TLP185(GR,E)

TLP185 TOSHIBA Photocoupler IRED & Photo-Transistor TLP185 Office Machine Programmable Controllers AC Adapter I/O Interface Board Unit: mm The TOSHIBA mini flat coupler TLP185 is a small outline coupler, suitable for surface mount assembly. TLP185 consists of a photo transistor optically coupled to an infrared emitting diode. Since TLP185 is smaller than DIP package, it’s suitable for highdensity surface mounting applications such as programmable controllers. • Collector-emitter voltage: 80 V (min) • Current transfer ratio: 50 % (min) Rank GB: 100% (min) • Isolation voltage: 3750 Vrms (min) • Operation Temperature:-55 to 110 ˚C • UL-recognized: UL 1577, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 • TOSHIBA CQC-approved: GB4943.1,GB8898 Japan and Thailand Factory 11-4M1S Weight: 0.08 g (typ.) 仅适用干海拔 2000m 以下地区安全使用 • VDE-approved: EN 60747-5-5 , EN 62368-1 (Note 1) Pin Configuration (top view) Note 1: When a VDE approved type is needed, please designate the Option(V4). • Construction mechanical rating Creepage distance : 5.0 mm (min) Clearance : 5.0 mm (min) Insulation thickness : 0.4 mm (min) Start of commercial production 2011-12 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-17 TLP185 Current Transfer Ratio Current Transfer Ratio (%) (IC / IF) Type Classification (Note1) IF = 5 mA, VCE = 5 V, Ta = 25°C Marking Of Classification Min Max Blank 50 400 Blank, YE, GR, GB, Y+, G, G+, B Rank Y 50 150 YE , Y+ Rank GR 100 300 GR , G ,G+ Rank GB 100 400 GB, GR, G, G+, BL, B, Rank YH 75 150 Y+ Rank GRL 100 200 G Rank GRH 150 300 G+ Rank BLL 200 400 B TLP185 Note1: Ex Rank GB: TLP185 (GB,E Note: Application, type name for certification test, please use standard product type name, i, e. TLP185(GB,E: TLP185 © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP185 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ΔIF/°C -1.5 mA/°C IFP 1 A Reverse voltage VR 5 V Diode power dissipation PD 100 mW ΔPD/°C -2.9 mW/°C Tj 125 °C Collector-emitter voltage VCEO 80 V Emitter-collector voltage Forward current Forward current derating (Ta ≥ 90°C) LED Pulse forward current (Note 1) Diode power dissipation derating (Ta >90°C) Junction temperature 7 V IC 50 mA Collector power dissipation PC 150 mW ΔPC/°C -1.5 mW/°C Tj 125 °C Operating temperature range Topr -55 to 110 °C Storage temperature range Tstg -55 to 125 °C Lead soldering temperature (10 s) Tsol 260 °C Total package power dissipation PT 200 mW ΔPT/°C -2.0 mW/°C BVS 3750 Vrms Detector VECO Collector current Collector power dissipation derating (Ta ≥ 25°C) Junction temperature Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 2) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width ≤ 100 μs, f = 100 Hz Note 2: Device considered a two terminal device: Pins 1 and 3 shorted together and 4 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VCC ― 5 48 V Forward current IF ― 16 20 mA Collector current IC ― 1 10 mA Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-17 TLP185 Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.1 1.25 1.4 V Reverse current IR VR = 5 V — — 5 μA Capacitance CT V = 0 V, f = 1 MHz — 30 — pF IC = 0.5 mA 80 — — V Collector-emitter breakdown voltage V(BR)CEO Emitter-collector breakdown voltage V(BR)ECO Collector dark current ICEO Capacitance (collector to emitter) CCE IE = 0.1 mA 7 — — V VCE = 48 V — 0.01 0.08 μA VCE = 48 V, Ta = 85 °C — 2 50 μA V = 0 V, f = 1 MHz — 10 — pF Min Typ. Max Unit 50 — 400 100 — 400 — 60 — 30 — — — — 0.3 — 0.2 — — — 0.3 — 1 10 μA Min Typ. Max Unit — 0.8 — pF 1×1012 1014 — Ω 3750 — — Vrms Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Current transfer ratio Saturated CTR IC/IF IC/IF(sat) Test Condition IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB IC = 2.4 mA, IF = 8 mA Collector-emitter saturation voltage VCE(sat) IC = 0.2 mA, IF = 1 mA Rank GB Off-state collector current IC(off) VF = 0.7 V, VCE = 48 V % % V Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance (input to output) Isolation resistance Isolation voltage © 2019 Toshiba Electronic Devices & Storage Corporation Test Condition CS VS = 0 V, f = 1 MHz RS VS = 500 V, R.H. ≤ 60 % BVS AC, 60 s 4 2019-06-17 TLP185 Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn-on time ton Turn-off time toff Turn-on time ton Storage time ts Turn-off time toff Fig. 1 Test Condition VCC = 10 V, IC = 2 mA RL = 100 Ω RL = 1.9 kΩ VCC = 5 V, IF = 16 mA (Fig.1) Min Typ. Max — 5 — — 9 — — 9 — — 9 — — 2 — — 30 — — 70 — Unit μs μs Switching time test circuit IF IF tS VCC RL VCE VCE 0.5V tton ON © 2019 Toshiba Electronic Devices & Storage Corporation VCC 4.5V 5 off ttOFF 2019-06-17 TLP185 I F - Ta P C - Ta 100 Collector power dissipation PC (mW) 160 I F (mA) 80 Forward current 60 40 20 This curve shows the maximum limit to the forward current. 