TLP3061

TLP3061(S),TLP3062(S),TLP3063(S) TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC TLP3061(S),TLP3062(S),TLP3063(S) OFFICE MACHINE HOUSEHOLD USE EQUIPMENT TRIAC DRIVER SOLID STATE RELAY The TOSHIBA TLP3061 (S), TLP3062 (S), TLP3063 (S) consist of a zero voltage crossing turn-on photo-triac optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. Unit: mm • • Peak Off-State Voltage Trigger LED Current : 600 V (min) : 15 mA (max) (TLP3061(S)) 10 mA (max) (TLP3062(S)) 5 mA (max) (TLP3063(S)) : 100 mA (max) : 5000 Vrms (min) : UL1577, File No. E67349 : SS EN60065 SS EN60950, File No.9841113 : BS EN60065, File No.8385 BS EN60950, File No.8386 JEDEC EIAJ TOSHIBA weight: 0.39g ― ― 11-7A9 • • • • • • On-State Current Isolation Voltage UL Recognized SEMKO Approved BSI Approved Option (D4) type VDE approved: DIN EN60747-5-2 Approved No. 40009302 Maximum operating insulation voltage: 890VPK Highest permissible over voltage: 8000VPK (Note):When a EN60747-5-2 approved type is needed, please designate the "Option (D4)" • Construction mechanical rating 7.62 mm pich Standard Type Creepage Distance Clearance Insulation Thickness 7.0 mm (Min) 7.0 mm (Min) 0.5 mm (Min) 10.16 mm pich TLPxxxxF type 8.0 mm (Min) 8.0 mm (Min) 0.5 mm (Min) Pin Configuration (top view) 1 2 3 ZC 1: Anode 2: Cathode 3: N.C. 4:Terminal 1 6:Terminal 2 ZC:Zero-cross Circuit 6 4 1 2007-10-01 TLP3061(S),TLP3062(S),TLP3063(S) Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating (Ta ≥ 53°C) LED Peak forward current (100 μs pulse, 100 pps) Power dissipation Power dissipation derating (Ta ≥ 25°C) Reverse voltage Junction temperature Off−state output terminal voltage On−state RMS current Ta = 25°C Ta = 70°C Symbol IF ΔIF / °C IFP PD ΔPD / °C VR Tj VDRM IT(RMS) ΔIT / °C ITP ITSM PD ΔPD / °C Tj Tstg Topr Tsol PT ΔPT / °C (Note 1) BVS Rating 50 −0.7 1 100 −1.0 5 125 600 100 50 −1.1 2 1.2 300 −4.0 115 −55~150 −40~100 260 330 −4.4 5000 Unit mA mA / °C A mW mW / °C V °C V mA mA / °C A A mW mW / °C °C °C °C °C mW mW / °C Vrms On−state current derating (Ta ≥ 25°C) Detector Peak on−state current (100μs pulse, 120 pps) Peak nonrepetitive surge current (Pw = 10 ms, DC = 10%) Power dissipation Power dissipation derating (Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Total package power dissipation Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (AC, 1 min., R.H.≤ 60%) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4 and 6 shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current Peak on−state current Operating temperature Symbol VAC IF* ITP Topr Min. ― 15 ― −25 Typ. ― 20 ― ― Max. 240 25 1 85 Unit Vac mA A °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. ※ In the case of TLP3062 2 2007-10-01 TLP3061(S),TLP3062(S),TLP3063(S) Individual Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Capacitance Peak off−state current Peak on−state voltage Detector Holding current Critical rate of rise of off−state voltage Critical