TLP361J

TLP361J TOSHIBA Photocoupler GaAs Ired & Photo-Triac TLP361J Triac Drivers Programmable Controllers AC-Output Modules Solid State Relays The TOSHIBA TLP361J consists of a zero-voltage-crossing turn-on photo-triac optically coupled to a gallium arsenide infrared-emitting diode in a four-lead plastic DIP package. • Peak off-state voltage: 600 V (Min.) • Trigger LED current: 10 mA (Max.) • On-state current: 100 mA (Max.) • Isolation voltage: 5000 Vrms (Min.) • Zero crossing Function • UL recognized: UL1577, file No. E67349 JEDEC TOSHIBA ― 11-5B2 Unit: mm •Option (D4) type Weight: 0.26 g (Typ.) TÜV approved: DIN EN60747-5-2 Certificate No. R50033433 Maximum operating insulation voltage : 890 Vpk Maximum permissible overvoltage : 8000 Vpk (Note) When an EN60747-5-2 approved type is needed, please designate “Option (D4).” •Construction mechanical rating 7.62 mm pitch TLPXXX type Creepage distance Clearance Insulation thickness 7.0 mm (min) 7.0 mm (min) 0.4 mm (min) 10.16 mm pitch TLPXXX type 8.0 mm (min) 8.0 mm (min) 0.4 mm (min) Pin Configuration (top view) 1 2 ZC 4 3 •Trigger LED current Classi− fication* (IFT7) Standard ― Trigger LED current (mA) VT=3V, Ta=25°C Min. Max. ７ 10 T7 T7、blank Marking of classification 1: Anode 2: Cathode 3: Terminal1 4: Terminal2 *Example: “(IFT7)”; “TLP361J(IFT7)” (Note) When specifying the application type name for certification testing, be sure to use the standard product type name, e.g., TLP361J(IFT7): TLP361J 1 2007-10-01 TLP361J Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating (Ta ≥ 53°C) LED Peak forward current (100 μs pulse, 100 pps) Reverse voltage Junction temperature Off-state output terminal voltage On-state RMS current Detector On-state current derating (Ta ≥ 25°C) Peak on-state current (100 μs pulse, 120 pps) Peak nonrepetitive surge current Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10s) Isolation voltage (AC, 1 min., R.H.≤ 60%) (Note 1) (Pw = 10 ms, DC = 10%) Ta = 25°C Ta = 70°C Symbol IF ∆IF /°C IFP VR Tj VDRM IT(RMS) ∆IT/°C ITP ITSM Tj Tstg Topr Tsol BVS Rating 50 −0.7 1 5 125 600 100 50 -1.1 2 1.2 115 −55~125 −40~100 260 5000 mA /°C A A °C °C °C °C Vrms Unit mA mA /°C A V °C V mA Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pins 1 and 2 are shorted together and pins 3 and 4 are shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current Peak on-state current Operating temperature Symbol VAC IF ITP Topr Min. Typ. Max. 240 25 1 85 Unit Vac mA A °C — 15 — 20 — −25 — — Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP361J Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Capacitance Peak off-state current Peak on-state voltage Detector Holding current Critical rate of rise of off-state voltage Critical rate of rise of commutating voltage Symbol VF IR CT IDRM VTM IH dv/dt dv/dt(c) IF = 10 mA VR = 5 V V = 0, f = 1 MHz VDRM = 600 V ITM = 100 mA Test Condition Min. 1.0 Typ. 1.15 Max. 1.3 10 Unit V μA pF nA V mA V/μs V/μs — — — — — — (Note 2) (Note 2) 200 — 30 10 1.7 0.6 500 0.2 — 1000 3.0 — — — Vin = 240 Vrms , Ta = 85°C Vin = 60 Vrms , IT = 1 5mA — Coupled Electrical Characteristics (Ta = 25°C) Characteristic Trigger LED current Inhibit voltage Leakage in inhibited state Symbol IFT VIH IIH Test Condition VT = 3 V IF = Rated IFT IF = Rated IFT VT = Rated VDRM VD = 3 →1.5 V , RL = 20 Ω IF = Rated IFTΧ1.5 Min. Typ. Max. 10 Unit mA V μA — — — — — — 200 20 600 100 Turn-on time tON 30 μs Isolation Characteristics (Ta = 25°C) Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0 , f = 1 MHz VS = 500 V, R.H. ≤ 60% AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. Typ. 0.8 12 Max. Unit pF Ω Vrms Vdc — 1×10 — — — — — 10 14 5000 — 10000 10000 — — (Note 2): dv/dt test circuit Rin 120 Ω 1 4 Vin +5 V Vc + Vcc - 2 3 RL 4 kΩ dv/dt (c) dv/dt 0V 3 2007-10-01 TLP361J IF – Ta 100 200 IT (RMS) – Ta 80 160 Allowable forward current IF (mA) 60 R.M.S on-stage current IT (RMS) (mA) 120 40 80 20 40 0 －20 0 20 40 60 80 100 120 0 －20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IFP – DR 3000 Pulse width ≤ 100 μs Ta = 25 °C 100 50 30 Ta = 25 °C IF – V F Allowable pulse forward current IFP (mA) 500 300 (mA) 10 1000 Forward current IF 10－3 1 0 －2 1 0 －1 100 5 3 100 50 30 1 0.5 0.3 0.1 0.6 10 3 3 3 3 0.8 1.0 1.2 1.4 1.6 1.8 Duty cycle ratio DR Forward voltage VF (V) ΔVF/ΔTa – IF －3.2 1000 IFP – VFP IFP (mA) Pulse forward current 500 300 100 50 30 Forward voltage temperature coefficient ΔVF/ΔTa (mV/°C) －2.8 －2.4 －2.0 －1.6 －1.2 －0.8 －0.4 0.1 10 5 3 1 0.6 Pulse width ≤ 10 μs Repetitive Frequency = 100 Hz Ta = 25 °C 1.0 1.4 1.8 2.2 2.6 0.3 0.5 1 3 5 10 30 50 Forward current IF (mA) Pulse forward voltage VFP (V) *: The above graphs show typical characteristics. 4 2007-10-01 TLP361J Normalized 3 2 IFT – Ta 3 VT = 3 V 2 Normalized IH – Ta Trigger LED current IFT (arbitrary unit) Holding current IH (arbitrary unit) －20 0 20 40 60 80 100 1.2 1 1.2 1 0.5 0.5 0.3 0.3 0.1 －40 0.1 －40 －20 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) Normalized 103 VDRM = Rated IDRM – Ta 1.4 Normalized Off-state output terminal voltage VDRM (arbitrary unit) VDRM – Ta Peak off-state current IDRM (arbitrary unit) 1.2 102 1.0 0.8 101 0.6 100 0.4 0 20 40 60 80 100 0.2 －40 －20 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) Normalized 3 2 VIH – Ta 3 2 Normalized IIH – Ta Inhibit voltage VIH (arbitrary unit) 0.5 Inhibit current IIH (arbitrary unit) 1.2 1 1.2 1 0.5 0.3 0.3 IF = Rated IFT VT = Rated VDRM IF = Rated IFT 0.1 －40 0.1 －40 －20 0 20 40 60 80 100 －20 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) *: The above graphs show typical characteristics. 5 2007-10-01 TLP361J 6 2007-10-01 TLP361J RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-10-01