TB6549PG

TB6549F/FG/P/PG/HQ Toshiba Bi-CMOS Integrated Circuit Silicon Monolithic TB6549F/FG, TB6549P/PG, TB6549HQ Full-Bridge Driver IC for DC Motors The TB6549F/FG/P/PG/HQ is a full-bridge driver IC for DC motors that uses an LDMOS structure for output transistors. High-efficiency drive is possible through the use of a MOS process with low ON-resistance and a PWM drive system. Four modes, CW, CCW, short brake, and stop, can be selected using IN1 and IN2. TB6549F/FG Features • • • • • • • • • Power supply voltage: 30 V (max) Output current: 3.5 A (max) (F/FG,P/PG type) / 4.5 A (max.) (HQ type) Low ON-resistance: 0.5 Ω (typ.) PWM control capability Standby system Function modes: CW/CCW/short brake/stop Built-in overcurrent protection Built-in thermal shutdown circuit Package: HSOP-20/DIP-16 TB6549HQ TB6549P/PG HZIP-25-1.00F TB6549FG/PG/HQ: The TB6549FG/PG is a Pb-free product. The TB6549HQ is a Sn-Ag plated product including Pb. The following conditions apply to solderability: *Solderability 1. Use of Sn-37Pb solder bath *solder bath temperature = 230ºC *dipping time = 5 seconds *number of times = once *use of R-type flux 2. Use of Sn-3.0Ag-0.5Cu solder bath *solder bath temperature = 245ºC *dipping time = 5 seconds *number of times = once *use of R-type flux Weight HSOP20-P-450-1.00: 0.79 g (typ.) DIP16-P-300-2.54A: 1.11 g (typ.) HZIP-25-1.00F: 7.7g (typ.) 1 2007-3-6 TB6549F/FG/P/PG/HQ Pin Assignment HSOP20-P-450-1.00 N.C. CcpA CcpB CcpC N.C. S-GND (Fin) N.C. IN1 IN2 N.C. OUT1 VCC N.C. Vreg SB N.C. S-GND (Fin) N.C. PWM N.C. OUT2 P-GND IN2 OUT1 OUT2 P-GND S-GND S-GND IN1 S-GND S-GND PWM CcpA CcpB CcpC DIP16-P-300-2.54A VCC Vreg SB Note: This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product, ensure that the environment is protected against electrostatic discharge by using an earth strap, a conductive mat and an ionizer. Ensure also that the ambient temperature and relative humidity are maintained at reasonable levels. 2 2007-3-6 TB6549F/FG/P/PG/HQ Block Diagram Vreg SB PWM OUT2 VCC OUT1 5V Control logic OSC Overcurrent detecting circuit TSD Charge pump circuit CcpA CcpB CcpC IN1 IN2 S-GND P-GND Pin Functions Pin No. Pin Name F/FG 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 FIN P/PG ⎯ 1 2 3 ⎯ ⎯ 6 7 ⎯ 8 9 10 ⎯ 11 ⎯ ⎯ 14 15 ⎯ 16 4, 5, 12, 13 HQ ⎯ 14 15 16 (NC) CcpA CcpB CcpC (NC) (NC) IN1 IN2 (NC) OUT1 P-GND OUT2 (NC) PWM (NC) (NC) SB Vreg (NC) VCC S-GND No Connection ⎯ Functional Description Remarks Capacitor connection pin for charge pump A Connect a capacitor for charge pump Capacitor connection pin for charge pump B Connect a capacitor for charge pump Capacitor connection pin for charge pump C Connect a capacitor for charge pump No Connection No Connection Control signal input 1 Control signal input 2 No Connection Output pin 1 Power GND Output pin 2 No Connection PWM control signal input pin No Connection No Connection Standby pin 5 V output pin No Connection Power supply input pin GND pin VCC (ope) = 10 to 27 V ⎯ H: Start, L: Standby Connect a capacitor to S-GND ⎯ Input 0/5-V signal Input 0/5-V signal ⎯ Connect to motor coil pin ⎯ Connect to motor coil pin ⎯ Input 0/5-V PWM signal ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 23 24 ⎯ 25 1 2,5 ⎯ 3 ⎯ ⎯ 10 11 ⎯ 12 7,16 *) (HQ type) 4, 6, 8, 9, 13, 17, 18, 20, 21, 22 ;N.C. 3 2007-3-6 TB6549F/FG/P/PG/HQ Absolute Maximum Ratings (Ta = 25°C) Characteristic Supply voltage Symbol VCC IO (ﾊﾟﾙｽ) Output current IO (DC) Input voltage F/FG Power dissipation P/PG HQ PD Vin F, P HQ F, P HQ Rating 30 3.5 4.5 2.0 3.5 -0.3∼5.5 2.5 2.7 3.2 40 Operating temperature Storage temperature Topr Tstg −20~85 −55~150 (Note3) (Note4) W (Note5) (Note6) °C °C V (Note1) (Note2 ) A Unit V Note1: Note2: The