TLP719

TLP719 TOSHIBA PHOTOCOUPLER GaAℓAs IRED + PHOTO−IC TLP719 Digital logic ground isolation Line receivers Microprocessor system interfaces Switching power supply feedback control Transistor invertors The TOSHIBA TLP719 consists of a GaAℓAs high-output light-emitting diode and a high-speed detector. This unit is a 6-lead SDIP. The TLP719 is 50% smaller than the 8-pin DIP and meets the reinforced insulation class requirements of international safety standards. Therefore the mounting area can be reduced in equipment requiring safety standard certification. The TLP719 has a Faraday shield integrated on the photodetector chip to provide an effective common mode noise transient immunity. Therefore this product is suitable for application in noisy environmental conditions. • • • • • Open collector Package type Isolation voltage Common mode transient immunity Switching speed : SDIP6 : 5000 Vrms (min) : ±10 kV/us(min) @VCM = 400 V : tpHL/ tpLH = 0.8 μs (max) @ IF = 16 mA , VCC = 5 V, RL = 1.9 kΩ , Ta = 25 °C Unit in mm 4.58±0.25 654 3.65 +0.15 −0.25 6.8±0.25 123 1.27±0.2 0.4±0.1 0.25± +0.10 −0.05 7.62±0.25 1.25±0.25 9.7±0.3 11-5J1 TOSHIBA 11-5J1 Weight：0.26 g (t yp .) • • TTL compatible Construction mechanical rating 7.62-mm pitch standard type Creepage Distance Clearance Insulation Thickness 7.0 mm (min) 7.0 mm (min) 0.4 mm (min) 10.16-mm pitch TLPXXXF type 8.0 mm (min) 8.0 mm (min) 0.4 mm (min) PIN CONFIGURATION (Top View) 1 2 3 SHIELD 6 5 4 1 : ANODE 2 : N.C. 3 : CATHODE 4 : EMITTER (GND) 5 : COLLECTOR (OUTPUT) 6 : VCC • • UL recognized Option (D4) TÜV approved : UL1577, File No. E67349 : EN60747-5-2 Certificate No. R50033433 Maximum operating insulation voltage : 890 Vpk Highest permissible over voltage : 8000 Vpk ( Note ) When a EN60747-5-2 approved type is needed, please designate the “Option(D4)” SCHEMATIC 1 VF IF ICC IO 6 5 VCC VO GND 3 SHIELD 4 A 0.1-μF bypass capacitor must be connected between pins 4 and 6. (See Note 7.) 1 2007-10-01 4.0 −0.20 +0.25 TLP719 Absolute Maximum Ratings (Ta = 25 °C) Characteristic Forward current Pulse forward current LED Peak transient forward current Reverse voltage Diode power dissipation Junction temperature Output current Peak output current Detector Output voltage Supply voltage Output power dissipation Junction Temperature Operating temperature range Storage temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 1 minute, R.H.≤ 60 %) (Note 6) (Note 5) (Note 4) (Note 1) (Note 2) (Note 3) Symbol IF IFP IFPT VR PD Tj IO IOP VO VCC PO Tj Topr Tstg Tsol BVS Rating 25 50 1 5 45 125 8 16 −0.5~20 −0.5~30 100 125 −55~100 −55~125 260 5000 Unit mA mA A V mW °C mA mA V V mW °C °C °C °C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Derate 0.45 mA / °C above 70 °C. Note 2: 50% duty cycle, 1 ms pulse width. Derate 0.9 mA / °C above 70 °C. Note 3: Pulse width ≤ 1 μs, 300 pps. Note 4: Derate 0.8 mW / °C above 70 °C. Note 5: Derate 1.8 mW / °C above 70 °C. Note 6: Device considered a two-terminal device: pins 1, 2 and 3 paired with pins 4, 5 and 6 respectively. Note 7: A ceramic capacitor (0.1 μF) should be connected from pin 6 to pin 4 to stabilize the operation of the high-gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed 1 cm. 2 2007-10-01 TLP719 Electrical Characteristics (Ta = 25 °C) Characteristic Forward voltage LED Forward voltage Temperature coefficient Reverse current Capacitance between terminals Symbol VF ΔVF / ΔTa IR CT IOH (1) HIGH-level output current Detector IOH (2) IOH HIGH-level supply current Supply voltage Output voltage ICCH VCC VO Test Condition IF = 16 mA IF = 16 mA VR = 5 V VF = 0 V , f = 1 MHz IF = 0 mA ,VCC = VO = 5.5 V IF = 0 mA ,VCC = 30 V V O = 20 V IF = 0 mA ,VCC = 30 V VO = 20 V,Ta = 70 °C IF = 0 mA ,VCC = 30 V ICC = 0.01 mA IO = 0.5 mA ― ― ― ― ― ― ― 30 20 Min. Typ. 1.65 −2 ― 45 3 ― ― 0.01 ― ― Max. 1.85 ― 10 ― 500 5 μA 50 1 ― ― μA V V Unit V mV / °C μA pF nA Coupled Electrical Characteristics (Ta = 25 °C) Characteristic Current transfer ratio LOW-level output voltage Symbol IO / IF VOL Test Condition IF = 16 mA ,VCC = 4.5 V VO = 0.4 V IF = 16 mA, VCC = 4.5 V IO = 2.4 mA Min. 20 ― Typ. ― ― Max. ― 0.4 Unit % V Isolation Characteristics (Ta = 25 °C) Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition V = 0 V , f = 1 MHz R.H. ≤ 60% ,VS = 500 V AC, 1 minute Isolation voltage BVS AC, 1 second , in oil DC, 1 minute , in oil (Note 6) (Note 6) Min. ― 1×10 12 Typ. 0.8 10 14 Max. ― ― ― ― ― Unit pF Ω Vrms Vdc 5000 ― ― ― 10000 10000 3 2007-10-01 TLP719 Switching Characteristics (Ta = 25 °C, VCC = 5 V) Characteristic Propagation delay time Propagation delay time (H→ L) (L→ H) Symbol tpHL Fig1 tpLH Test Circuit Test Condition IF = 0→ 16 mA RL = 1.9kΩ IF = 1 6 → 0 m A RL = 1.9kΩ IF = 0 m A VCM = 400 Vp−p RL = 1.9kΩ IF = 16 mA VCM = 400 Vp−p RL = 1.9 kΩ Min. ― ― Typ. ― ― Max. 0.8 0.8 Unit μs μs Common mode transient immunity at logic HIGH output (Note 8) Common mode transient immunity at logic LOW output (Note 8) CMH Fig2 CML 10000 ― ― V / μs −10000 ― ― V / μs Note 8 : CML is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic LOW state (VO < 0.8 V). CMH is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic HIGH state (VO >2 V). Figure 1. Switching Time Test Circuit VCC = 5 V 1 2 3 6 5 4 SHIELD 1.5V VOL RL VO IF PULSE INPUT ( PW = 100 μs Duty = 10%) → IF MONITORING NODE 0.1 μF tpHL VO tpLH 5V IF MONITORING NODE Figure 2. Common Mode Noise Immunity Test Circuit. → SW A B IF 1 2 3 SHIELD 6 5 4 VCC=5V RL=1.9kΩ VO 0.1μF 90% 400 V VCM SW:B (IF= 0 mA) tr tf 10% 0V CMH 2V 0.8 V CML VOH CMH = CML = − 320 (V) tr (μs) 320 (V) tf (μs) + VCM − VOL SW:A (IF = 16 mA) 4 2007-10-01 TLP719 IF – V F 50 30 Ta = 25°C ΔVF / ΔTa – IF Forward voltage temperature coefficient Δvf / Δta (mV / °C) −2.6 100 IF (mA) −2.4 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 1.0 −2.2 Forward current −2.0 −1.8 −1.6 1.2 1.4 1.6 1.8 2.0 −1.4 0.1 0.3 0.5 1 3 5 10 30 Forward voltage VF (V) Forward current IF (mA) IOH(1) – Ta 300 10 5 IO – IF VCC = 5 V VO = 0.4 V Ta = 25°C High level output current IOH(1) (nA) 50 30 (mA) IO Output current 0 40 80 120 160 100 3 1 0.5 0.3 10 5 3 0.1 0.05 0.03 1 0.01 0.1 0.3 0.5 1 3 5 10 30 50 100 300 Ambient temperature Ta (°C) Forward current IF (mA) IO / IF – IF 100 IO / IF – Ta VCC = 5 V VO = 0.4 V 1.0 1.2 (%) IO / IF 50 30 Ta = 25°C IO / IF Normalized 25°C 100°C 0.8 Current transfer ratio 10 0.6 Normalized to IF = 16 mA VCC = 4.5 V VO = 0.4 V 5 3 0.4 0.2 1 0.3 0.5 1 3 5 10 30 50 0 -40 -20 0 20 40 60 80 100 Forward current IF (mA) Ambient temperature Ta (°C) 5 2007-10-01 TLP719 IO – VO 10 30mA 25mA 8 VCC = 5 V Ta = 25°C 5 VO – IF IF VCC = 5V RL Vo 3 (mA) 20mA IO Output current 6 15mA Output voltage VO (V) 4 Ta = 25°C 2 RL = 2 kΩ 3.9 kΩ 1 10 kΩ 0 0 4 10mA 2 IF = 5mA 0 0 1 2 3 4 5 6 7 4 8 12 16 20 24 Output voltage VO (V) Forward current IF (mA) 5 3 I F =16mA VCC=5V Ta=25℃ tpHL, tpLH - RL Propagation delay time 　tpHL, tpLH （μs） tpHL , tpLH - Ta 5 3 I F =16mA VCC=5V RL=1.9kΩ Propagation delay time tpHL, tpLH (μs） tpLH 1 0.5 1 0.5 0.3 tpHL tpHL 0.3 tpLH 0.1 1 10 30 50 0.1 -40 -20 0 20 40 60 80 100 3 5 100 Load resistance　R L　（ｋΩ） Ambient temperature　Ta　（℃） 6 2007-10-01 TLP719 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-10-01