SSM5N15FU

SSM5N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N15FU High Speed Switching Applications Analog Switch Applications • • Small package Low ON resistance : RDS (ON) = 4.0 Ω (max) (@VGS = 4 V) : RDS (ON) = 7.0 Ω (max) (@VGS = 2.5 V) Unit: mm (Q1, Q2 Common) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 ±20 100 200 200 150 −55 to 150 Unit V V mA mW °C °C 1: Gate1 2: Source 3: Gate2 4: Drain2 5: Drain1 JEDEC JEITA ― ― Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Note: Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2L1B high temperature/current/voltage and the significant change in Weight: 6 mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, Marking Equivalent Circuit (top view) 5 4 5 4 DP 1 2 3 Q1 Q2 1 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2008-12-11 SSM5N15FU Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ⎪Yfs⎪ RDS (ON) Ciss Crss Coss ton toff VDD = 5 V, ID = 10 mA, VGS = 0 to 5 V VDS = 3 V, VGS = 0, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 30 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 4 V ID = 10 mA, VGS = 2.5 V Min ⎯ 30 ⎯ 0.8 25 ⎯ ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ 2.2 4.0 7.8 3.6 8.8 50 180 Max ±1 ⎯ 1 1.5 ⎯ 4.0 7.0 ⎯ ⎯ Unit μA V μA V mS Ω pF pF pF ns ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Switching Time Test Circuit (a) Test circuit 5V 0 10 μs VDD = 5 V Duty ≤ 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C OUT IN 50 Ω RL 0V 10% (b) VIN 5V 90% VDD (c) VOUT VDD 10% 90% tr ton tf toff VDS (ON) Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 2 2008-12-11 SSM5N15FU (Q1, Q2 common) ID – VDS 250 Common Source 200 10 4 3 Ta = 25°C 100 1000 Common Source VDS = 3 V Ta = 100°C 10 25°C 1 −25°C ID – VGS Drain current ID (mA) 2.7 150 2.5 100 2.3 50 VGS = 2.1 V 0 0 0.5 1 1.5 2 Drain current ID (mA) 0.1 0.01 0 1 2 3 4 Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) RDS (ON) – ID 10 Common Source Ta = 25°C 6 RDS (ON) – VGS Common Source 5 ID = 10 mA Drain-Source ON resistance RDS (ON) (Ω) Drain-Source on resistance RDS (ON) (Ω) 8 4 Ta = 100°C 25°C 2 −25°C 1 6 VGS = 2.5 V 3 4 4V 2 0 0 40 80 120 160 200 0 0 2 4 6 8 10 Drain current ID (mA) Gate-Source voltage VGS (V) RDS (ON) – Ta 8 7 Common Source ID = 10 mA 2 1.8 Common Source ID = 0.1 mA VDS = 3 V Vth – Ta Vth (V) Gate threshold voltage 75 100 125 150 VGS = 2.5 V 4V 0 25 50 Drain-Source on resistance RDS (ON) (Ω) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −25 6 5 4 3 2 1 0 −25 0 25 50 75 100 125 150 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 3 2008-12-11 SSM5N15FU (Q1, Q2 common) ⎪Yfs⎪ – ID 1000 Common Source 500 V DS = 3 V 300 Ta = 25°C 250 Common Source VGS = 0 V Ta = 25°C D 150 IDR S 100 IDR – VDS (mA) Drain reverse current IDR Forward transfer admittance ⏐Yfs⏐ (mS) 200 100 50 30 G 10 5 3 50 1 0 10 100 1000 0 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4 Drain current ID (mA) Drain-Source voltage VDS (V) t – ID 10000 5000 3000 toff 1000 500 300 tf Common Source VDD = 5 V VGS = 0 to 5 V Ta = 25°C 10000 5000 3000 t – ID Common Source VDD = 3 V VGS = 0 to 2.5 V Ta = 25°C toff 1000 500 300 ton 100 50 30 tr tf Switching time t (ns) 100 50 30 ton tr 10 0.1 Switching time t (ns) 1 10 100 10 0.1 1 10 100 Drain current ID (mA) Drain current ID (mA) C – VDS 100 50 30 Common Source VGS = 0 V f = 1 MHz Ta = 25°C 250 PD* – Ta (mW) Drain power dissipation PD* 100 200 (pF) 10 5 3 Ciss Coss Crss 1 0.5 0.3 Capacitance C 150 100 50 0.1 0.1 1 10 0 0 20 40 60 80 100 120 140 160 Drain-Source voltage VDS (V) *: Total rating Ambient temperature Ta (°C) 4 2008-12-11 SSM5N15FU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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