absolute maximum ratings must be observed strictly. Make sure that no characteristic listed above ever exceeds the absolute maximum rating. t=100ms Note3: This value is obtained for a 115 × 75 × 1.6 mm PCB mounting with 30% copper area. Note4: Note5: Note6: This value is obtained for a 50 × 50 × 1.6 mm PCB mounting with 50% copper area. IC only. Infinite heat sink. Operating Range (Ta = 25°C) Characteristic Supply voltage PWM frequency Symbol VCC fCLK Rating 10 to 27 100 Unit V kHz 4 2007-3-6 TB6549F/FG/P/PG/HQ Electrical Characteristics (VCC = 24 V, Ta = 25°C) Characteristic Symbol ICC1 Supply current ICC2 ICC3 ICC4 Input voltage Hysteresis voltage Input current VINH VINL Control circuit VIN (HYS) IINH IINL Input voltage Hysteresis voltage PWM input circuit Input current PWM frequency Minimum clock pulse width Input voltage Hysteresis voltage Input current VPWMH VPWML 3 ⎯ ⎯ (Not tested) VIN = 5 V VIN = 0 V 2 1 Test Circuit Test Condition Stop mode CW/CCW mode Short break mode (Standby mode) Min ⎯ ⎯ ⎯ ⎯ 2 ⎯ ⎯ ⎯ ⎯ 2 ⎯ (Not tested) VPWM = 5 V VPWM = 0 V Duty = 50% 3 tw(PWM) VINSH VINSL Standby circuit VIN (HYS) IINSH IINSL Output ON-resistance Ron (U + L) IL (U) IL (L) Diode forward voltage Internal reference voltage Overcurrent detection offset time Charge pump rising time Thermal shutdown circuit operating temperature VF (U) VF (L) Vreg ISD (OFF) tONG TSD 4 ⎯ 7 ⎯ 6 4 ⎯ (Not tested) VIN = 5 V VIN = 0 V Io = 0.2 A Io = 1.5 A VCC = 30 V VCC = 30 V Io = 1.5 A Io = 1.5 A No load (Not tested) C1 = 0.22 μF, C2 = 0.01 μF (Note 2) (Not tested) 4.5 ⎯ ⎯ ⎯ (Note 1) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2 2 2 ⎯ ⎯ ⎯ ⎯ ⎯ Typ. 4 6 4 1 ⎯ ⎯ 0.2 50 ⎯ ⎯ ⎯ 0.2 50 ⎯ ⎯ ⎯ ⎯ ⎯ 0.2 50 ⎯ 1.0 1.0 ⎯ ⎯ 1.3 1.3 5 50 1 160 Max 8 10 8 2 5.5 0.8 ⎯ 75 5 5.5 0.8 ⎯ 75 5 100 ⎯ 5.5 0.8 ⎯ 75 5 1.75 1.75 150 10 1.7 V 1.7 5.5 ⎯ 3 ⎯ V μs ms °C μA Ω μA V kHz μs μA V μA V mA Unit 1 VPWM(HYS) IPWMH IPWML 3 fPWM 1 Output leakage current 5 Note 1: Include the current in the circuit. Note 2: C1 is a capacitor between CcpA and GND. C2 is a capacitor between CcpB and CcpC. 5 2007-3-6 TB6549F/FG/P/PG/HQ Component Description 1. Control Input/PWM Input Circuit VDD IN1 (IN2, PWM) 100 kΩ VDD • The input signals are shown below. Input at the CMOS and TTL levels can be provided. Note that the input signals have a hysteresis of 0.2 V (typ.). VINH: 2 to Vreg V VINL: GND to 0.8 V The PWM input frequency should be 100 kHz or less. • Input/Output Function Input IN1 H IN2 H SB H PWM H L H L H H L H H L H L H L L H L H H/L H/L L L L L Short brake Stop OFF (high impedance) OFF (high impedance) L H L L Short brake CCW/CW L H CW/CCW OUT1 L OUT2 L Output Mode Short brake Standby • PWM control function Motor speed can be controlled by inputting the 0/5-V PWM signal to the PWM pin. When PWM control is provided, normal operation and short brake operation are repeated. If the upper and lower power transistors in the output circuit were ON at the same time, a penetrating current would be produced. To prevent this current from being produced, a dead time of 300 ns (design target value) is provided in the IC when either of the transistors changes from ON to OFF, or vice versa. Therefore, PWM control by synchronous rectification is enabled without an OFF time being inserted by external input. Note that a dead time is also provided in the IC at the time of transition between CW and CCW or between CW (CCW) and short brake mode, thereby eliminating the need for an OFF time. 6 2007-3-6 TB6549F/FG/P/PG/HQ VCC VCC VCC OUT1 M OUT1 M OUT1 M GND PWM ON t1 PWM ON → OFF t2 = 300 ns (typ.) VCC GND PWM OFF t3 VCC GND OUT1 M OUT1 M GND PWM OFF → ON t4 = 300 ns (typ.) PWM ON t5 VCC Output Voltage Waveform (OUT1) t1 t3 t5 GND GND t2 t4 Note: