SSM6N24TU,LF

SSM6N24TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6N24TU High Speed Switching Applications Unit: mm • Low on-resistance: 2.1±0.1 Ron = 145mΩ (max) (@VGS = 4.5 V) 1.7±0.1 Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ± 12 V DC ID 0.5 Pulse IDP 1.5 PD (Note 1) 500 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current Drain power dissipation A 0.65 0.65 Characteristics 1.3±0.1 Absolute Maximum Ratings (Ta = 25°C) 1 6 2 5 3 4 0.7±0.05 2.0±0.1 Ron = 180mΩ (max) (@VGS = 2.5 V) 1.Source1 2.Gate1 3.Drain2 +0.1 0.3-0.05 Optimum for high-density mounting in small packages +0.06 0.16-0.05 • 4.Source2 5.Gate2 6.Drain1 UF6 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.) may cause this product to decrease in the JEITA ― reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the TOSHIBA 2-2T1B absolute maximum ratings. Weight: 7.0 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: Note 1: Mounted on FR4 board. (total dissipation) 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Marking 6 Equivalent Circuit (top view) 5 4 2 5 4 Q1 NF 1 6 Q2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2004-01 1 2014-03-01 SSM6N24TU Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current Min Typ. Max Unit VGS = ± 12 V, VDS = 0 ⎯ ⎯ ±1 μA V (BR) DSS ID = 1 mA, VGS = 0 30 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = −12 V 18 ⎯ ⎯ IGSS Drain-Source breakdown voltage Test Condition V VDS = 30 V, VGS = 0 ⎯ ⎯ 1 μA Vth VDS = 3 V, ID = 0.1 mA 0.5 ⎯ 1.1 V Forward transfer admittance ⏐Yfs⏐ VDS = 3 V, ID = 0.25 A (Note2) 1.0 2.0 ⎯ S Drain-Source on-resistance RDS (ON) ID = 0.50 A, VGS = 4.5 V (Note2) ⎯ 120 145 ID = 0.25 A, VGS = 2.5 V (Note2) ⎯ 140 180 Drain cut-off current IDSS Gate threshold voltage mΩ Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 245 ⎯ pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 33 ⎯ pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 41 ⎯ pF Switching time Turn-on time ton VDD = 10 V, ID = 0.25 A, ⎯ 9 ⎯ Turn-off time toff VGS = 0~2.5 V, RG = 4.7 Ω ⎯ 15 ⎯ ns Note2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 90% IN 0V RG 0 10 μs VDD (c) VOUT VDD = 10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 10% VDD VDS (ON) 10% 90% tr ton tf toff Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID=100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration when using the device. 2 2014-03-01 SSM6N24TU ID - VGS ID - VDS 1600 10000 1.8 1.6 2.0 3.0 4.0 5.0 1200 1000 1000 Drain current ID (mA) Drain current ID (mA) 1400 VGS=1.4V 800 600 400 Ta=100°C 10 25°C 1 -25°C 0.1 Common Source Ta=25°C 200 Common Source VDS=3V 0.01 0 0 0.2 0.4 0.6 0.8 Drain-Source voltage VDS (V) 1 0 RDS(ON) - ID 200 Drain-Source on-resistance RDS(ON) (mΩ) 2.5V 120 VGS=4.5V 100 80 60 40 300 250 200 0 200 100 Ta=100°C -25°C 0 400 600 800 1000 1200 1400 1600 Drain current ID (mA) RDS(ON) - Ta 400 1 Common Source Gate threshold voltage Vth(V) Drain-Source on-resistance RDS(ON) (mΩ) 25°C 150 0 0 300 250 2.5V,250mA 200 150 100 Common Source ID=500mA 50 20 350 3 RDS(ON) - VGS 350 160 140 1 2 Gate-Source voltage VGS (V) 400 Common Source Ta=25°C 180 Drain-Source on-resistance RDS(ON) (mΩ) 100 VGS=4.5V,ID=500mA 0.8 1 2 3 4 5 6 7 8 Gate-Source voltage VGS (V) 9 10 Vth - Ta Common Source ID=0.1mA VDS=3V 0.6 0.4 0.2 50 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 3 2014-03-01 SSM6N24TU |Yfs| - ID 25°C -25°C 1 IDR - VDS 1600 Drain reverse current IDR (mA) Forward transfer admittance |Yfs| (S) 10 Ta=100°C Common Source VDS=3V Ta=25°C Common Source VGS=0V Ta=25°C 1400 1200 D 1000 IDR G 800 S 600 400 200 0 0 10 100 1000 10000 0 Drain current ID (mA) C - VDS 1000 -0.2 -0.4 -0.6 -0.8 Drain-Source voltage VDS (V) t - ID 1000 Switching time t (ns) Capacitance C (pF) Common Source VGS=0V f=1MHz Ta=25°C Ciss 100 -1 Common Source VDD=10V VGS=0~2.5V Ta=25°C 100 toff tf 10 ton Coss Crss tr 10 1 0.1 1 10 Drain-Source voltage VDS (V) 100 10 100 1000 Drain current ID (mA) 10000 PD* - Ta Drain power dissipation PD* (mW) 1000 t=10s 800 600 mounted FR4 board (25.4mm*25.4mm*1.6t Cu Pad :645mm2) DC 400 200 0 0 20 *:Total Rating 40 60 80 100 120 140 Ambient temperature Ta( ℃) 160 4 2014-03-01 SSM6N24TU Transient thermal impedance rth (°C/W ) rth – tw 1000 Single pulse Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) 100 10 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) 5 2014-03-01 SSM6N24TU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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