TLP116A(TPL,E

TLP116A TOSHIBA PHOTOCOUPLER IRED & PHOTO-IC TLP116A Plasma Display Panels (PDPs) High-Speed Interface Factory Automation (FA) Unit: mm 6 Inverter logic (totem-pole output)  SO6 package  Guaranteed performance over: −40 to 100°C  Power supply voltage: 4.5 to 5.5V  Input thresholds current: IFHL = 5 mA (max)  Propagation delay time (tpHL / tpLH): 60 ns (max)  Switching speed: 20 MBd (typ.)  Common-mode transient immunity: 10 kV/μs  Isolation voltage: 3750 Vrms  UL-recognized: UL 1577, File No.E67349  3 1 3.7 ± 0.15 0.4 0.15 7.0 ± 0.4 0.1 2.1 ± 0.1  4 4.55 ± 0.15 The Toshiba TLP116A mini-flat coupler is a small-outline coupler suitable for surface-mount assembly. The TLP116A consists of an infrared LED and an integrated high-gain, high-speed photodetector. This unit is housed in the 6-pin SO package and guarantees a creepage distance of ≥ 5.0mm, a clearance of ≥ 5.0mm and an insulation thickness of ≥ 0.4mm. Therefore, the TLP116A meets the reinforced insulation class requirements of international safety standards. 5 0.5 min 1.27 2.54 TOSHIBA 11−4L1 Weight: 0.08 g (typ.) Pin Configuration (Top View) 1 VCC 6 1: ANODE 3: CATHODE 5 cUL-recognized: CSA Component Acceptance Service No.5A GND 3 SHIELD 4 4: GND 5: VO (Output) 6: VCC File No.E67349  CQC-approved: GB4943.1,GB8898 Japan and Thailand Factory 仅适用干海拔 2000m 以下地区安全使用  VDE-approved: EN 60747-5-5 , EN 62368-1 (Note 1) Schematic Note 1 : When a VDE approved type is needed, ICC please designate the Option(V4). 1＋ Truth Table Input H L LED ON OFF Tr1 OFF ON Tr2 ON OFF 6 IF Tr1 IO VF Output L H 3－ Tr2 SHIELD Construction Mechanical Rating Creepage Distance: 5.0mm (min) Clearance: 5.0mm (min) Insulation Thickness: 0.4mm (min) VCC 5 4 VO GND A bypass capacitor of 0.1μF must be connected between pins 6 and 4. Start of commercial production 2008-07 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-10-10 TLP116A Absolute Maximum Ratings (Ta=25°C) Characteristic Symbol Rating Unit IF 20 mA ΔIF / °C −0.5 mA/°C IFPT 1 A Forward current LED Forward current derating (Ta ≥ 85°C) Peak transient forward current (Note 1) Reverse voltage VR 5 V Input power dissipation PD 40 mW ΔPD/°C -1.0 mW/°C Input power dissipation derating (Ta ≥ 85°C) DETECTOR Output current IO 10 mA ΔIO/°C -0.25 mA/°C Output voltage VO 6 V Supply voltage VCC 6 V Output current derating (Ta ≥ 85°C) PO 40 mW Operating temperature range Output power dissipation Topr −40 to 100 °C Storage temperature range Tstg −55 to 125 °C Lead solder temperature(10 s) Isolation voltage (AC,60 s, R.H. ≤ 60 %) Note: (Note 2) Tsol 260 °C BVs 3750 Vrms Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1 : Pulse width PW ≤ 1 μs, 300 pps. Note 2 :This device is regarded as a two terminal device : pins 1 and 3 are shorted together, as are pins 4,5 and 6. Recommended Operating Conditions Characteristic Input current ON Symbol Min Typ. Max Unit IF(ON) 8 — 18 mA VF(OFF) 0 — 0.8 V Supply voltage VCC 4.5 5.0 5.5 V Operating temperature Topr -40 — 100 °C Input voltage , OFF Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note: The detector of this product requires a power supply voltage (VCC) of 4.5 V or higher for stable operation. If the VCC is lower than this value, an ICC may increase, or an output may be unstable. Be sure to use the product after checking the supply current, and the operation of a power-on/-off. Correlation between Input current, switching speed and drive circuit (reference information). Input current (IF) 12mA 8mA 8mA Test Circuit Typical switching speed 1 (Page 4) 1 (Page 4) 2 (Page 4, With Speed up capacitor) © 2019 Toshiba Electronic Devices & Storage Corporation 21 to 23 MBd 18 to 20 MBd 23 to 27 MBd 2 2019-10-10 TLP116A Electrical Characteristics (Unless otherwise specified, Ta=-40 to 100°C, VCC=4.5 to 5.5 V ) Characteristic Symbol Test Circuit VF — IF = 10 mA ,Ta = 25 °C ΔVF /ΔTa — IR Min Typ. Max Unit 1.45 1.58 1.85 V IF = 10 mA — -2.0 — mV/°C — VR=5 V, Ta = 25 °C — — 10 μA CT — VF = 0 V, f= 1 MHz, Ta = 25 °C — 60 — pF Logic low output voltage VOL 1 IOL = 1.6 mA, IF = 12 mA, VCC = 5 V — — 0.4 V Logic high output voltage VOH 2 4.0 — — V Logic low supply current ICCL 3 IF = 12 mA — — 5.0 mA Logic high supply current ICCH 4 VF = 0 V — — 5.0 mA IFHL — IO = 1.6 mA, VO < 0.4 V — — 5 mA VFLH — IO = -0.02 mA, VO > 4.0 V 0.8 — — V Input forward voltage Temperature coefficient of forward voltage Input reverse current Capacitance between Input terminals Input current logic low output Input voltage logic high output Conditions IOH = −0.02 mA, VF = 1.05 V, VCC = 5 V *All typical values are at Ta=25°C, VCC=5 V, IF(ON)=12 mA unless otherwise