TPCA8016-H

TPCA8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8016-H High-Efficiency DC／DC Converter Applications 0 .5±0.1 8 1.27 0.4±0.1 5 Unit: mm 0.05 M A 6.0±0.3 • • • • • • • Small footprint due to small and thin package High-speed switching Small gate charge: Qsw = 6.6 nC (typ.) Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 40 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 5.0±0.2 0.15±0.05 1 5.0±0.2 0.95±0.05 4 0.595 A 0.166±0.05 S 1 0.05 S 4 1.1±0.2 0.6±0.1 4.25±0.2 Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD Rating 60 60 ±20 25 75 45 2.8 Unit V V V A 1,2,3：SOURCE 5,6,7,8：DRAIN 8 5 0.8±0.1 4：GATE JEDEC JEITA TOSHIBA ⎯ ⎯ 2-5Q1A Pulsed (Note 1) Drain power dissipation (Tc = 25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range W W Weight: 0.068 g (typ.) PD 1.6 W Circuit Configuration 8 7 6 5 EAS IAR EAR Tch Tstg 45 25 2.7 150 −55 to 150 mJ A mJ °C °C 1 2 3 4 Note: For Notes 1to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-17 3.5±0.2 Absolute Maximum Ratings (Ta = 25°C) TPCA8016-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 44.6 °C/W Symbol Rth (ch-c) Max 2.78 Unit °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8016-H ※ Type Lot No. Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω , IAR = 25 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2006-11-17 TPCA8016-H Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“Miller”) charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD ∼ 48 V, VGS = 10 V, ID = 25 A − Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss Rg tr ton VGS 10 V 0V 4.7 Ω ID = 13 A VOUT RL =2.3Ω VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −20 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 13 A VGS = 4.5 V, ID = 13 A VDS = 10 V, ID = 13 A Min ⎯ ⎯ 60 45 1.1 ⎯ ⎯ 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 16 20 40 1375 70 340 1.0 4 10 3 19 22 12 4.6 4.2 6.6 Max ±10 10 ⎯ ⎯ 2.3 21 26 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC Ω pF S Unit µA µA V V mΩ VDD ∼ 30 V − Duty < 1%, tw = 10 µs = VDD ∼ 48 V, VGS = 10 V, ID = 25 A − VDD ∼ 48 V, VGS = 5 V, ID = 25 A − Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = 25 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max 75 −1.2 Unit A V 3 2006-11-17 TPCA8016-H ID – VDS 20 8 10 50 4 Common source Ta = 25°C Pulse test 3.5 10 8 4.5 ID – VDS 4 Common source Ta = 25°C Pulse test Drain current ID (A) Drain current ID (A) 16 5 12 4.5 6 3.7 40 6 5 3.8 3.3 30 3.5 20 3.3 10 8 3.1 4 VGS = 2.8 V 0 0 0.2 0.4 0.6 0.8 1.0 VGS = 3 V 0 0 1 2 3 4 5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 100 1.0 VDS – VGS Common source Drain-source voltage VDS (V) Common source 80 VDS = 10 V Pulse test Ta = 25℃ 0.8 Pulse test Drain current ID (A) 60 0.6 ID = 25 A 40 0.4 13 0.2 6.3 20 25 100 Ta = −55°C 0 0 2 4 6 8 0 0 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID Forward transfer admittance |Yfs| (S) 100 Common source VDS = 10 V Pulse test Ta = −55°C 25 100 100 Common source Ta = 25°C RDS (ON) – ID Drain-source ON-resistance RDS (ON) (mΩ) Pulse test 4.5 V 10 VGS = 10 V 10 1 0.1 0.1 1 10 100 1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 4 2006-11-17 TPCA8016-H RDS (ON) – Ta 50 1000 IDR – VDS Common source (A) Common source Pulse test Drain-source ON-resistance RDS (ON) (mΩ) Drain reverse current IDR 40 13 6.3 30 25 Ta = 25°C Pulse test 100 10 5 4.5 10 3 1 25 VGS = 4.5 V 20 ID = 6.3 A 10 VGS = 10 V 0 −80 13 1 −40 0 40 80 120 160 0.1 0 −0.2 −0.4 −0.6 VGS = 0 V −0.8 −1.0 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 3 Vth – Ta (V) (pF) Ciss 1000 Gate threshold voltage Vth 2 Capacitance C Coss 100 Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 0.1 1 10 Crss 1 Common source VDS = 10V ID = 1mA Pulse test 0 −80 −40 0 40 80 120 160 100 Drain-source voltage VDS (V) Ambient temperature Ta (°C) Dynamic input/output characteristics 50 VDS 40 Drain-source voltage VDS 30 15 20 24 VGS 10 10 VDS = 48 V 5 0 0 10 20 0 30 Total gate charge Qg (nC) Gate-source voltage VGS (V) Common source 25 ID = 25 A Ta = 25°C Pulse test 20 (V) 5 2006-11-17 TPCA8016-H rth – tw rth (°C/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) 100 (3) Tc = 25°C (2) Transient thermal impedance (1) 10 (3) 1 Single - pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) PD – Ta 3 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t ＝ 10s PD – Tc 50 (W) 2.5 (1) (W) Drain power dissipation PD 40 30 20 10 0 Drain power dissipation PD 2 (2) 1.5 1 0.5 0 0 40 80 120 160 0 40 80 120 160 Ambient temperature Ta (°C) Case temperature Tc (°C) Safe operating area 100 ID max (Pulse) * ID max (Continuous) 10 t = 1 ms * 10 ms * Drain current ID (A) DC Operation Tc = 25°C 1 * 0.1 Single - pulse Tc = 25°C Curves must be derated linearly with increase in temperature. VDSS max 0.01 0.1 1 10 100 Drain-source voltage VDS (V) 6 2006-11-17 TPCA8016-H 7 2006-11-17