Be sure to set the pin PWM to High when the PWM control function is not used. 2. Standby Circuit VDD VDD SB 100 kΩ • • All circuits are turned off except the standby circuit and the charge pump circuit under the standby condition. The input voltage range is shown below. Input at CMOS and TTL level is possible. The input signal has 0.2 V (typ.) hysteresis. VINSH: 2 to Vreg V VINSL: GND to 0.8 V Do not attempt to the control the output by inputting PWM signals to the standby pin. Doing so may cause the output signal to become unstable, resulting in destruction of the IC. The charge pump circuit is turned ON/OFF by the switch of the input signal from the standby pin. If the switching cycle is shorter than 50 ms, the charge pump circuit will not operate with precise timing. Therefore the switching cycle of the standby pin should be longer than 50 ms. When the Standby condition is changed to Operation Mode, set IN1 and IN2 to Low level (Stop Mode) at first. Then switch IN1 and IN2 to High level when the charge pump circuit reaches the stable condition, i.e., when VcpA is about VCC + 5 V. • • • 7 2007-3-6 TB6549F/FG/P/PG/HQ 3. Internal Constant-Voltage (5 V) Circuit VCC VCC Vreg • • • This IC includes a 5 V power supply for control circuit. A capacitor for prevention of oscillation should be connected to S-GND associated with the pin Vreg. No other loads should be connected to pin Vreg. This IC has a power monitoring function and turns the output OFF when Vreg goes down to 3.0 V (design target value) or less. With a hysteresis of 0.3 V (design target value), the output are turned ON when Vreg again reaches 3.3 V (design target value). 4. Charge Pump Circuit VCC CcpA CcpB CcpC • This IC has a charge pump circuit for driving the gate for the upper power transistor in the output circuit. A voltage of VCC + 5 V (typ.) is generated by connecting an external capacitor to this IC. It takes about 2 ms to boost VCPA up VCC + 5 V (typ.) after the switching of the input signal from the standby pin (while CcpA = 0.22 μF, and CcpB and CcpC are connected through 0.01 μF). The proper capacitance of the external capacitor varies depending on the VCC value. Thus, determine the constant by referring to the following data. The value of the capacitor between CcpB and CcpC should be such that, while the motor is being driven, the voltage on the CcpA pin will be kept constant, typically at VCC + 5 V. (If a reduced VCC level causes the voltage on CcpA to start to fall, please adjust this capacitance value accordingly.) VCC 10 V~15 V 15 V~27 V Between CcpB and CcpC 0.01 μF~0.047 μF 0.01 μF Between CcpA and GND 0.22 μF 0.22 μF • • Reference oscillation is performed by using the internal capacitor. 8 2007-3-6 TB6549F/FG/P/PG/HQ 5. Output Circuit VCC OUT1 (OUT2) P-GND • • • This IC uses Nch MOS transistors as the upper and lower transistors in the output circuit. As output Ron is 1 Ω (sum for the upper and lower parts/typ.), this IC is a device of the low-Ron type. The switching characteristics of the output transistors are shown below. PWM Input tpLH tpHL 90 ％ 90％ 50 ％ 10％ Output Voltage (OUT1/OUT2) 10％ 50 ％ tr tf Item tpLH tpHL tr tf Typical Value 350 800 60 100 ns Unit tpLH (350 ns) PWM input tpLH (800 ns) Output voltage tr (60 ns) tf (100 ns) *: OUT 1, OUT 2; open 9 2007-3-6 TB6549F/FG/P/PG/HQ 6. VCC Power Supply Section • • • The VCC power supply delivers a voltage to the output circuit, charge pump circuit, and internal 5 V circuit. The operating voltage range is shown below: VCC (opr.) = 10 to 27 V This IC has a power monitoring function for preventing an output malfunction on power-up. However, Toshiba recommends that IN1, IN2, and SB be set to the Low level at power-on. 7. GND Sections • This IC includes two separate GND sections: S-GND for controlling and P-GND for outputting. Be sure to short-circuit these two GNDs as close to TB6549 as possible. 