TLP621

TLP621,TLP621−2,TLP621−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP621,TLP621−2,TLP621−4 Programmable Controller AC / DC−Input Module Solid State Relay The TOSHIBA TLP621, −2 and −4 consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP621−2 offers two isolated channels in an eight lead plastic DIP, which the TLP621−4 provides four isolated channels in a sixteen plastic DIP. • • Collector−emitter voltage: 55 V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) TOSHIBA Weight: 0.26 g 11−5B2 Unit in mm Pin Configurations (top view) TLP621 1 4 1 2 3 TLP621-2 8 1 2 3 TLP621-4 16 2 1: Anode 2: Cathode 3: Emitter 4: Collector 3 7 6 15 14 4 1, 3: Anode 2, 4: Cathode 5, 7: Emitter 6, 8: Collector 5 4 5 13 TOSHIBA 12 11 11−10C4 Weight: 0.54 g 6 7 8 1, 3, 5, 7: Anode 2, 4, 6, 8: Cathode 9, 11, 13, 15: Emitter 10, 12, 14, 16: Collector 10 9 TOSHIBA Weight: 1.1 g 11−20A3 1 2007-10-01 TLP621,TLP621−2,TLP621−4 ● Current Transfer Ratio Type Classi− fication *1 (None) Rank Y TLP621 Rank GR Rank BL Rank GB TLP621−2 TLP621−4 (None) Rank GB Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25°C Min. 50 50 100 200 100 50 100 Max. 600 150 300 600 600 600 600 Blank, Y, Y , G, G , B, B , GB Y, Y ■ ■ ■ ■ ■ Marking Of Classification G, G B, B ■ ■ ■ G, G , B, B , GB Blank, GR, BL, GB GR, BL, GB *1: Ex. rank GB: TLP621 (GB) (Note) Application type name for certification test, please use standard product type name, i.e. TLP621 (GB): TLP621 TLP621−2 (GB): TLP621−2 Made In Japan UL recognized BSI approved SEMKO approved E67349 6508, 7445 9735090 / 01 *2 *3 *4 Made In Thailand E152349 6505, 7445 ― *2 *3 *2 *3 *4 UL1577 BS EN60065: 2002, BS EN60950-1: 2002 EN60950 (approved is TLP621 only) 2 2007-10-01 TLP621,TLP621−2,TLP621−4 • Option (D4) type VDE approved: DIN EN 60747-5-2, certificate no. 40009302 Maximum operating insulation voltage: 890 VPK Highest permissible over voltage: 8000 VPK (Note) When a EN 60747-5-2 approved type is needed, please designate the “Option (D4)” 7.62 mm pich standard type : 6.4 mm (min.) : 6.4 mm (min.) : 0.4 mm (min.) 10.16 mm pich (LF2) type 8.0 mm (min) 8.0 mm (min) 0.4 mm (min) • Creepage distance Clearance Insulation thickness 3 2007-10-01 TLP621,TLP621−2,TLP621−4 Absolute Maximum Ratings (Ta = 25°C) Rating Characteristic Forward current Forward current derating Pulse forward current LED Power dissipation Power dissipation derating Reverse voltage Junction temperature Collector−emitter voltage Emitter−collector voltage Detector Collector current Collector power dissipation (1 circuit) Collector power dissipation derating (1 circuit, Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature Total package power dissipation Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (Note 1) Symbol IF ΔIF /°C IFP PD ΔPD /°C VR Tj VCEO VECO IC PC ΔPC /°C Tj Tstg Topr Tsol PT ΔPT /°C BVS 250 −2.5 150 −1.5 125 −55~125 −55~100 260 (10 s) 150 −1.5 TLP621 60 −0.7 (Ta > 39°C) TLP621−2 TLP621−4 50 −0.5 (Ta = 25°C) Unit mA mA /°C A mW mW /°C V °C V V mA 100 −1.0 mW mW /°C °C °C °C °C mW mW /°C Vrms 1 (100μs pulse, 100pps) 100 −1.0 5 125 55 7 50 70 −0.7 5000 (AC, 1min., R.H.≤ 60%) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF IC Topr Min. ― ― ― −25 Typ. 5 16 1 ― Max. 24 20 10 85 Unit V mA mA °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 4 2007-10-01 TLP621,TLP621−2,TLP621−4 Individual Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Capacitance Collector−emitter breakdown voltage Detector Emitter−collector breakdown voltage Collector dark current Capacitance (collector to emitter) Symbol VF IR CT V(BR) CEO V(BR) ECO ICEO CCE Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz IC = 0.5 mA IE = 0.1 mA VCE = 24 V VCE = 24 V, Ta = 