rate of rise of commutating voltage Symbol VF IR CT IDRM VTM IH dv / dt dv / dt (c) Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz VDRM = 600 V ITM = 100 mA ― Vin = 240 Vrms, Ta = 85°C Vin = 60 Vrms, IT = 15mA (Fig.1) (Fig.1) Min. 1.0 ― ― ― ― ― 200 ― Typ. 1.15 ― 10 10 1.7 0.6 500 0.2 Max. 1.3 10 ― 1000 3.0 ― ― ― Unit V μA pF nA V mA V / μs V / μs Coupled Electrical Characteristics (Ta = 25°C) Characteristic TLP3061(S) Trigger LED current TLP3062(S) TLP3063(S) Inhibit voltage Leakage in inhibited state Capacitance input to output Isolation resistance VIH IIH CS RS IF = rated IFT IF = rated IFT VT = rated VDRM VS = 0, f = 1 MHz VS = 500 V (R.H.≤ 60%) AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil IFT VT = 6 V Symbol Test Condition Min. ― ― ― ― ― ― 5×10 10 Typ. ― 5 ― ― 100 0.8 10 14 Max. 15 10 5 50 300 ― ― ― ― ― Unit mA V μA pF Ω Vrms Vdc 5000 ― ― ― 10000 10000 Fig. 1 dv / dt test circuit + VCC − Rin 120Ω Vin RL 4k Ω ～ dv / dt（c） ＋5V,VCC 0V dv / dt 1 2 3 6 4 3 2007-10-01 TLP3061(S),TLP3062(S),TLP3063(S) 60 IF – Ta 120 100 IT(RMS) – Ta 50 Allowable forward current IF (mA) R.M.S. on-state current IT(RMS) (mA) 0 20 40 60 80 100 120 40 80 30 60 20 40 10 0 －20 20 0 －20 0 20 40 60 80 100 120 Ambient temperature Ta (℃) IFP – DR Pulse width≦100μs Ta＝25℃ IF (mA) Ambient temperature Ta (℃) IF – VF Ta＝25℃ 3000 100 50 30 10 5 3 1 0.5 0.3 0.1 Allowable pulse forward current IFP (mA) 1000 500 300 100 50 30 10 3 10－3 3 10－2 3 10－1 3 100 Forward current 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Duty cycle ration DR ΔVF / ΔTa – IF (mA) Forward voltage VF（V) IFP – VFP －3.2 1000 500 300 100 50 30 10 Forward voltage temperature coefficient ΔVF / ΔTa (mV / ℃) －2.8 －2.4 －2.0 －1.6 －1.2 Pulse forward current IFP Pulse width≦10μs 5 3 1 0.6 Repetitive frequency =100Hz Ta=25℃ 1.0 1.4 1.8 2.2 2.6 3.0 －0.8 －0.4 0.1 0.3 0.5 1 3 5 10 30 50 Forward current IF (mA) Pulse forward voltage VFP (V) 4 2007-10-01 TLP3061(S),TLP3062(S),TLP3063(S) Normalized 3 2 IFT － Ta 3 VT=3V 2 1.2 1 Normalized IH － Ta Trigger LED current IFT （Arbitrary unit） 0.5 Holding current IH （Arbitrary unit） －20 0 20 40 60 80 100 1.2 1 0.5 0.3 0.3 0.1 －40 0.1 －40 －20 0 20 40 60 80 100 Ambient temperature Ta (℃) Ambient temperature Ta (℃) 103 Normalized VDRM=Rated IDRM － Ta Normalized 1.4 VDRM － Ta Off-state output terminal voltage V DRM（Arbitrary unit） 100 Peak off-state current IDRM （Arbitrary unit） 1.2 10 2 1.0 0.8 101 0.6 10 0 0.4 0 20 40 60 80 0.2 －40 －20 0 20 40 60 80 100 Ambient temperature Ta (℃) Ambient temperature Ta (℃) Normalized 3 2 1.2 1 VIH － Ta Normalized 3 2 1.2 1 IIH － Ta Inhibit voltage VIH （Arbitrary unit） 0.5 0.3 Inhibit Current IIH （Arbitrary unit） 0.5 0.3 IF ＝ Rated IFT IF ＝ Rated IFT 0.1 －40 －20 0 20 40 60 80 100 0.1 －40 －20 0 20 VT ＝ Rated VDRM 40 60 80 100 Ambient temperature Ta (℃) Ambient temperature Ta (℃) 5 2007-10-01 TLP3061(S),TLP3062(S),TLP3063(S) RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01