TPCP8F01

TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 2.4±0.1 0.475 1 4 • • • High DC current gain: hFE = 200 to 500 (IC = −0.5 A) (PNP Transistor) Low collector-emitter saturation: VCE (sat) = −0.19 V (max) (PNP Transistor) High-speed switching: tf = 40 ns (typ.) (PNP Transistor) 0.65 2.9±0.1 B A 0.05 M B 0.8±0.05 S 0.025 S 0.17±0.02 0.28 +0.1 -0.11 +0.13 1.12 -0.12 Absolute Maximum Ratings (Ta = 25°C) Transistor Characteristics Collector-base voltage Symbol VCBO VCEO VEBO DC Pulse IC ICP IB PC (Note 1) Tj Rating −30 −20 −7 −3.0 −5.0 −250 1.0 150 Unit V 1.Source 2.Collector 3.Collector 4.Collector 5.Emitter 6.Base 7.Gate 8.Drain 1.12 +0.13 -0.12 0.28 +0.1 -0.11 JEDEC JEITA ― ― 2-3V1B Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature V V A mA W °C TOSHIBA Weight : 0.017g (Typ.) MOS FET Characteristics Drain-source voltage Gate-source voltage Drain current Channel temperature DC Pulse Symbol VDSS VGSS ID IDP Tj Rating 20 ±10 100 200 150 Unit V V mA °C Note 1: Mounted on FR4 board (glass epoxy, 1.6mm thick, Cu area: 645mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-13 2.8±0.1 ○ Swtching Applications ○ Load Switch Applications ○ Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive Unit: mm 0.33±0.05 0.05 M A 8 5 TPCP8F01 Common Absolute Maximum Rating (Ta = 25°C) Characteristics Storage temperature range Symbol Tstg Rating −55 to 150 Unit °C Figure 2 Marking (Note 3) 8 7 6 5 8F01 * Type Lot No. (Weekly code) 1 2 3 4 Note 3 : Black round marking "・" located on the left lower side of parts number marking "8F01" indicates terminal No.1 * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2006-11-13 TPCP8F01 Electrical Characteristics (Ta = 25°C) Transistor Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector Output Capacitance Rise time Switching time Storage time Fall time 20us IB2 IB1 Vin IB2 IB1 RL Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = −30 V, IE = 0 VEB = −7 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.5 A VCE = −2 V, IC = −1.6 A IC = −1.6 A, IB = −53 mA IC = −1.6 A, IB = −53 mA VCB = −10 V, IE = 0, f = 1MHz See Figure 3 circuit diagram VCC ∼ −12 V, RL = 7.5 Ω − −IB1 = IB2 = −53 mA Min ⎯ ⎯ −20 200 100 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 28 70 150 40 Max −100 −100 ⎯ 500 ⎯ −0.19 −1.10 ⎯ ⎯ ⎯ ⎯ Unit nA nA V V V pF ns Figure 3. Switching Time Test Circuit & Timing Chart Vout Duty Cycle