0 -20 0 20 40 60 80 100 120 140 120 100 80 60 40 This curve shows the maximum limit to the collector power dissipation. 20 0 -20 0 20 40 60 80 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) IFP-DR IF-VF 120 100 3000 (mA) Pulse width≤100μs IF (mA) Ta=25˚C IFP 1000 Pulse forward current 500 Forward current 300 100 50 30 This curve shows the maximum limit to the pulse forward current. 10 -1 -2 -3 10 10 10 10 110˚C 85˚C 50˚C 25˚C 0˚C -25˚C -55˚C 1 0.1 0.6 100 0.8 Duty cycle ratio DR 1.2 1.4 Forward voltage VF ∆ V F / ∆ Ta - I F 1.6 1.8 2 (V) IFP – VFP 1000 -3.2 IFP (mA) -2.8 -2.4 -2 Pulse forward current Forward voltage temperature coefficient ΔVF /ΔTa (mV/°C) 1 -1.6 -1.2 -0.8 -0.4 100 10 Pulse width≤10μs Repetitive frequency=100Hz Ta=25°C 0.1 1 Forward current 10 1 100 0.6 IF (mA) 1 1.4 1.8 2.2 2.6 3 3.4 Pulse forward voltage VFP (V) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-06-17 TLP185 IC-VCE IC-VCE 30 40 Ta=25˚C Ta=25˚C PC (max) Collector current IC (mA) Collector current IC (mA) 50 50 30 20 30 15 10 20 10 IF=5mA 0 20 50 30 20 15 10 10 5 I F= 2 m A 0 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 Collector-emitter voltage Collector-emitter voltage VCE (V) IC-IF 1 VCE (V) I C E O - Ta 10 100 Collector current IC (mA) Collector dark current ID (ICEO) (μA) Ta=25˚C 10 1 VCE=10V VCE=5V VCE=0.4V 1 Forward current 10 0.1 VCE=48V 24V 10V 5V 0.01 0.001 0.0001 0.1 0.1 1 0 100 IF (mA) 20 40 60 80 100 120 Ambient temperature Ta (°C) IC/IF -IF 1000 VCE=10V VCE=5V Current transfer ratio IC / IF (%) VCE=0.4V 100 10 0.1 1 Forward current 10 100 IF (mA) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 7 2019-06-17 TLP185 V C E ( s a t ) - Ta I C - Ta 100 0.28 25 (mA) IC 0.20 0.16 Collector current Collector-Emitter saturation Voltage VCE(sat) (V) 0.24 0.12 0.08 10 10 5 1 1 IF=0.5mA IF=8mA, IC=2.4mA 0.04 IF=1mA, IC=0.2mA VCE=5V 0.00 -60 -40 -20 0 20 40 60 80 0.1 -60 -40 -20 100 120 Ambient temperature Ta (°C) 20 40 60 80 100 120 Ambient temperature Ta (°C) S wi t c h i n g t i m e - R L 10000 0 S wi t c h i n g t i m e - Ta 1000 Ta=25˚C IF=16mA VCC=5V toff 100 toff ts Switching time (μs) Switching time (μs) 1000 ts 100 10 10 toff 1 IF=16mA ton VCC=5V RL=1.9kΩ 1 0.1 1 10 -60 -40 -20 100 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Load resistance RL (kΩ) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 8 2019-06-17 TLP185 Soldering and Storage 1. Soldering 1.1 Soldering When using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as much as possible by observing the following conditions. 1) Using solder reflow ∙Temperature profile example of lead (Pb) solder (°C) Package surface temperature 240 This profile is based on the device’s maximum heat resistance guaranteed value. Set the preheat temperature/heating temperature to the optimum temperature corresponding to the solder paste type used by the customer within the described profile. 210 160 140 less than 30s 60 to 120s Time (s) ∙Temperature profile example of using lead (Pb)-free solder (°C) This profile is based on the device’s maximum heat resistance guaranteed value. Set the preheat temperature/heating temperature to the optimum temperature corresponding to the solder paste type used by the customer within the described profile. Package surface temperature 260 230 190 180 60 to 120s 30 to 50s Time (s) Reflow soldering must be performed once or twice. The mounting should be completed with the interval from the first to the last mountings being 2 weeks. 2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder) Please preheat it at 150°C between 60 and 120 seconds. Complete soldering within 10 seconds below 260°C. Each pin may be heated at most once. 3) Using a soldering iron Complete soldering within 10 seconds below 260°C, or within 3 seconds at 350°C. Each pin may be heated at most once. © 2019 Toshiba Electronic Devices & Storage Corporation 9 2019-06-17 TLP185 2. Storage 1) Avoid storage locations where devices may be exposed to moisture or direct sunlight. 2) Follow the precautions printed on the packing label of the device for transportation and storage. 3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%, respectively. 4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. 5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. 6) When restoring devices after removal from their packing, use anti-static containers. 7) Do not allow loads to be applied directly to devices while they are in storage. 8) If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. © 2019 Toshiba Electronic Devices & Storage Corporation 10 2019-06-17 TLP185 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). 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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. https://toshiba.semicon-storage.com/ © 2019 Toshiba Electronic Devices & Storage Corporation 11 2019-06-17