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TC74HCT4053AFT

TC74HCT4053AFT

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    TC74HCT4053AFT - Triple 2-Channel Analog Multiplexer/Demultiplexer - Toshiba Semiconductor

  • 数据手册
  • 价格&库存
TC74HCT4053AFT 数据手册
TC74HCT4053AF/AFN/AFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HCT4053AF,TC74HCT4053AFN,TC74HCT4053AFT Triple 2-Channel Analog Multiplexer/Demultiplexer Note: The TC74HCT4053A are high speed CMOS ANALOG MULTIPLEXER/DEMULTIPLEXER fabricated with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. This device may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS. This inputs are compatible with TTL, NMOS and CMOS output voltage levels. The TC74HCT4053A has a 2 channel × 3 configuration. The digital signal to the control terminal turns “ON” the corresponding switch of each channel a large amplitude signal (VCC − VEE) can then be switched by the small logical amplitude (VCC − GND) control signal. For example, in the case of VCC = 5 V, GND = 0 V, VEE = −5 V, signals between −5 V and +5 V can be switched from the logical circuit with a single power supply of 5 V. As the ON-resistance of each switch is low, they can be connected to circuits with low input impedance. All inputs are equipped with protection circuits against static discharge or transient excess voltage. xxxFN (JEDEC SOP) is not available in Japan. TC74HCT4053AF TC74HCT4053AFN TC74HCT4053AFT Features • • • • • • • High speed: tpd = 30 ns (typ.) at VCC = 5 V VEE = 0 V Low power dissipation: ICC = 4 μA (max) at Ta = 25°C Compatible with TTL output: VIH = 2.0 V (min) VIL = 0.8 V (max) Wide interfacing ability: LSTTL, NMOS, CMOS Low ON resistance: RON = 50 Ω (typ.) at VCC − VEE = 9 V High noise immunity: THD = 0.02% (typ.) at VCC − VEE = 9 V Pin and function compatible with 4053B Weight SOP16-P-300-1.27A SOL16-P-150-1.27 TSSOP16-P-0044-0.65A : 0.18 g (typ.) : 0.13 g (typ.) : 0.06 g (typ.) Pin Assignment 1Y 0Y 1Z Z-COM 0Z INH VEE GND 1 2 3 4 5 6 7 8 (top view) 16 15 14 13 12 11 10 9 VCC Y-COM X-COM 1X 0X A B C 1 2007-10-01 TC74HCT4053AF/AFN/AFT Truth Table Control Inputs Inhibit L L L L L L L L H C L L L L H H H H X B L L H H L L H H X A L H L H L H L H X “ON” Channel HCT4053A 0X, 0Y, 0Z 1X, 0Y, 0Z 0X, 1Y, 0Z 1X, 1Y, 0Z 0X, 0Y, 1Z 1X, 0Y, 1Z 0X, 1Y, 1Z 1X, 1Y, 1Z NONE X: Don’t care System Diagram Y-COM X-COM A Logic Level Converter B C OUT C IN 0X 1X 0Y 1Y 0Z OUT INH C IN 1Z Z-COM IEC Logic Symbol INH A X-COM B Y-COM C Z-COM (6) (11) (14) (10) (15) (9) (4) MUXDMUX G2 2×0 2×1 0, 1 0 1 (12) (13) (2) (1) (5) (3) 0X 1X 0Y 1Y 0Z 1Z 2 2007-10-01 TC74HCT4053AF/AFN/AFT Absolute Maximum Ratings (Note) Characteristics Supply voltage range Supply voltage range Control input voltage Switch I/O voltage Control input diode current I/O diode current Switch through current DC VCC or ground current Power