TLP781(BL,F)

TLP781/TLP781F TOSHIBA Photocoupler IRED & Photo−Transistor TLP781, TLP781F TLP781 Office Equipment Home Electric Appliances Solid-State Relays Switching Power Supplies Contactless Controller Outputs Simplex/Multiplex Data Transmission Unit: mm The TOSHIBA TLP781 consists of a silicone photo−transistor optically coupled to an infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5000 Vrms (min)).  TLP781  TLP781F : 10.16mm pitch type DIP4  Collector-emitter voltage: 80 V (min)  Current transfer ratio: 50 % (min) TOSHIBA : 7.62mm pitch type DIP4 ― Weight: 0.25g (typ.) Unit: mm TLP781F Rank GB: 100 % (min)  Isolation voltage: 5000 Vrms (min)  UL recognized: UL 1577, File No.E67349  cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349  VDE-approved : EN 60747-5-5 (Note 1) Note 1 : When a VDE approved type is needed, please designate the Option (D4).  TOSHIBA Construction mechanical rating 7.62mm Pitch Standard Type 10.16mm Pitch TLPxxxF Type Creepage distance 6.5mm (min) 8.0mm (min) Clearance 6.5mm (min) 8.0mm (min) Insulation thickness 0.4mm (min) 0.4mm (min) ― Weight: 0.25g (typ.) Pin Configurations (top view) 1 4 2 3 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector Start of commercial production © 2019 Toshiba Electronic Devices & Storage Corporation 1 2007-07 2019-03-11 TLP781/TLP781F Current Transfer Ratio Type TLP781 Classification (Note 1) Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25°C Min Max Marking Of Classification (None) 50 600 Blank, Y+, YE, G, G+, GR, B, BL,GB Rank Y 50 150 YE Rank GR 100 300 GR Rank BL 200 600 BL Rank GB 100 600 GB Rank YH 75 150 Y+ Rank GRL 100 200 G Rank GRH 150 300 G+ Rank BLL 200 400 B (Note 1): e.g. rank GB: TLP781 (GB) (Note 2): Application type name for certification test, please use standard product type name, e.g. TLP781 (GB): TLP781 Absolute Maximum Ratings (Ta = 25°C) Characteristics Forward current Forward current derating (Ta ≥ 39°C) LED Pulse forward current (Note 3) Power dissipation Power dissipation derating (Ta ≥ 39°C) Reverse voltage Rating Unit IF 60 mA ΔIF / °C 0.7 mA / °C IFP 1 A PD 100 mW ΔPD / °C 1.0 mW / °C VR 5 V Tj 125 °C Collectoremitter voltage VCEO 80 V Emittercollector voltage VECO 7 V Collector current IC 50 mA Power dissipation PC 150 mW ΔPC / °C 1.5 mW / °C Tj 125 °C Operating temperature range Topr 55 to 110 °C Storage temperature range Tstg 55 to 125 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 250 mW ΔPT / °C 2.5 mW / °C BVS 5000 Vrms Detector Junction temperature Symbol Power dissipation derating (Ta ≥ 25°C) Junction temperature Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (Note 4) (Note): Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). (Note 3): Pulse width:100 μs or less, 100 Hz frequency (Note 4): AC, 60 s, R.H.≤ 60 %. Apply voltage to LED pin and detector pin together. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-03-11 TLP781/TLP781F Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage VCC ― 5 24 V Forward current IF ― 16 25 mA Collector current IC ― 1 10 mA Topr 25 ― 85 °C Operating temperature (Note): Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 μA Capacitance CT V = 0 V, f = 1 MHz ― 30 ― pF Collectoremitter breakdown voltage V(BR) CEO IC = 0.5 mA 80 ― ― V Emittercollector breakdown voltage V(BR) ECO IE = 0.1 mA 7 ― ― V VCE = 24 V ― 0.01 0.1 μA VCE = 24 V, Ta = 85 °C ― 0.6 50 μA V = 0 V, f = 1 MHz ― 10 ― pF Min Typ. Max Unit 50 ― 600 100 ― 600 ― 60 ― 30 ― ― IC = 2.4 mA, IF = 8 mA ― ― 0.4 IC = 0.2 mA, IF = 1 mA ― 0.2 ― ― ― 0.4 Min Typ. Max Unit ― 0.8 ― pF 1×1012 1014 ― Ω 5000 ― ― Vrms Collector dark current Capacitance (collector to emitter) ID(ICEO) CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristics Current transfer ratio Saturated CTR Collectoremitter saturation voltage Symbol IC / IF IC / IF (sat) VCE (sat) Test Condition IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB Rank GB % % V Isolation Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Capacitance (input to output) CS VS = 0 V, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. ≤ 60 % Isolation voltage BVS © 2019 Toshiba Electronic Devices & Storage Corporation AC, 60 s 3 2019-03-11 TLP781/TLP781F Switching Characteristics (Ta = 25°C) Characteristics Symbol Rise time tr Fall time tf Turnon time ton Turnoff time toff Turnon time tON Storage time ts Turnoff time tOFF Test Condition VCC = 10 V, IC = 2 mA RL = 100Ω RL = 1.9 kΩ VCC = 5 V, IF = 16 mA (Note 5) Min Typ. Max ― 2 ― ― 3 ― ― 3 ― ― 3 ― ― 2 ― ― 25 ― ― 50 ― Unit μs μs IF IF VCC RL VCE ts VCC 4.5V VCE 0.5V tON tOFF (Note 5): Switching time test circuit Surface-Mount Lead Form Options TLP781(LF6) ― TOSHIBA Weight: TLP781F(LF7) Unit: mm 0.24g (typ.) © 2019 Toshiba Electronic Devices & Storage Corporation TOSHIBA Weight: 4 Unit: mm ― 0.24g (typ.) 2019-03-11 TLP781/TLP781F Specifications for Embossed-Tape Packing: (TP6), (TP7) 1. Applicable Package Package Name Product Type DIP4LF6 TLP781 DIP4LF7 TLP781F 2. Product Naming System Type of package used for shipment is denoted by a symbol suffix after a product number. The method of classification is as below. (Example 1) ＴＬＰ７８１（ＢＬ－ＴＰ６） Tape type CTR rank Device name (Example 2) ＴＬＰ７８１F（ＢＬ－ＴＰ７） Tape type CTR rank Device name 3. Tape Dimensions 3.1 Orientation of Device in Relation to Direction of Tape Movement Device orientation in the recesses is as shown in Figure 1. Tape feed Figure1 Device Orientation 3.2 Tape Packing Quantity: 2000 devices per reel 3.3 Empty Device Recesses Are as Shown in Table 1. Table1 Empty Device Recesses Occurrences of 2 or more successive empty device recesses Single empty recesses device Standard Remarks 0 device Within any given 40mm section of tape, not including leader and trailer 6 devices (max.) per reel Not including leader and trailer 3.4 Start and End of Tape The start of the tape has 30 or more empty holes. The end of the tape has 50 or more empty holes. © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-03-11 TLP781/TLP781F 3.5 Tape Specification [1] TLP781 (TP6) (1)Tape material: Synthetic Resin (2)Dimensions: The tape dimensions are as shown in Figure 2. +0.2 16.0 -0.1 7.5±0.1 4.0±0.1 8.0±0.1 10.6±0.1 φ1.5 +0.1 -0 1.75±0.1 2.0±0.1 0.33±0.02 φ1.5 +0.2 -0 4.2±0.1 4.45±0.1 Figure 2 Tape Forms Unit: mm [2] TLP781F (TP7) (1)Tape material: Synthetic Resin (2)Dimensions: The tape dimensions are as shown in Figure 3. 4.4±0.1 φ1.5 +0.25 -0 +0.3 24.0 -0.1 4.0±0.1 8.0±0.1 11.5±0.1 φ1.5 +0.1 -0 12.35±0.1 0.33±0.02 1.75±0.1 2.0±0.1 5.05±0.1 Unit: mm Figure 3 Tape Forms © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-03-11 TLP781/TLP781F 3.6 Reel Specification [1] TLP781 (TP6) (1)Material: Synthetic Resin (2)Dimensions: The reel dimensions are as shown in Figure 4. 3.6±0.8 +2.0 1.5±0.5 23max φ332 max φ102±1.5 φ13.0±0.5 16.4 -0 Unit: mm Figure 4 Reel Forms [2] TLP781F (TP7) (1)Material: Synthetic Resin (2)Dimensions: The reel dimensions are as shown in Figure 5. +2.0 φ100±1.5 φ13.0±0.5 1.9±0.5 31max φ330 max 24.4 -0 4.0±0.3 Unit: mm Figure 5 Reel Forms 4. Packing One reel of photocouplers is packed in a shipping carton. 