TLP117(TPR,F)

TLP117 TOSHIBA PHOTOCOUPLER IRED & PHOTO-IC TLP117 PDP (Plasma Display Panel) FA (Factory Automation) High-Speed Interface Unit: mm The Toshiba TLP117 consists of an infrared emitting diode and an integrated high-gain, high-speed photodetector.  Inverter logic (totempole output)  Package type : MFSOP6  Guaranteed performance over temperature : -40 to 105°C  Power supply voltage : 4.5 to 5.5 V  Input thresholds current : IFHL=5 mA (max)  Propagation delay time (tpHL/tpLH) : 30 ns (max) at VL=0 V : 20 ns (max) at VL=1.1 V TOSHIBA  Switching speed  Common mode transient immunity : 10 kV/μs (min)  Isolation voltage  UL-recognized : UL 1577, File No.E67349  cUL-recognized : CSA Component Acceptance Service No.5A File No.E67349  VDE-approved : EN 60747-5-5 (Note 1) : 50 MBd (typ.) 11-4C2 Weight: 0.09 g (typ.) : 3750 Vrms Note 1 : When a VDE approved type is needed, please designate the Option(V4). Truth Table Input H L Pin Configuration (Top View) LED ON OFF M1 OFF ON M2 ON OFF Output L H 1 VCC 6 1:ANODE 3:CATHODE 5 3 GND SHIELD 4 4:GND 5: VO 6: VCC Schematic ICC 6 IF 1+ VCC M1 IO VF 3- M2 SHIELD VO 5 4 GND 0.1μF bypass capacitor must be connected between pins 6 and 4 © 2019 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2007-05 1 2019-05-27 TLP117 Absolute Maximum Ratings (Ta=25°C) Characteristic Symbol Rating Unit IF 25 mA ΔIF/ΔTa -0.7 mA/°C IFPT 1 A Reverse voltage VR 6 V Diode power dissipation PD 40 mW ΔPD /ΔTa -1.0 mW/°C Output current IO 10 mA Output voltage VO 6 V Supply voltage VCC 6 V PO 40 mW Operating temperature range Topr -40 to 105 °C Storage temperature range Tstg -55 to 125 °C Lead solder temperature(10 s) Tsol 260 °C BVs 3750 Vrms Forward current LED Forward current derating (Ta≥85°C) Peak transient forward current (Note 1) DETECTOR Diode power dissipation derating (Ta≥85°C) Output power dissipation Isolation voltage (AC,60 s, R.H. ≤ 60 %, ) (Note 2) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width PW≤1 μs, 300 pps. Note 2: This device is regarded as a two-terminal device: pins 1 and 3 are shorted together, and pins 4,5 and 6 are shorted together. Recommended Operating Conditions Characteristic Input current , ON Input voltage , OFF Supply voltage(*) (Note 1) Symbol Min Typ. Max Unit IF(ON) 10 — 16 mA VF(OFF) 0 — 1.0 V VCC 4.5 5.0 5.5 V * This item denotes operating ranges, not meaning of recommended operating conditions. Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note 1: The detector of this product requires a power supply voltage (VCC) of 4.5 V or higher for stable operation. If VCC is lower than this value, ICC may increase or the output may be unstable. Be sure to use the product after checking the supply current, and the operation of a power-on/-off. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-05-27 TLP117 Electrical Characteristics (Unless otherwise specified, Ta=-40 to 105°C, VCC =4.5 to 5.5V) Symbol Test Circuit VF — IF = 10 mA, Ta = 25 °C ΔVF/ΔTa — Input reverse current IR Capacitance between Input terminals Characteristic Min Typ. Max Unit 1.45 1.6 1.85 V IF = 10 mA — -2.0 — mV/°C — VR = 5 V, Ta = 25 °C — — 10 μA CT — VF = 0 V, f = 1 MHz, Ta = 25 °C — 60 — pF “L” Level VOL 1 IOL = 4 mA, IF = 10 mA — — 0.6 V “H” Level VOH 2 IOH = -4mA, VCC = 4.5V 3.9 — — VF = 1.05V 4.9 — — V VCC = 5.5V “L” Level ICCL 3 IF = 10 mA — — 5.0 mA “H” Level ICCH 4 VF = 0 V — — 5.0 mA IFHL — IO = 20 μA, VO < 0.3 V — — 5 mA VFLH — IO = -20 μA, VO > 4.0 V 0.8 — — V Input forward voltage Temperature coefficient of forward voltage Output voltage Conditions Supply current Output : Input current H → L Output : Input voltage L → H *All typical values are at Ta = 25 °C unless otherwise specified. Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Capacitance input to output CS VS = 0 V, f = 1 MHz Isolation resistance RS R.H. ≤ 60 %, VS = 500 V Isolation voltage BVS AC, 60 s Min Typ. Max Unit ― 0.8 ― pF 1×1012 1014 ― Ω 3750 ― ― Vrms Note : This device is regarded as a two-terminal device: pins 1 and 3 are shorted together, and pins 4,5 and 6 are shorted together. © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-05-27 TLP117 Switching Characteristics (Unless otherwise specified, Ta=-40 to 105°C, VCC=4.5 to 5.5V) Characteristic Propagation delay time to logic high →Low output Propagation delay time to logic low → High output Switching time dispersion between ON and OFF Symbol Test Circuit Conditions tpHL VIN = 0 → 5 V tpLH VIN = 5 → 0 V 5 |tpHL−tpLH| VIN = 5 V RIN = 360 Ω CIN = 22 pF VL = 0 V (Note 1) Min Typ. Max Unit — — 30 ns — — 30 ns — — 10 ns Output fall time (90-10%) tf VIN = 0 → 5 V — 3 — ns Output rise time (10-90%) tr VIN = 5 → 0 V — 2 — ns tpHL VIN = 1.1 → 5 V — — 20 ns tpLH VIN = 5 → 1.1 V — — 20 ns Tpsk — — — 16 ns — 2 8 ns — 3 — ns Propagation delay time to logic high → Low output Propagation delay time to logic low → High output Propagation delay skew Switching time dispersion RIN = 360 Ω 6 CIN = 22 pF VL = 1.1 V |tpHL−tpLH| — tf VIN = 1.1 → 5 V Output rise time (10-90%) tr VIN = 5 → 1.1 V — 3 — ns Data rate T — — 50 — MBd 10000 — — V/μs -10000 — — V/μs between ON and OFF Output fall time (90-10%) Common mode transient immunity at high Level VCM = 1000 Vp-p, Ta = 25 °C CMH IF = 0 mA, VCC = 5 V, VO(Min) = 4 V, output 7 Common mode transient immunity at low level (Note 1) CML output VCM = 1000 Vp-p, Ta = 25 °C IF = 10 mA, VCC = 5 V, VO(Max )= 0.4 V *All typical values are at Ta = 25 °C, VCC = 5 V. Note : This product has an automatic threshold control (ATC) circuit in order to reduce input current dependence of its switching time. The ATC circuit may not be able to respond accordingly when an input signal is driven after a prolonged absence of signals to the product. As a result, switching operation, pertaining to the first pulse of an input signal, could be unstable. Theoretically however, stable switching operation should be achievable from the second pulse onwards. As such, please check the switching operation and take the appropriate measures when designing applications in which this product shall be used. Note 1: CL is approximately 15 pF which includes probe and Jig/stray wiring capacitance. © 2019 Toshiba Electronic Devices & Storage Corporation 4 2019-05-27 TLP117 TEST CIRCUIT 1: VOL IF TEST CIRCUIT 2: VOH 6 1 → 6 1 VCC VCC 0.1μF 5 ↑ 3 5 VOL GND 4 V IOL VCC V VO ↑ IOH VCC 0.1μF 3 ↑ GND 4 SHIELD SHIELD VOH= VCC- VO TEST CIRCUIT 3: ICCL IF 1 → TEST CIRCUIT 4: ICCH ICCL 6 5 ↑ 3 GND 1 6 VCC A VCC 0.1μF A 5 VCC 3 4 GND ICCH 0.1μF VCC 4 SHIELD SHIELD TEST CIRCUIT 5: tpHL , tpLH tr=4.5ns tf=4.5ns INPUT MONITORING NODE VIN=0↔5V(P.G) (f=25MHz , duty=50%) 90% VCC 0.1μF Vo MONITORING NODE VCC *CL=15pF GND 50% VIN 10% tf VO VOH 90% *CL=15pF SHIELD CIN =22pF VL=0V GND tr 50% RIN=360Ω 10% CL is capacitance of the probe and JIG. (P.G): Pulse Generator © 2019 Toshiba Electronic Devices & Storage Corporation tpHL 5 VOL tpLH 2019-05-27 TLP117 TEST CIRCUIT 6: tpHL , tpLH tf=4.5ns tr=4.5ns INPUT MONITORING NODE VIN=1.1↔5V(P.G) (f=25MHz , duty=50%) 90% 50% VCC 0.1μF Vo MONITORING NODE VIN 10% VL=1.1V VCC *CL=15pF GND tf GND *CL=15pF tr VO VOH 90% SHIELD CIN =22pF RIN =360Ω 50% 10% CL is capacitance of the probe and JIG. (P.G) : Pulse Generator VOL tpLH tpHL (example for LED drive circuit) CIN=47pF CIN=22pF INPUT MONITORING NODE CIN 22 F TC7SZ08F/FU f=25MHz VCC P.G VCC RIN1=300Ω RIN2=180Ω 0.1μF RIN3=1.6kΩ Vo MONITORING NODE GND VCC 5V *CL=15pF GND SHIELD CL is capacitance of the probe and JIG. (P.G) : Pulse Generator TEST CIRCUIT 7: Common-Mode Transient Immunity Test Circuit IF → SW A VCC B 5 VCM 0.1μF GND 10% tr tf VO VCC 3 1000V 90% 6 1 ・SW B : IF=0mA CMH 4 4V SHIELD 0.4V ・SW A : IF=10mA VCM CM © 2019 Toshiba Electronic Devices & Storage Corporation 6 H = 800(V ) t r ( µs ) CML CM L =− 800(V ) t f ( µs ) 2019-05-27 TLP117 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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