dissipation Storage temperature Symbol VCC VCC − VEE VIN VI/O IICK IIOK IT ICC PD Tstg Rating −0.5 to 13 −0.5 to 13 −0.5 to VCC + 0.5 VEE − 0.5 to VCC + 0.5 ±20 ±20 ±25 ±50 180 −65 to 150 Unit V V V V mA mA mA mA mW °C Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Operating Ranges (Note) Characteristics Supply voltage range Supply voltage range Supply voltage range Control input voltage Switch I/O voltage Operating temperature Control input rise and fall time Symbol VCC VEE VCC − VEE VIN VI/O Topr tr, tf Rating 4.5 to 12 −7.5 to 0 4.5 to 12 0 to VCC VEE to VCC −40 to 85 0 to 500 Unit V V V V V °C ns Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused control inputs must be tied to either VCC or GND. 3 2007-10-01 TC74HCT4053AF/AFN/AFT Electrical Characteristics DC Characteristics Characteristics High-level control input voltage Low-level control input voltage Symbol Test Condition VEE (V) VIHC VILC VIN = VILC or VIHC VI/O = VCC to VEE II/O ≤ 2 mA ON resistance RON VIN = VILC or VIHC VI/O = VCC or VEE II/O ≤ 2 mA Difference of ON resistance between switches Input/output leakage current (switch OFF) Switch input leakage current (switch ON) Control input current VIN = VILC or VIHC ΔRON VI/O = VCC to VEE II/O ≤ 2 mA VOS = VCC or GND IOFF VIS = GND or VCC VIN = VILC or VIHC IIZ IIN ICC Quiescent supply current IC VOS = VCC or GND VIN = VILC or VIHC VIN = VCC or GND VIN = VCC or GND Per input: VIN = 0.5 V or 2.4 V Other input: VCC or GND GND −4.5 −5.5 GND GND −4.5 −5.5 GND GND −4.5 −5.5 GND −5.5 GND −5.5 GND GND −5.5 VCC (V) 4.5 to 5.5 9.0 4.5 to 5.5 9.0 4.5 4.5 5.5 9.0 4.5 4.5 5.5 9.0 4.5 4.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 Min 2.0 2.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Ta = 25°C Typ. ⎯ ⎯ ⎯ ⎯ 85 55 50 55 70 50 45 50 10 5 5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ ⎯ 0.8 0.8 180 120 110 120 150 100 90 100 30 12 11 ±60 ±100 ±60 ±100 ±0.1 4.0 8.0 Ta = −40 to 85°C Min 2.0 2.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ ⎯ 0.8 0.8 225 150 140 150 190 125 115 125 35 15 14 ±600 ±1000 ±600 ±1000 ±1.0 40.0 80.0 nA Ω Ω V V Unit nA μA μA GND 5.5 ⎯ ⎯ 2.0 ⎯ 2.9 mA 4 2007-10-01 TC74HCT4053AF/AFN/AFT AC Characteristics (CL = 50 pF, Input tr = tf = 6 ns, GND = 0 V) Characteristics Symbol Test Condition VEE (V) VCC (V) Phase difference between input and output GND φI/O GND GND tpZL tpZH tpLZ tpHZ Cin CIS COS CIOS CPD (Note 2) GND (Note 1) GND GND GND (Note 1) GND GND ⎯ −5.0 −5.0 −5.0 GND 4.5 5.5 9.0 4.5 5.5 9.0 4.5 5.5 9.0 ⎯ 5.0 5.0 5.0 5.0 Min ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Ta = 25°C Typ. 6 5 4 33 26 17 45 37 26 5 11 7 0.75 67 Max 12 11 ⎯ 50 45 ⎯ 65 59 ⎯ 10 20 15 2 ⎯ Ta = −40 to 85°C Min ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max 15 14 ⎯ 63 57 ⎯ 81 73 ⎯ 10 20 15 2 ⎯ pF pF pF pF pF ns ns ns Unit Output enable time Output disable time Control input