TLP833

TLP833(F) TOSHIBA Photointerrupter Infrared LED + Phototransistor TLP833(F) Lead(Pb)-Free Copiers, Printers, Fax Machines VCRS, Microwave Ovens, Air Conditioners Automatic Vending Machines Various Position Detection Sensors The TLP833(F) is a photointerrupter which incorporates a high radiant power GaAs LED and a fast−response Si phototransistor. The package has a deep gap. • • • • • • • • Package with deep gap (gap: 12 mm) Designed for direct mounting on printed circuit boards (positioning pins included). Gap: 5mm Resolution: Slit width 0.5mm High current transfer ratio: IC/IF = 5% (min) High temperature operation: Topr = 95°C (max) Package material: Polybutylene terephthalate (UL94−V−0) Detector impermeable to visible light TOSHIBA Weight: 1g (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current 25°C < Ta ≦ 85°C derating Ta > 85°C Reverse voltage Collector−emitter voltage Detector Emitter−collector voltage Collector power dissipation Collector power dissipation derating (Ta > 25°C) LED Symbol IF ΔIF/°C VR VCEO VECO PC ΔPC/°C IC Topr Tstg Tsol Rating 50 −0.33 −2 5 35 5 75 −1 50 −30~85 −40~100 260 Unit mA mA/°C V V V mW mW/°C mA °C °C °C Collector current Operating temperature range Storage temperature range Soldering temperature (5 s) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-10-01 TLP833(F) Markings Monthly lot number Month of manufacture (January to December denoted by letters A to L respectively) Year of manufacture (last digit of year of manufacture) Operating Ranges Characteristic Supply voltage Forward current Operating temperature Symbol VCC IF Topr Min ― ― −10 Typ. 5 ― ― Max 24 25 75 Unit V mA °C Optical Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Peak emission wavelength Detector Dark current Peak sensitivity wavelength Current transfer ratio Coupled Collector−emitter saturation voltage Rise time Fall time Symbol VF IR λP ID (ICEO) λP IC/IF VCE (sat) tr tf IF = 10mA VR = 5V IF = 10mA VCE = 24V, IF = 0 ― VCE = 2V, IF = 10mA IF = 20mA, IC = 0.5mA VCC = 5V, IC = 1mA RL = 1kΩ Test Condition Min 1.00 ― ― ― ― 5 ― ― (Note) ― Typ. 1.15 ― 940 ― 870 ― 0.1 15 15 Max 1.30 10 ― 0.1 ― 100 0.35 ― ― Unit V μA nm μA nm % V μs (Note): Switching time measurement circuit and waveform VCC VOUT RL IF IF VOUT 90% 10% td tr ts tf 2 2007-10-01 TLP833(F) Precautions 1. Clean only the soldered part of the leads. Do not immerse the entire package in the cleaning solvent. 2. The package is made of polybutylene−terephthalate. Oil or chemicals may cause the package to melt or crack. Care must be taken in relation to the environment in which the device is to be installed. 3. Mount the device on a level surface. 4. Keep the device away from external light. Although the phototransistor is of low optical sensitivity, the device may malfunction if external light with a wavelength of 700 nm or more is allowed to impinge on it. 5. Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1 : 1. I C /I F (t) I C /I F (0) P (t) =O PO (0) 3 2007-10-01 TLP833(F) Package Dimensions Unit: mm Weight: 1 g (typ.) Pin Connection 1 2 1. 