5. Label Indication The carton bears a label indicating the product number, the symbol representing classification of standard, the quantity, the lot number and the Toshiba company name. 6. Ordering Information When placing an order, please specify the product number, the CTR rank, the tape type and the quantity as shown in the following example. (Example) ＴＬＰ７８１（ＢＬ－ＴＰ６）2000Pcs. Quantity (must be a multiple of 2000) Tape type CTR rank Device name (Note): The order code may be suffixed with a letter or a digit. Please contact your nearest Toshiba sales representative for more details. © 2019 Toshiba Electronic Devices & Storage Corporation 7 2019-03-11 TLP781/TLP781F Soldering and Storage 1. Soldering 1.1 Soldering When using a soldering iron or medium infrared ray/hot air reflow, avoid a rise in device temperature as much as possible by observing the following conditions. 1) Using solder reflow ∙Temperature profile example of lead (Pb) solder (°C) This profile is based on the device’s maximum heat resistance guaranteed value. Set the preheat temperature/heating temperature to the optimum temperature corresponding to the solder paste type used by the customer within the described profile. Package surface temperature 240 210 160 140 less than 30s 60 to 120s Time (s) ∙Temperature profile example of using lead (Pb)-free solder (°C) This profile is based on the device’s maximum heat resistance guaranteed value. Set the preheat temperature/heating temperature to the optimum temperature corresponding to the solder paste type used by the customer within the described profile. Package surface temperature 260 230 190 180 60 to 120s 30 to 50s Time (s) 2) Using solder flow (for lead (Pb) solder, or lead (Pb)-free solder) ・Please preheat it at 150°C between 60 and 120 seconds. ・Complete soldering within 10 seconds below 260°C. Each pin may be heated at most once. 3) Using a soldering iron Complete soldering within 10 seconds below 260°C, or within 3 seconds at 350°C. Each pin may be heated at most once. © 2019 Toshiba Electronic Devices & Storage Corporation 8 2019-03-11 TLP781/TLP781F 2. Storage 1) Avoid storage locations where devices may be exposed to moisture or direct sunlight. 2) Follow the precautions printed on the packing label of the device for transportation and storage. 3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%, respectively. 4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. 5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. 6) When restoring devices after removal from their packing, use anti-static containers. 7) Do not allow loads to be applied directly to devices while they are in storage. 8) If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. © 2019 Toshiba Electronic Devices & Storage Corporation 9 2019-03-11 TLP781/TLP781F EN 60747-5-5 ‘Option: (D4)’ Types: TLP781, TLP781F Type designations for ‘option: (D4) ’, which are tested under EN 60747 requirements. e.g.: TLP781 (D4-GR-LF6,F D4: EN 60747 option GR: CTR rank name LF6: standard lead bend name F: [[G]]/RoHS COMPATIBLE (Note 1) Note: Use TOSHIBA standard type number for safety standard application. e.g. TLP781 (D4-GR-LF6) → TLP781 Note 1: Please contact your Toshiba sales representative for details on environmental information such as the product's RoHS compatibility. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronics equipment. EN 60747 Isolation Characteristics Description Symbol Rating Unit Application classification for rated mains voltage ≤ 300 Vrms for rated mains voltage ≤ 600 Vrms ― IIV IIII 55 / 115 / 21 ― 2 ― VIORM 890 Vpk Input to output test voltage, Vpr = 1.6×VIORM, type and sample test tp = 10s, partial discharge < 5pC Vpr 1424 Vpk Input to output test voltage, Vpr = 1.875×VIORM, 100% production test tp = 1s, partial discharge < 5pC Vpr 1670 Vpk Highest permissible overvoltage (transient overvoltage, tpr = 60s) VTR 6000 Vpk Safety limiting values (max. permissible ratings in case of fault) current (input current IF, Psi = 0) power (output or total power dissipation) temperature Isi Psi