8. Power Monitoring Circuit • • This circuit turns the output OFF when Vreg becomes 3.0 V (design target value) or less. At this time, VCC = 4.6 V (typ.). With a hysteresis of 0.3 V (design target value), the output turns back ON when Vreg exceeds 3.3 V (design target value) after this circuit starts operating. 9. Thermal Shutdown (TSD) Circuit This IC includes a thermal shutdown circuit, which turns the output OFF when the junction temperature (Tj) exceeds 160°C (typ.). The output turns back ON automatically. The thermal hysteresis is 20°C. TSD = 160°C (design target value) ΔTSD = 20°C (design target value) 10. Overcurrent Detection (ISD) Circuit This IC includes a circuit to detect current flowing through the output power transistors. The current limit is set to 5 A (typ.). The circuit detects a current flowing through each of the four output power transistors. If the current in any one output power transistor exceeds the set limit, this circuit turns all the outputs OFF. This circuit includes a timer that causes the outputs to be OFF for 50 μs (typ.) after detection of an overcurrent and then turn back ON automatically. If the overcurrent continues to flow, this ON-OFF operation is repeated. Note that to prevent a malfunction due to a glitch, an insensitive period of 10 μs (typ.) is provided. ILIM Output Current 0 50 μs (typ.) 10 μs (typ.) Insensitive period 10 μs (typ.) 50 μs (typ.) The set limit is 5 A (typ.) as a design target value. The distributions shown below exist because of the variations in thermal characteristics of different ICs. These distributions should be fully considered in the motor torque design. Also, output peak current should be less than 3 A because of the variations below, Detected current: Approximately from 3.5 to 6.5 A 10 2007-3-6 TB6549F/FG/P/PG/HQ Test Circuit 1. Icc1, Icc2, Icc3, Icc4, IINH, IINL, IINSH, IINSL A ICC 24V CcpA CcpB CcpC 5V PWM Vreg VCC OUT1 5V/0V A IIN 5V/0V A IIN 5V/0V A IINS SB S-GND P-GND IN2 IN1 TB6549F/FG/P/PG/HQ TB6549F/P OUT2 • • • • • • • • Icc1: IN1 = 0 V, IN2 = 0 V, SB = 5 V Icc2: IN1 = 5 V, IN2 = 5 V, SB = 5 V or IN1 = 0 V, IN2 = 5 V, SB = 5 V Icc3: IN1 = 5 V, IN2 = 5 V, SB = 5 V Icc4: IN1 = 5 V/0 V, IN2 = 5 V/0 V, SB = 0 V IINH: IN1 = 5 V, and IN2 = 5 V IINL: IN2 = 0 V, and IN2 = 0 V IINSH: SB = 5 V IINSL: SB = 0 V 2. VINH, VINL, VINSH, VINSL 24V CcpA CcpB CcpC 5V PWM Vreg VCC OUT1 2V/0.8V IN1 TB6549F/P TB6549F/FG/P/PG/HQ 0.8V/2V IN2 OUT2 V 2V/0.8V SB S-GND P-GND V • • • VINH, VINSH: IN1 = IN2 = SB = 2 V. Verify that OUT1 = OUT2 = L. VINL: IN1 = 0.8 V, IN2 = SB = 2 V. Verify that OUT1 = L, OUT2 = H. IN1 = SB = 2 V, IN2 = 0.8 V. Verify that OUT1 = OUT2 = L. VINSL: IN1 = IN2 = 2 V, SB = 0.8 V. Verify that the output function is high impedance. 11 2007-3-6 TB6549F/FG/P/PG/HQ 3. VPWMH, VPWML, IPWMH, IPWML, fPWM, tw (PWM) 24V CcpA CcpB CcpC 5V/0V 2V/0.8V 100kHz 5V 0V A IPWM PWM Vreg VCC IN1 OUT1 TB6549F/FG/P/PG/HQ TB6549F/P IN2 OUT2 V 5V SB S-GND P-GND V • • • VPWMH, VPWML, fPWM: PWM = 2 V/0.8 V, 100 kHz; duty: 50 % (rectangular wave). Verify OUT1. VPWMH, VPWML: PWM = 5 V or PWM = 0 V. tw(PWM): PWM = 2 V/0.8 V, 100 kHz; duty: 20 % (2 μs) (2 μs/rectangular wave). Verify OUT1. 4. Ron (H + L), Vreg 24V → IO V CcpA CcpB CcpC 5V PWM OUT1 5V/0V IN1 Vreg VCC V TB6549F/FG/P/PG/HQ TB6549F/FG/P/PG TB6549F/P OUT2 V ↓ IO 0V/5V IN2 5V SB S-GND P-GND • • Ron (H + L): Measure Vds (the sum of upper and lower sides) at IO = 0.2 A, and convert to resistor. Do the same at IO = 1.5 A. Vreg: Vreg pin voltage. 