switching time measurement circuit and input/output waveforms VGE 0 −VGE IC RG VCE 0 VCE 10% td (off) tf toff ton 10% 10% td (on) tr 10% L VCC IC 90% 90% 90% 10% Note 2: Switching loss measurement waveforms VGE 0 90% 10% IC VCE 5% 0 Eoff Eon 2 2006-10-31 GT15J321 IC – VCE 50 20 Common emitter Tc = 25°C 40 VCE – VGE Common emitter VCE (V) Tc = −40°C 16 Collector current IC (A) Collector-emitter voltage 30 20 15 9 12 30 15 8 20 8 10 VGE = 7 V 0 0 1 2 3 4 5 4 IC = 6 A 0 0 4 8 12 16 20 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE – VGE 20 Common emitter 20 VCE – VGE Common emitter VCE (V) 16 VCE (V) Tc = 25°C Tc = 125°C 16 Collector-emitter voltage 12 30 Collector-emitter voltage 12 30 15 8 15 8 4 IC = 6 A 4 IC = 6 A 0 0 4 8 12 16 20 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC – VGE 30 4 Common emitter VCE = 5 V Common emitter VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) 25 VGE = 15 V 3 30 A (A) Collector current IC 20 15 A 2 15 10 IC = 6 A 1 5 Tc = 125°C 25 −40 0 0 4 8 12 16 20 0 −60 −20 20 60 100 140 Gate-emitter voltage VGE (V) Case temperature Tc (°C) 3 2006-10-31 GT15J321 Switching time 3 Common emitter VCC = 300 V VGG = 15 V IC = 1 5 A : Tc = 25°C : Tc = 125°C ton 0.1 0.05 0.03 tr ton, tr – RG 3 Switching time Common emitter VCC = 300 V VGG = 15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C ton, tr – IC (μs) (μs) Switching time ton, tr 1 0.5 0.3 1 0.5 0.3 Switching time ton, tr 0.1 0.05 0.03 ton tr 0.01 1 3 10 30 100 300 1000 0.01 0 3 6 9 12 15 Gate resistance RG (Ω) Collector current IC (A) Switching time 3 Common emitter VCC = 300 V VGG = 15 V IC = 1 5 A : Tc = 25°C : Tc = 125°C toff, tf – RG 3 Switching time toff, tf – IC Switching time toff, tf (μs) Switching time toff, tf (μs) 1 0.5 0.3 1 0.5 0.3 tf 0.1 0.05 0.03 Common emitter VCC = 300 V VGG = 15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C 0 3 6 9 12 15 toff toff 0.1 0.05 0.03 tf 0.01 1 3 10 30 100 300 1000 0.01 Gate resistance RG (Ω) Collector current IC (A) Switching loss 10 5 Common emitter VCC = 300 V VGG = 15 V IC = 1 5 A : Tc = 25°C : Tc = 125°C (Note 2) Eon Eon, Eoff – RG 10 5 Switching loss Common emitter VCC = 300 V VGG = 15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C (Note 2) Eon, Eoff – IC Eon, Eoff (mJ) 3 Eon, Eoff (mJ) Switching loss 3 1 0.5 0.3 1 0.5 0.3 Switching loss 0.1 0.05 0.03 Eoff 0.1 0.05 0.03 1 3 10 30 100 300 1000 Eoff Eon 0.01 0 3 6 9 12 15 Gate resistance RG (Ω) Collector current IC (A) 4 2006-10-31 GT15J321 C – VCE 3000 Cies 500 Common emitter VCE, VGE – QG 20 VCE (V) 16 300 Collector-emitter voltage Capacitance C 100 300 200 VCE = 100 V 100 200 4 8 30 Common emitter VGE = 0 f = 1 MHz Tc = 25°C 3 10 30 100 Coes Cres 10 3 1 300 1000 3000 0 0 20 40 60 80 100 0 120 Collector-emitter voltage VCE (V) Gate charge QG (nC) IF − VF 30 100 Common collector VGE = 0 Common collector di/dt = −100 A/μs VGE = 0 : Tc = 25°C : Tc = 125°C trr, Irr − IF 1000 25 Reverse recovery current Irr (A) (A) 30 300 Forward current IF 20 15 10 trr 100 10 Tc = 125°C 25 Irr 3 30 5 −40 0 0 0.4 0.8 1.2 1.6 2.0 1 0 3 6 9 12 10 15 Forward voltage VF (V) Forward current IF (A) Safe operating area 50 30 IC max (pulsed)* IC max (continuous) 50 μs* 50 30 Reverse bias SOA (A) 10 5 3 DC operation 10 ms* 1 m s* (A) 100 μs* 10 5 3 Collector current IC *: Single nonrepetitive pulse 0.5 Tc = 25°C 0.3 Curves must be derated linearly with increase in temperature. 0.1 1 3 10 1 Collector current IC 1 0.5 0.3 Tj < 125°C = VGE = 15 V RG = 43 Ω 30 100 300 1000 0.1 1 3 10 30 100 300 1000 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 5 2006-10-31 Reverse recovery time trr (ns) Gate-emitter voltage 300 12 VGE (V) 1000 RL = 20 Ω 400 Tc = 25°C (pF) GT15J321 10 2 Tc = 25°C 1 FRD rth (t) – tw Transient thermal impedance rth (t) (°C/W) 10 10 0 IGBT 10 −1 10 −2 10 −3 10 −4 10 −5 10 −4 10 −3 10 −2 10 −1 10 0 10 1 10 2 Pulse width tw (s) 6 2006-10-31 GT15J321 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-10-31