TPC8213-H(TE12LQ,M

TPC8213-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8213-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable-Equipment Applications • Small footprint due to small and thin package • High-speed switching • Small gate charge: QSW = 2.9 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 40 mΩ (typ.) • High forward transfer admittance: |Yfs| =11 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage VDSS 60 V Drain−gate voltage (RGS = 20 kΩ) VDGR 60 V Gate−source voltage VGSS ±20 V DC (Note 1) ID 5 Pulse (Note 1) IDP 20 PD (1) 1.5 PD (2) 1.1 PD (1) 0.75 PD 2) 0.45 Single-pulse avalanche energy (Note 4) EAS 90 mJ Avalanche current IAR 5 A Repetitive avalanche energy (Note 2a, Note 3b, Note 5) EAR 0.087 mJ Channel temperature Tch 150 ℃ Storage temperature range Tstg −55～150 ℃ Drain current Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) Single-device operation (Note 3a) Drain power dissipation Single-device value (t = 10 s) (Note 2b) at dual operation (Note 3b) A JEDEC ― JEITA ― TOSHIBA 2-6J1E Weight: 0.085 g (typ.) W Circuit Configuration W Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-17 TPC8213-H Thermal Characteristics Characteristic Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 83.3 Rth (ch-a) (2) 114 Rth (ch-a) (1) 167 Rth (ch-a) (2) 278 Unit °C/W Marking TPC8213 H Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: The channel temperature should not exceed 150°C during use. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 24 V, Tch = 25°C (Initial), L = 5 mH, RG = 25 Ω, IAR = 5.0 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: • on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-17 TPC8213-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cutoff current IDSS VDS = 60 V, VGS = 0 V — — 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 60 — — V V (BR) DSX Drain−source breakdown voltage ID = 10 mA, VGS = −20 V 45 — — Vth VDS = 10 V, ID = 1 mA 1.1 — 2.3 RDS (ON) VGS = 4.5 V, ID = 2.5 A — 45 56 RDS (ON) VGS = 10 V , ID = 2.5 A — 40 50 Forward transfer admittance |Yfs| VDS = 10 V , ID = 2.5 A 5.5 11 — Input capacitance Ciss — 625 — Reverse transfer capacitance Crss — 35 — Output capacitance Coss — 175 — — 4 — — 10 — Rise time Turn−on time tr VDS = 10 V, VGS = 0 V, f = 1 MHz ton Switching time Fall time Turn−off time Total gate charge (gate-source plus gate-drain) (Note 7) ID = 2.5 A 出力 10 V VGS 0V RL = 12 Ω Drain−source ON-resistance 4.7 Ω Gate threshold voltage tf toff Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge QSW 2 — — 19 — VDD ∼ − 48 V, VGS = 10 V, ID = 5 A ⎯ 11 ⎯ VDD ∼ − 48 V, VGS = 5 V, ID = 5 A ⎯ 6 ⎯ ⎯ 1.6 ⎯ ⎯ 2.4 ⎯ ⎯ 2.9 ⎯ Duty < = 1%, tw = 10 μs VDD ∼ − 48 V, VGS = 10 V, ID = 5 A mΩ S pF ns — VDD ∼ − 30 V V nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP — — — 20 A — — −1.2 V VDSF IDR = 5 A, VGS = 0 V 3 2006-11-17 TPC8213-H ID – VDS ID – VDS 10 20 3.75 Common source Ta = 25°C 3.5 Pulse test 8 6 3.25 6 ID 5 4.5 Drain current Drain current ID (A) 8 (A) 10 3 4 2.75 2 10 8 4.5 16 3.75 source Ta =25°C Common Pulse test 5 6 3.5 12 3.25 8 3 4 2.75 VGS = 2.5V 0 0 0.2 0.4 0.6 0.8 Drain-source voltage VDS VGS = 2.5V 0 1 1 0 (V) 2 ID – VGS Common source (V) VDS = 10 V Ta = 25℃ 0.4 Pulse test Pulse test VDS (A) 12 Drain-source voltage ID Drain current (V) VDS – VGS 8 100 Ta = −55°C 4 25 1 2 4 3 Gate-source voltage VGS 0.3 ID = 5 A 0.2 1.3 0 5 2.5 0.1 0 (V) 2 4 6 Gate-source voltage ⎪Yfs⎪ – ID (S) VDS 5 0.5 Common source 0 0 4 Drain-source voltage 20 16 3 8 10 VGS (V) 12 RDS (ON) – ID 100 1000 Common source 10 Drain-source ON-resistance RDS (ON) (mΩ) Forward transfer admittance |Yfs| Ta = 25°C Ta = −55°C 25 100 1 Common source Pulse test 100 4.5 VGS = 10 V 10 VDS = 10 V 0.1 0.1 Pulse test 1 Drain current 10 ID 1 0.1 100 (A) 1 Drain current 4 10 ID 100 (A) 2006-11-17 TPC8213-H RDS (ON) – Ta 100 100 Common source Ta = 25°C Pulse test Pulse test ID = 5A 80 Drain reverse current IDR (A) Drain-source ON-resistance RDS (ON) (mΩ) Common source IDR – VDS 1.3A,2.5A 60 40 20 VGS = 4.5 V ID = 1.3A,2.5A,5A 10 10 3 5 1 VGS = 10 V 1 0 VGS = -1 V 0 −80 −40 0 40 80 Ambient temperature 120 Ta 0.1 0 160 (°C) −0.2 −0.4 −0.8 Drain-source voltage Capacitance – VDS 10000 −0.6 −1.0 VDS (V) 80 120 −1.2 Vth – Ta 2.5 Common source VGS = 0 V 2 Gate threshold voltage Vth (V) Ta = 25°C Ciss 1000 Capacitance C (pF) f = 1 MHz Coss 100 Crss 1.5 1 Common source ソース接地 0.5 10VV VDS DS==10 mA IDD== 11mA Pulse test パルス測定 10 VDS (V) −40 1.2 (2) 0.8 (V) (3) (4) 0.4 0 0 40 80 Ambient temperature (°C) 60 Device mounted on a Glass-epoxy board (a)(Note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation(Note 3b) Device mounted on a glass-epoxy board(b)(Note 2b) (3)Single-device operation(Note 3a) (4)Single-device value at dual operation(Note 3b) t=10s VDS (1) Ta 160 Dynamic input / output characteristics Drain-source voltage Drain power dissipation PD (W) 1.6 40 Ambient temperature PD – Ta 2 0 120 Ta 50 VDS VDD = 12 V 40 5 8 6 48 Common source 20 Ta = 25°C 10 2 Pulse test 4 4 ID = 5 A VGS 8 Total gate charge (°C) 10 24 30 0 0 160 12 0 16 12 Qg (V) Drain-source voltage 100 VGS 1 0 −80 Gate-source voltage 10 0.1 (nC) 2006-11-17 TPC8213-H rth – tw Transient thermal impedance rth (℃/W) 1000 Single - pulse (4) (3) (2) 100 (1) 10 Device mounted on a glass-epoxy board (a) (note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation (Note 3b) 1 Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area 100 Single-device value at dual operation (note 3b) Drain current ID (A) ID max (Pulse) * t=1ms * 10 10ms * 1 * Single - pulse Ta=25℃ Curves must be derated linearly with increase in temperature. 0.1 0.1 1 Drain-source voltage VDSS max 10 VDS 100 (V) 6 2006-11-17 TPC8213-H RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-17