capacitance COMMON terminal capacitance SWITCH terminal capacitance Feedthrough capacitance Power dissipation capacitance Note 1 RL = 1 kΩ Note 2: CPD is defined as the value of the internal equivalent capacitance of IC which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD · VCC · fIN + ICC 5 2007-10-01 TC74HCT4053AF/AFN/AFT Analog Switch Characteristics (GND = 0 V, Ta = 25°C) (Note 1) Characteristics Symbol RL = 10 kΩ CL = 50 pF fIN = 1 kHz Adjust fIN voltage to obtain 0dBm at VOS Frequency response (switch ON) fMAX Increase fIN frequency until dB meter reads −3dB RL = 50 Ω, CL = 10 pF fIN = 1 MHz, Sine wave Feed through attenuation (switch OFF) Crosstalk (control input to signal output) Vin is centered at (VCC − VEE)/2 Adjust input for 0dBm RL = 600 Ω, CL = 50 pF fIN = 1 MHz, Sine wave RL = 600 Ω, CL = 50 pF fIN = 1 MHz, Square wave (tr = tf = 6 ns) Adjust VIN to obtain 0dBm at input Crosstalk (between any switches) RL = 600 Ω, CL = 50 pF fIN = 1 MHz, Sine wave RL = 50 Ω, CL = 15 pF fIN = 100 kHz, VSWITCH = 1 VRMS −4.5 −5.5 −4.5 −5.5 −4.5 4.5 5.5 4.5 5.5 4.5 140 180 −50 −50 −90 mV −4.5 −5.5 4.5 5.5 −50 −50 dB Test Condition VEE (V) VCC (V) VIN = 8.0 Vp-p VIN = 11.0 Vp-p (Note 2) (Note 3) (Note 2) (Note 3) −4.5 −5.5 −4.5 4.5 5.5 Typ. Unit Sine wave distortion (T.H.D) 0.020 0.019 190 150 200 180 % 4.5 MHz −5.5 5.5 dB dB Note 1: These characteristics are determined by design of devices. Note 2: Input COMMON terminal, and measured at SWITCH terminal. Note 3: Input SWITCH terminal, and measured at COMMON terminal. 6 2007-10-01 TC74HCT4053AF/AFN/AFT Switching Characteristics Test Circuits 1. tpLZ, tpHZ, tpZL, tpZH VCC VC from P.G S1 C I/O VEE GND VCC O/I 1 kΩ 50 pF S2 VO/I (S1 = VCC, S2 = GND) tpZH VO/I (S1 = GND, S2 = VCC) tpZL 1.3 V 1.3 V 90% tpHZ 90% 10% 6 ns 6 ns 3V 1.3 V GND VOH VOL VOH 10% tpLZ VOL 2. Cross Talk (control input − switch output) fIN = 1 MHz duty = 50% tr = tf = 6 ns VCC −VCC GND from P.G C I/O 600 Ω VEE GND VCC O/I 600 Ω 50 pF (COMMON) CIS 50 pF 3. Feedthrough Attenuation VCC C 0.1 μF 600 Ω VIN I/O VCC O/I 600 Ω O/I VEE GND 4. CIOS, CIS, COS CIOS VCC C (SWITCH) I/O COS VCC VEE GND 7 2007-10-01 TC74HCT4053AF/AFN/AFT 5. Cross Talk (between any two switches) VCC C VIN I/O 0.1 μF 600 Ω C I/O 600 Ω VCC O/I 600 Ω 50 pF 10 pF 15 pF 50 pF O/I 600 Ω COM 50 Ω VCC VCC O/I 50 Ω VEE GND VCC 1 VRMS VIN C I/O C I/O VCC VEE GND 6. Frequency Response (switch ON) C VIN 0.1 μF I/O VEE GND 8 2007-10-01 TC74HCT4053AF/AFN/AFT Package Dimensions Weight: 0.18 g (typ.) 9 2007-10-01 TC74HCT4053AF/AFN/AFT Package Dimensions (Note) Note: This package is not available in Japan. Weight: 0.13 g (typ.) 10 2007-10-01 TC74HCT4053AF/AFN/AFT Package Dimensions Weight: 0.06 g (typ.) 11 2007-10-01 TC74HCT4053AF/AFN/AFT RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 12 2007-10-01
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