85°C V = 0, f = 1 MHz Min. 1.0 — — 55 7 — — — Typ. 1.15 — 30 — — 10 2 10 Max. 1.3 10 — — — 100 50 — Unit V μA pF V V nA μA pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 5 mA, VCE = 5 V MIn. 50 Rank GB 100 — Rank GB 30 — — Rank GB — Typ. — — 60 — — 0.2 — Max. 600 600 — — 0.4 — 0.4 V Unit % Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V IC = 2.4 mA, IF = 8 mA % Collector−emitter saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA Isolation Characteristics (Ta = 25°C) Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. — 1×10 12 Typ. 0.8 10 14 Max. — — — — — Unit pF Ω Vrms Vdc 5000 — — — 10000 10000 5 2007-10-01 TLP621,TLP621−2,TLP621−4 Switching Characteristics (Ta = 25°C) Characteristic Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn−off time Symbol tr tf ton toff tON tS tOFF RL = 1.9 kΩ (Fig.1) VCC = 5 V, IF = 16 mA VCC = 10 V, IC = 2 mA RL = 100Ω Test Condition Min. — — — — — — — Typ. 2 3 3 3 2 15 25 Max. — — — — — — — μs μs Unit Fig. 1 Switching time test circuit IF VCC VCE IF tS VCE VCC 4.5V 0.5V tON tOFF RL 6 2007-10-01 TLP621,TLP621−2,TLP621−4 TLP621 100 IF – Ta 100 TLP621-2 TLP621-4 IF – Ta Allowable forward current IF (mA) 60 Allowable forward current IF (mA) 100 120 80 80 60 40 40 20 20 0 -20 0 20 40 60 80 0 -20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) TLP621 240 PC – Ta 120 TLP621-2 TLP621-4 PC – Ta Allowable collector power dissipation PC (mW) 160 Allowable collector power dissipation PC (mW) 0 20 40 60 80 100 120 200 100 80 120 60 80 40 40 20 0 -20 0 -20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) TLP621 3000 IFP – DR Pulse width ≤ 100μs Ta = 25°C 3000 TLP621-2 TLP621-4 IFP – DR Pulse width ≤ 100μs Ta = 25°C IFP (mA) 1000 500 300 IFP (mA) Pulse forward current 1000 500 300 Pulse forward current 100 50 30 100 50 30 10 3 10-3 3 10-2 3 10-1 3 100 10 3 10-3 3 10-2 3 10-1 3 100 Duty cycle ratio DR Duty cycle ratio DR 7 2007-10-01 TLP621,TLP621−2,TLP621−4 IF – V F 100 50 Ta = 25°C ΔVF / ΔTa – IF Forward voltage temperature coefficient ΔVF / ΔTa (mV /°C) -2.8 (mA) 30 -2.4 IF 10 5 3 -2.0 Forward current -1.6 1 0.5 0.3 0.1 0.4 -1.2 -0.8 -0.4 0.1 0.6 0.8 1.0 1.2 1.4 1.6 0.3 1 3 10 30 Forward voltage VF (V) Forward current IF (mA) IFP – VFP 1000 Pulse width ≤ 10μs 500 Repetitive 300 Frequency = 100Hz Ta = 25°C 100 50 30 101 VCE = 24V ID – Ta 10V 5V IFP (mA) ID (μA) Dark current 100 Pulse forward current 10-1 10-2 10 5 3 1 0 10-3 0.4 0.8 1.2 1.6 2.0 2.4 10-4 0 40 80 120 160 Pulse forward voltage VFP (V) Ambient temperature Ta (°C) IC – VCE 80 Ta = 25°C 25 50mA IC – VCE 40mA 30mA 20 20mA Ta = 25°C IC (mA) 60 50mA 30mA 20mA 40 15mA PC (MAX.) IF = 5mA IC (mA) Collector current Collector current 15 10mA 10 5mA 10mA 20 5 IF = 2mA 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 8 2007-10-01 TLP621,TLP621−2,TLP621−4 IC – IF 100 50 Ta = 25°C VCE = 0.4V 500 VCE = 5V 300 IC / IF – IF 30 IC / IF (%) (mA) Sample A IC 10 Sample A 5 3 Sample B 1 0.5 0.3 100 Sample B 50 30 Ta = 25°C VCE = 5V VCE = 0.4V 10 5 0.3 1 3 10 30 100 Collector current Current transfer ratio 0.1 0.05 0.03 0.3 1 3 10 30 100 0.20 IF = 5mA IC = 1mA Forward current IF (mA) VCE (sat) – Ta Forward current IF (mA) Collector-emitter saturation Voltage VCE (sat) (V) 0.16 0.12 IC – Ta 100 25mA 50 30 10mA VCE = 5V 0.08 (mA) 0.04 IC Collector current 10 5 3 5mA 0 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) 1mA 1 0.5 0.3 Switchingtime – RL 1000 Ta = 25°C IF = 16mA VCC = 5V IF = 0.5mA 500 (μs) Switching time 300 0.1 tOFF 100 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) 50 30 ts 10 5 3 tON 1 1 3 10 30 100 300 Load resistance RL (kΩ) 9 2007-10-01 TLP621,TLP621−2,TLP621−4 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 10 2007-10-01