2. 3. 4. Anode Cathode Collector Emitter 4 A 2.0±0.1 B 1.34±0.04 1.34±0.04 4−(R0.1) Φ1.2±0.1 (0.1) (C0.2) 3 2.3±0.1 4 2007-10-01 TLP833(F) IF – Ta 80 80 PC – Ta Allowable forward current IF (mA) 60 Allowable collector power dissipation PC (mW) 20 40 60 80 100 60 40 40 20 20 0 0 0 0 20 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IF – V F 50 (typ.) 100 Ta=25°C IC / IF – IF (mA) 30 50 VCE = 2 V VCE = 0.4 V Current transfer ratio IC / IF (%) 30 sample 2 10 sample 1 Forward current IF 10 5 Ta=75°C 3 50 25 5 3 0 −25 1 3 5 10 30 50 100 1.2 1.3 1.4 1 0.8 0.9 1.0 1.1 Forward voltage VF (V) Forward current IF (mA) IC – IF 10 5 Ta=25°C VCE = 2 V VCE = 0.4 V 6 Ta = 25 °C IC – VCE (typ.) 5 20 (mA) 3 sample 2 sample 1 1 (mA) Collector current IC Collector current IC 4 15 3 10 2 IF=5mA 0.5 0.3 1 0.1 1 3 5 10 30 50 100 0 0 2 4 6 8 10 12 Forward current IF (mA) Collector-emitter voltage VCE (V) 5 2007-10-01 TLP833(F) Relative IC – Ta 1.2 (typ.) 5 ID(ICEO) – Ta (typ.) Relative collector current 1.0 0.8 0.6 0.4 VCE = 2 V IF = 20 mA IF = 10 mA IF = 5 m A 1 Dark current ID(ICEO) (μA) VCE = 24 V 10 10−1 5 0.2 −40 10−2 −20 0 20 40 60 80 100 Ambient temperature Ta (°C) 10−3 10−4 0 20 40 60 80 100 120 Ambient temperature Ta (°C) VCE(sat) – Ta 0.20 IC = 0.5 mA IF = 20 mA (typ.) Collector-emitter saturation voltage VCE(sat) (V) 0.16 0.12 0.08 0.04 Switching Time Test Circuit VCC RL VOUT IF IF VOUT td tr 90% 10% tf ts 0 −40 −20 0 20 40 60 80 100 Ambient temperature Ta (°C) Switching Characteristics (non saturated operation) 500 300 Ta = 25 °C VCC = 5 V VOUT = 1 V 100 tr･tf (typ.) 3000 Ta = 25 °C IF = 20 mA Switching Characteristics (saturated operation) tf (typ.) 1000 V CC = 5 V Switching time (μs) 500 VOUT ≧ 4.65V 300 ts Switching time (μs) 50 30 td ts 100 50 30 10 tr 10 5 3 1 0.5 0.3 0.1 5 3 1 0.3 0.5 1 3 5 10 30 50 3 5 10 30 50 100 td 300 500 Load resistance RL (kΩ) Load resistance RL (kΩ) 6 2007-10-01 TLP833(F) Detection Position Characteristics(1) 1.2 (typ.) 1.2 Detection Position Characteristics (2) IF=10mA VCE=2V Ta=25°C Shutter (typ.) 1.0 IF = 10mA VCE = 2V Ta = 25°C 1.0 Relative collector current 0.8 Relative collector current 0.6 −0 d Shutter + 0.8 0.6 d 0.4 0.4 Detection Position d=0±0.3mm Detection Position d=12−1.1mm +1.5 0.2 0.2 0 −3 0 −2 −1 0 1 2 3 4 10 11 12 13 14 15 16 Distance d (mm) Distance d (mm) Relative Positioning Of Shutter And Device For normal operation position the shutter and the device as shown in the figure below. By considering the device's detection direction characteristic and switching time, determine the shutter slit width and pitch. Shutter A A′ Unit in mm Center of sensor 13.5min 10.9max 12 Cross section between A and A′ 7 2007-10-01 RE ST RI CT IO NS O N PR O DU CT US E • 2007 0701EN TLP833(F) Th e inf or ma tio n co nta ine d he rei n is su bje ct to ch an ge wit ho ut not ice . • TO SH IB A is co nti nu all y wo rki ng to im pr ov e the qu alit y 8 2007-10-01