12 2007-3-6 TB6549F/FG/P/PG/HQ 5. IL (U), IL (L) 30V A IL(L) CcpA CcpB CcpC 5V PWM Vreg VCC OUT1 0V IN1 TB6549F/FG/P/PG/HQ TB6549F/P TB6549F/FG/P/PG 0V IN2 OUT2 A 5V SB S-GND P-GND IL(H) 6. VF (U), VF (L) 24V → VF(H) CcpA CcpB CcpC 5V PWM OUT1 0V IN1 Vreg VCC V IO V TB6549F/FG/P/PG/HQ TB6549F/P TB6549F/FG/P/PG 0V IN2 OUT2 ↓ IO V VF(L) 5V SB S-GND P-GND • VF (U), VF (L): IO = 1.5 A. 13 2007-3-6 TB6549F/FG/P/PG/HQ 7. tONG 24V V CcpA CcpB CcpC 5V PWM Vreg VCC OUT1 0V IN1 TB6549F/P TB6549F/FG/P/PG TB6549F/FG/P/PG/HQ 0V 0V → 5V IN2 OUT2 SB S-GND P-GND • tONG: SB = 0 V → 5 V. Measure the time taken to boost the CcpA voltage up to about 29 V (24 V + 5 V). 14 2007-3-6 TB6549F/FG/P/PG/HQ PD – Ta (TB6549P/PG) 3.0 (1) When mounted on a PCB (50 × 50 × 1.6 mm glass-epoxy PCB mounting with 50% copper area) (2) IC only PD – Ta (TB6549F/FG) Maximum power dissipation PD MAX (W) Thermal resistance 6 Rth (j-c) = 13°C/W Rth (j-a) = 130°C/W Note: 50 × 50 × 1 mm Fe heat sink 4 Infinite heat sink (Note) 2 No heat sink 3 (1) Power dissipation PD (W) 2.4 1.8 (2) 1.2 0.6 0 0 40 80 120 160 200 240 0 0 50 100 150 200 Ambient temperature Ta (°C) Ambient temperature Ta (°C) PD 80 – Ta（TB6549HQ） ① Infinite heat sink Rθj-c = 1°C/W ② HEAT SINK (RθHS = 3.5°C/W) Rθj-c + RθHS = 4.5°C/W ③ IC only Rθj-a = 39°C/W (W) Power dissipation PD 60 40 ① ② 20 ③ 0 0 25 50 75 100 125 150 Ambient temperature Ta (°C) External Attachments Symbol C1 C2 C3 C4 C5 Charge pump Charge pump Prevention of Vreg oscillation Absorption of power noise Absorption of power noise Use Recommended Value 0.22 μF 0.01 μF 0.033 μF 0.1 μF to 1.0 μF 0.001 μF to 1 μF 50 μF to 100 μF Remarks ⎯ VCC = 24 V (Note) VCC = 12 V (Note) ⎯ ⎯ ⎯ Note: The recommended values for charge pumps depend on the VCC value. Refer to Component Description 4, Charge Pump Circuit. 15 2007-3-6 TB6549F/FG/P/PG/HQ Typical Application Diagram C2 5V C1 2/1 3/2 4/3 Note 4 C3 C4 Note 1 C5 24V 18/15 20/16 VDD PWM PORT1 PORT2 PORT3 GND 14/11 CcpA CcpB CcpC PWM IN1 IN2 SB S-GND FIN/4,5,12,13 Vreg VCC 7/6 OUT1 10/8 TB6549F/FG/P/PG/HQ TB6549F/P OUT2 12/10 M Note 2 8/7 17/14 P-GND 11/9 Note 5 Microcontroller Note 3 TB6549F/TB6549P TB6549F/FG/P/PG/HQ TB6549F/FG: Pins 1, 5, 6, 9, 13, 15, 16, and 19 are not connected. TB6549HQ: Pins 4, 6, 8, 9, 13, 17, 18, 20, 21, 22 are not connected. Note 1: Connect VCC and P-GND through the power supply capacitor. This capacitor should be as close as possible to the IC. Note 2: When connecting the motor pins through the capacitor for reducing noise, connect a resistor to the capacitor for limiting the charge current. The switching loss increases for PWM control. Therefore, whenever practicable, avoid connecting the capacitor if PWM control is required. Note 3: Short-circuit S-GND and P-GND as close to the TB6549 as possible. Note 4: Connect the capacitor C3 to S-GND. Note 5: Connect the capacitors C1 and C2 as close to the TB6549 as possible, and the capacitor C1 as close to S-GND. Note 6: Pins 4, 5, 12, and 13 of the P/PG type are connected to the bed of the chip. Therefore expanding the round area of these pins improves the heat radiation effect. Note 7: Pins 2 and 5 of HQ type must be shorted outside. Usage Precautions ・Utmost care is necessary in the design of the output, VCC, VM, and GND lines since the IC may be destroyed by short-circuiting between outputs, air contamination faults, or faults due to improper grounding, or by short-circuiting between contiguous pins. ・Be sure to install the IC correctly. The IC may be destroyed if installed wrongly (e.g., in reverse). 