GT20J101

GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101 High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.30 μs (max) • Low saturation voltage: VCE (sat) = 2.7 V (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 20 1 ms ICP 40 PC 130 W Tj 150 °C JEDEC ― Tstg −55~150 °C JEITA ― Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range A Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-16C1C temperature/current/voltage and the significant change in Weight: 4.6 g temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking TOSHIBA GT20J101 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT20J101 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ⎯ ⎯ ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 ⎯ ⎯ 1.0 mA VGE (OFF) IC = 2 mA, VCE = 5 V 5.0 ⎯ 8.0 V VCE (sat) IC = 20 A, VGE = 15 V ⎯ 2.1 2.7 V VCE = 20 V, VGE = 0, f = 1 MHz ⎯ 1450 ⎯ pF ⎯ 0.12 ⎯ VCC = 300 V, IC = 20 A ⎯ 0.40 ⎯ VGG = ±15 V, RG = 56 Ω ⎯ 0.15 0.30 ⎯ 0.50 ⎯ ⎯ ⎯ 0.96 Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Switching time Cies Rise time tr Turn-on time ton Fall time tf Turn-off time toff Thermal resistance Inductive Load (Note1) ⎯ Rth (j-c) μs °C/W Note1: Switching time measurement circuit and input/output waveforms VGE GT20J301 90% 10% 0 −VGE IC L RG IC VCC 90% VCE 0 VCE 10% 10% td (off) 90% 10% td (on) 10% tr tf toff ton Note2: Switching loss measurement waveforms VGE 90% 10% 0 IC 0 VCE 10% Eoff Eon 2 2006-11-01 GT20J101 IC – VCE VCE – VGE 50 20 20 Common emitter 15 VCE (V) Common emitter Tc = 25°C 13 30 Collector-emitter voltage Collector current IC (A) 40 12 20 10 0 VGE = 10 V 0 1 2 3 4 Collector-emitter voltage Tc = −40°C 16 12 8 10 4 IC = 5 A 0 0 5 4 VCE (V) 8 VGE (V) Common emitter VCE (V) Tc = 25°C 16 Collector-emitter voltage VCE (V) Collector-emitter voltage 20 20 Common emitter 12 8 10 20 40 IC = 5 A 4 0 4 8 12 Gate-emitter voltage 16 Tc = 125°C 16 12 8 20 4 IC = 5 A 4 8 12 Gate-emitter voltage VGE (V) IC – VGE 16 20 VGE (V) VCE (sat) – Tc 4 Common emitter Common emitter Collector-emitter saturation voltage VCE (sat) (V) VCE = 5 V 40 30 20 25 10 Tc = 125°C 0 0 40 10 0 0 20 50 (A) 16 VCE – VGE VCE – VGE Collector current IC 12 Gate-emitter voltage 20 0 20 40 4 8 −40 12 Gate-emitter voltage 16 VGE = 15 V 3 30 2 VGE (V) 20 10 IC = 5 A 1 0 −60 20 40 −20 20 60 100 140 Case temperature Tc (°C) 3 2006-11-01 GT20J101 Switching time Switching time 3 0.5 tr 0.3 0.1 1 0.5 0.3 ton 0.1 0.05 0.03 tr 0.05 10 30 100 Gate resistance Switching time 1 toff, tf – RG toff tf 0.05 30 100 Gate resistance Switching loss 1 300 RG 12 20 16 (A) toff, tf – IC 0.3 0.1 0.03 4 Eon 0.3 100 8 Switching loss 10 RG Common emitter VCC = 300 V VGG = ±15 V RG = 56 Ω : Tc = 25°C : Tc = 125°C (Ω) Common emitter VCC = 300 V VGG = ±15 V IC = 20 A : Tc = 25°C : Tc = 125°C Note2 Gate resistance tf 0.05 Eon, Eoff – RG 10 toff 0.5 12 Collector current IC Eoff 0.1 1 1 0.01 0 1000 Switching loss Eon, Eoff (mJ) Switching time 0.1 3 8 3 0.3 10 4 Collector current IC Common emitter VCC = 300 V VGG = ±15 V IC = 20 A : Tc = 25°C : Tc = 125°C 10 0 (Ω) 0.5 0.03 3 Switching loss RG 0.01 1000 Eon, Eoff (mJ) Switching time toff, tf (μs) 3 300 Switching time toff, tf (μs) 0.03 3 ton, tr – IC Common emitter VCC = 300 V VGG = ±15 V RG = 56 Ω : Tc = 25°C : Tc = 125°C ton (μs) 1 ton, tr – RG Common emitter VCC = 300 V VGG = ±15 V IC = 20 A : Tc = 25°C : Tc = 125°C Switching time ton, tr Switching time ton, tr (μs) 3 1 (Ω) Eon 0.3 Eoff 0.1 0.03 0.01 1000 Eon, Eoff – IC Common emitter VCC = 300 V VGG = ±15 V RG = 56 Ω : Tc = 25°C : Tc = 125°C Note2 3 0 4 8 12 Collector current IC 4 20 16 (A) 16 20 (A) 2006-11-01 GT20J101 C – VCE VCE, VGE – QG 5000 500 3000 100 Coes 30 Common emitter 10 VGE = 0 f = 1 MHz 5 0.5 Cres Tc = 25°C 1 3 10 30 100 Collector-emitter voltage 300 1000 RL = 15 Ω Tc = 25°C 300 IC max (pulsed)* 4 100 20 VCE (V) 60 0 100 80 Reverse bias SOA 50 50 μs* 30 (A) 100 μs* IC max 10 (continuous) Collector current IC (A) 40 Gate charge QG (nC) 10 ms* 30 Collector current IC 8 100 50 1 ms* 5 DC operation 3 200 VCE = 100 V 200 Safe operating area 100 12 300 0 0 3000 16 VGE (V) 400 Gate-emitter voltage 300 Collector-emitter voltage (pF) VCE (V) Cies 1000 Capacitance C 20 Common emitter 1 0.5 *: Single nonrepetitive pulse Tc = 25°C 0.3 Curves must be derated linearly with increase in temperature. 0.1 1 3 10 30 10 5 3 1 0.5 Tj < = 125°C 0.3 VGE = ±15 V 0.1 100 Collector-emitter voltage 300 1000 3000 RG = 56 Ω 1 3 10 30 100 Collector-emitter voltage VCE (V) 300 1000 3000 VCE (V) Rth (t) – tw Transient thermal impedance Rth (t) (°C/W) 10 10 10 10 10 10 10 2 1 0 −1 −2 −3 −4 10 Tc = 25°C −5 10 −4 10 −3 10 −2 Pulse width 10 −1 tw 10 0 10 1 10 2 (s) 5 2006-11-01 GT20J101 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. 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Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-01