TPCP8H02

TPCP8H02 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H02 2.4±0.1 0.475 1 4 ・Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive ・High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (NPN transistor) ・Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) (NPN transistor) ・High-speed switching: tf = 25 ns (typ.) (NPN transistor) 0.65 2.9±0.1 B A 0.05 M B 0.8±0.05 S 0.025 S 0.17±0.02 0.28 +0.1 -0.11 +0.13 Absolute Maximum Ratings (Ta = 25°C) Transistor Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature (NPN) DC (Note 1) Symbol VCBO VCEX VCEO VEBO IC ICP IB PC (Note 2) Tj Rating 50 50 30 6 3.0 5.0 0.3 1.0 150 Unit V V V A A W °C 1. SOURCE 2. COLLECTOR 3. COLLECTOR 4. COLLECTOR 1.12 -0.12 1.12 +0.13 -0.12 0.28 +0.1 -0.11 5. BASE 6. EMITTER 7. GATE 8. DRAIN JEDEC JEITA TOSHIBA 2-3V1E Pulse (Note 1) Circuit Configuration 8 7 6 5 MOS FET Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Channel Temperature DC Pulse Symbol VDSS VGSS ID IDP Tch Rating 20 ±10 100 200 150 Unit V V 1 mA °C 2 3 4 Note 1: Ensure that the junction (channel) temperature does not exceed 150℃. Note 2: Device mounted on a glass-epoxy board (FR-4,25.4×25.4×1.6 mm , Cu area: 645 mm2) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-13 2.8±0.1 STROBE FLASH APPLICATIONS HIGH-SPEED SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS 0.33±0.05 0.05 M A 8 5 TPCP8H02 Common Absolute Maximum Rating (Ta = 25°C) Characteristics Storage temperature range Symbol Tstg Rating −55 to 150 Unit °C Marking (Note 4) 8H02 * Type Lot No. (Weekly code) Note 4: The mark ” ” on the lower left of the marking indicates Pin 1. * Weekly code (three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (Last digit of the calendar year) Electrical Characteristics (Ta = 25°C) Transistor Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = 50 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.3 A VCE = 2 V, IC = 1.0 A IC = 1.0 A, IB = 33 mA IC = 1.0 A, IB = 33 mA VCB = 10V, IE = 0, f=1MHz See Figure 1 circuit diagram. VCC ≒ 12 V, RL = 12 Ω IB1 = -IB2 = 33 mA Min ⎯ ⎯ 30 250 120 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 18 40 320 25 Max 100 100 ⎯ 400 ⎯ 140 1.1 ⎯ ⎯ ⎯ ⎯ ns mV V pF Unit nA nA V Figure 1 Switching Time Test Circuit & Timing Chart VCC 20 μs IB1 IB2 Duty cycle < 1% Input IB1 IB2 RL Output 2 2006-11-13 TPCP8H02 MOS FET Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V(BR)DSS IDSS V th ｜Yfs｜ Test Condition VGS = ±10 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3V, ID = 0.1mA VDS = 3V, ID = 10mA ID = 10mA , VGS = 4V Drain-source ON-resistance RDS(ON) ID = 10mA , VGS = 2.5V ID = 1mA , VGS = 1.5V Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time Ciss Crss Coss ton toff See Figure 2 circuit diagram. VDD ≒ 3V, RL = 300 Ω VGS = 0 to 2.5V VDS = 3V, VGS = 0, f=1MHz Min ⎯ 20 ⎯ 0.6 40 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 1.5 2.2 5.2 9.3 4.5 9.8 70 125 Max ±1 ⎯ 1 1.1 ⎯ 3 4 15 ⎯ ⎯ ⎯ ⎯ ⎯ ns pF Ω Unit μA V μA V mS Figure 2 Switching Time Test Circuit & Timing Chart Vout Vin Rg RL 2.5V 0 10us Gate Pulse Width 10μs, tr, tf