16 2007-3-6 TB6549F/FG/P/PG/HQ Package Dimensions Weight: 0.79 g (typ.) 17 2007-3-6 TB6549F/FG/P/PG/HQ Package Dimensions Weight: 1.11 g (typ.) 18 2007-3-6 TB6549F/FG/P/PG/HQ Package Dimensions HZIP-25-1.00F Weight: 7.7 g (typ.) 19 2007-3-6 TB6549F/FG/P/PG/HQ Notes on Contents 1. Block Diagrams Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for explanatory purposes. The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. Timing charts may be simplified for explanatory purposes. The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass production design stage. Toshiba does not grant any license to any industrial property rights by providing these examples of application circuits. Components in the test circuits are used only to obtain and confirm the device characteristics. These components and circuits are not guaranteed to prevent malfunction or failure from occurring in the application equipment. 2. Equivalent Circuits 3. Timing Charts 4. Application Circuits 5. Test Circuits IC Usage Considerations Notes on handling of ICs [1] The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. [2] Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case of over current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required. [3] If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or ignition. Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition. [4] Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negative terminals of power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute maximum rating, and exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. In addition, do not use any device that is applied the current with inserting in the wrong orientation or incorrectly even just one time. 20 2007-3-6 TB6549F/FG/P/PG/HQ Points to remember on handling of ICs (1) Over current Protection Circuit Over current protection circuits (referred to as current limiter circuits) do not necessarily protect ICs under all circumstances. If the Over current protection circuits operate against the over current, clear the over current status immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the over current protection circuit to not operate properly or IC breakdown before operation. In addition, depending on the method of use and usage conditions, if over current continues to flow for a long time after operation, the IC may generate heat resulting in breakdown. (2) Thermal Shutdown Circuit Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the thermal shutdown circuits operate against the over temperature, clear the heat generation status immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the thermal shutdown circuit to not operate properly or IC breakdown before operation. (3) Heat Radiation Design In using an IC with large current flow such as power amp, regulator or driver, please design the device so that heat is appropriately radiated, not to exceed the specified junction temperature (TJ) at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, please design the device taking into considerate the effect of IC heat radiation with peripheral components. (4) Back-EMF When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to the motor’s power supply due to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power supply and output pins might be exposed to conditions beyond maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in system design. 21 2007-3-6 TB6549F/FG/P/PG/HQ RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 021023_D 070122EBA_R6 • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. 021023_A • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. 021023_B • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. 070122_C • Please use this product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 060819_AF • The products described in this document are subject to foreign exchange and foreign trade control laws. 060925_E 22 2007-3-6