Tsi 300 500 150 mA mW C Insulation resistance, VIO = 500V, Ta=25℃ Rsi 1012 Ω Climatic classification Pollution degree Maximum operating insulation voltage © 2019 Toshiba Electronic Devices & Storage Corporation 10 2019-03-11 TLP781/TLP781F Insulation Related Specifications 7.62mm pitch TLPxxx type 10.16mm pitch TLPxxxF type Minimum creepage distance Cr 6.5mm 8.0mm Minimum clearance Cl 6.5mm 8.0mm Minimum insulation thickness ti 0.4 mm CTI 175 Comparative tracking index (1) If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this value. (e.g. at a standard distance between soldering eye centres of 7.5mm). If this is not permissible, the user shall take suitable measures. (2) This photocoupler is suitable for ‘safe electrical isolation’ only within the safety limit data. Maintenance of the safety data shall be ensured by means of protective circuits. VDE test sign: Marking on product for EN 60747 4 Marking on packing for EN 60747 Marking Example : TLP781, TLP781F Lot No. Part No. (or abbreviation code) CTR Rank Marking P 4: Mark for option (D4) 1pin indication © 2019 Toshiba Electronic Devices & Storage Corporation 11 2019-03-11 TLP781/TLP781F IF – Ta 100 PC – Ta 200 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) 80 60 40 20 160 120 80 40 0 20 0 -20 0 20 40 60 80 100 120 0 Ambient temperature Ta (℃) ΔVF / ΔTa 40 60 100 80 120 Ambient temperature Ta (℃) – IF IF – VF 100.0 (mA) -2.6 -2.2 Forward current IF Forward voltage temperature coefficient ΔVF / ΔTa (mV / ℃) -3.0 20 -1.8 -1.4 10.0 1.0 -1.0 -0.6 0 0.1 1 Forward current 10 0.1 100 0.40 0.60 IF (mA) 0.80 1.00 Forward voltage 1.20 VF 1.40 1.60 (V) IFP – VFP 1000 Pulse width ≤ 10μs Pulse forward current IFP (mA) Repetitive frequency=100Hz Ta = 25℃ 100 10 1 0.00 0.40 0.80 1.20 1.60 2.00 2.40 Pulse forward voltage VFP (V) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 12 2019-03-11 TLP781/TLP781F ID – Ta 60 IC (mA) 1 0.1 Collector current (μA) Collector dark current ID IC – VCE 80 10 0.01 50 40 30 20 15 10 20 5 0.001 IF= 2 mA 0 0.0001 0 20 40 60 Ambient temperature Ta 0 100 2 4 6 8 Collector-emitter voltage (℃) IC – VCE 30 VCE 10 (V) IC – IF 100.00 50 30 20 15 10.00 (mA) IC 20 Collector current IC 10 10 5 Collector current (mA) 80 IF= 2 mA 0 0.0 0.2 0.4 0.6 0.8 Collector-emitter voltage VCE 1.0 1.2 1.00 (V) 0.10 IC /IF – IF 1000 Current transfer ratio IC / IF (%) Ta = 25°C VCE = 5V VCE = 0.4V 0.01 0.1 100 1 Forward current 10 10 IF 100 (mA) Ta = 25°C VCE = 5V VCE = 0.4V 1 0.1 1 Forward current 10 IF 100 (mA) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 13 2019-03-11 TLP781/TLP781F IC – Ta 100 IC = 1 mA 10mA Collector-emitter saturation voltage VCE(sat) (V) IC (mA) Collector current IF = 5 mA VCE = 5V 20mA 5mA 10 VCE(sat) – Ta 0.20 1mA 1 IF= 0.5 mA 0.1 0 0.16 0.12 0.08 0.04 0.00 -40 -20 0 20 40 Ambient temperature Ta 60 80 -40 100 -20 0 20 40 Ambient temperature Ta (℃) 60 80 100 (℃) Switching Time – RL 1000 Ta = 25°C IF = 16mA VCC = 5V tOFF Switching time (μs) 100 tS 10 tON 1 1 10 100 Load resistance RL (kΩ) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 14 2019-03-11 TLP781/TLP781F RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”.  TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.  This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.  Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.  PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). 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Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.  Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.  Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. https://toshiba.semicon-storage.com/ © 2019 Toshiba Electronic Devices & Storage Corporation 15 2019-03-11