specified Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit ― 0.8 ― pF Capacitance input to output CS Vs = 0 V,f = 1 MHz Isolation resistance RS R.H. ≤ 60 %, VS = 500 V 1012 1014 ― Ω Isolation voltage BVS AC, 60 s 3750 ― ― Vrms Note : This device is regarded as a two terminal device : pins 1 and 3 are shorted together, as are pins 4,5 and 6. © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-10-10 TLP116A Switching Characteristics (Unless otherwise specified, Ta=-40 to 100°C, VCC=4.5 to 5.5 V) Characteristic Test Circuit Symbol Propagation delay time to logic low output Propagation delay time to logic high output 60 ns tpLH IF = 12→0 mA CL = 15 pF (Note 1) — — 60 ns tpHL VIN = 0→5 V (IF = 0→8 mA) — — 60 ns — — 60 ns — — 30 ns — 15 — ns — 15 — ns 10000 — — V/μs -10000 — — V/μs Switching time dispersion |tpHL- between ON and OFF tpLH| Output fall time(90-10%) tf Output rise time(10-90%) tr VIN = 5→0 V (IF = 8→0 mA) RIN = 470 Ω CIN = 27 pF CL = 15 pF (Note 1) IF = 12 mA , RIN = 100 Ω, CL =15 pF (Note 1) 5 RIN = 100 Ω CL = 15 pF (Note 1) IF = 0→12 mA IF = 12→0 mA Common mode transient immunity at high Level Unit — tpLH to logic low output Max — 6 Propagation delay time Typ. RIN = 100 Ω 5 Propagation delay time Min IF = 0→12 mA tpHL to logic high output Conditions VCM = 1000 Vp-p, IF = 0 mA, CMH Vo(Min) = 4 V, Ta = 25°C output 7 Common mode transient immunity at low level VCM = 1000 Vp-p, IF = 12 mA, CML Vo(Max) = 0.4 V, Ta = 25°C output *All typical values are at Ta=25°C Note 1: CL is less than 15 pF which includes probe and Jig/stray wiring capacitance. TEST CIRCUIT 1: VOL IF → 1 TEST CIRCUIT 2: VOH VCC 6 5 ↑ 3 GND 4 SHIELD 1 VCC 0.1 μF 5 IOL VOL V 6 VCC 3 ↑ SHIELD GND 4 V VO ↑ IOH VCC 0.1 μF VOH = VCC - VO TEST CIRCUIT 3: ICCL IF → 1 TEST CIRCUIT 4: ICCH VCC ↑ 3 GND 6 ICCL 5 0.1 μF 1 VCC A 5 VCC 3 4 SHIELD SHIELD © 2019 Toshiba Electronic Devices & Storage Corporation 6 4 GND ICCH A 0.1 μF VCC 4 2019-10-10 TLP116A TEST CIRCUIT 5: tpHL, tpLH IF = 12 mA(P.G) (f = 5 MHz , duty = 50% less than tr = tf = 5 ns) 50% VCC 0.1 μF INPUT MONITORING NODE GND SHIELD CL=15 pF IF Vo MONITORING NODE VCC tf VO tr V 90% OH CL = 15 pF RIN=100 Ω 1.5 V 10% VOL tpLH tpHL CL is capacitance of the probe and JIG. (P.G): Pulse Generator TEST CIRCUIT 6: tpHL, tpLH VIN = 5 V(P.G) (f = 5 MHz , duty = 50% less than tr = tf = 5 ns) INPUT MONITORING NODE VCC 0.1 μF CL=15 pF SHIELD CIN=27 pF GND Vo MONITORING NODE CL=15 pF 50% IF VCC tf VO tr V 90% OH RIN=470 Ω 1.5 V 10% CL is capacitance of the probe and JIG. (P.G): Pulse Generator VOL tpLH tpHL TEST CIRCUIT 7: Common-Mode Transient Immunity Test Circuit 90% IF → SW A 1000 V 6 1 VCC B 10% 5 VCC 3 SHIELD GND 4 tf ・SW B : IF=0 mA CMH 4V 0.4 V ・SW A : IF=12 mA VCM CM © 2019 Toshiba Electronic Devices & Storage Corporation tr 0.1 μF VO 5 H = 800(V ) t r ( µs ) CML CM L = 800(V ) t f ( µs ) 2019-10-10 TLP116A Soldering and Storage 1. Precautions for Soldering The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespectiveof whether a soldering iron or a reflow soldering method is used. 1) When Using Soldering Reflow An example of a temperature profile when lead(Pb)-free solder is used.  The soldering temperature profile is based on the package surface temperature (See the figure shown above.)  Reflow soldering must be performed once or twice.  The mounting should be completed with the interval from the first to the last mountings being 2 weeks. 2) When using soldering Flow  Preheat the device at a temperature of 150 °C (package surface temperature) for 60 to 120 seconds.  Mounting condition of 260 °C within 10 seconds is recommended  Flow soldering must be performed once. 3) When using soldering Iron  Complete soldering within 10 seconds for lead temperature not exceeding 260 °C or within 3 seconds not exceeding 350 °C.  Heating by soldering iron must be done only once per lead. 2. Precautions for General Storage 1) Avoid storage locations where devices may be exposed to moisture or direct sunlight. 2) Follow the precautions printed on the packing label of the device for transportation and storage. 3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%, respectively. 4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. 5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. 6) When restoring devices after removal from their packing, use anti-static containers. 7) Do not allow loads to be applied directly to devices while they are in storage. 8) If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-10-10 TLP116A RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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