TPCS8105

TPCS8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8105 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 9.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm 1,2,3 4 5,6,7,8 Source Gate Drain Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −10 −40 1.1 0.6 26 −10 0.11 150 −55 to 150 Unit V V V A W W mJ A mJ °C °C JEDEC JEITA TOSHIBA ― ― 2-3R1F Weight: 0.035 g (typ.) Circuit Configuration 8 7 6 5 Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range 1 2 3 4 Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-16 TPCS8105 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 114 208 Unit °C/W °C/W Marking (Note 5) Part No. (or abbreviation code) S8105 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = −10 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: ○ on lower right of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for the first week of year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) 2 2006-11-16 TPCS8105 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“miller”) charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 0V VGS −10 V 4.7 Ω ID = −5 A VOUT RL = 3 Ω VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = −30 V, VGS = 0 V ID = −10 mA, VGS = 0 V ID = −10 mA, VGS = 20 V VDS = −10 V, ID = −1 mA VGS = −4 V, ID = −5 A VGS = −10 V, ID = −5 A VDS = −10 V, ID = −5 A Min ⎯ ⎯ −30 −15 −0.8 ⎯ ⎯ 11 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VDD ∼ −24 V, VGS = 10 V, − ID = −10 A ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 13.5 9.6 23 5710 560 590 18 23 109 396 107 12 20 Max ±10 −10 ⎯ ⎯ −2.0 19.5 13.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ nC pF Unit μA μA V V mΩ S VDD ∼ −15 V − Duty < 1%, tw = 10 μs = Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = −10 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max −40 1.2 Unit A V 3 2006-11-16 TPCS8105 ID – VDS −10 −10 −5 −2.5 −2.4 Common source Ta = 25°C Pulse test −2.3 −2.2 −20 −10 −5 −3 ID – VDS −2.6 −2.5 Common source Ta = 25°C Pulse test −2.4 (A) ID −6 ID Drain current (A) −8 −3 −2.6 −16 −12 −2.3 −8 −2.2 −4 −2.1 Drain current −4 −2.1 −2 VGS = −2 V 0 0 −0.2 −0.4 −0.6 −0.8 −1.0 0 0 VGS = −2 V −0.4 −0.8 −1.2 −1.6 −2.0 Drain−source voltage VDS (V) Drain−source voltage VDS (V) ID – VGS −20 −0.5 VDS – VGS VDS (V) Common source VDS = −10 V Pulse test Common source Ta = 25°C Pulse test ID (A) −16 −0.4 100 −8 25 −4 Ta = −55°C Drain−source voltage −12 −0.3 Drain current −0.2 −0.1 −2.5 ID = −11 A −5.5 0 0 −1 −2 −3 −4 −5 0 0 −4 −8 −12 −16 −20 Gate−source voltage VGS (V) Gate−source voltage VGS (V) |Yfs| – ID 100 Common source VDS = −10 V Pulse test 100 Ta = −55°C 100 10 RDS (ON) – ID Common source Ta = 25°C Pulse test |Yfs| (S) Forward transfer admittance 25 Drain-source ON resistance RDS (ON) (mΩ) VGS = −4 V 10 −10 1 0.1 −0.1 −1 −10 −100 1 −1 −10 −100 Drain current ID (A) Drain current ID (A) 4 2006-11-16 TPCS8105 RDS (ON) – Ta 20 Common source Pulse test 16 −5 12 VGS = −4 V ID = −11 A −2.5 −5 −100 IDR – VDS (A) Drain−source ON resistance RDS (ON) (mΩ) ID = −11 A −2.5 −10 −10 −5 −3 −1 8 Drain reverse current IDR −1 VGS = 0 V 4 VGS = −10 V 0 −80 −40 0 40 80 120 160 −0.1 0 Common source Ta = 25°C Pulse test 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (°C) Drain−source voltage VDS (V) Capacitance – VDS 10000 −2.5 Vth – Ta Common source VDS = −10 V −2.0 ID = −1 mA Pulse test −1.5 (pF) Capacitance Coss Crss Gate threshold voltage 1000 C Vth (V) Ciss −1.0 100 Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 −0.1 −1 −10 −100 −0.5 0 −80 −40 0 40 80 120 160 Ambient temperature Ta (°C) Drain−source voltage VDS (V) PD – Ta 2.0 Dynamic input/output characteristics −30 −12 (W) PD t = 10 s 1.2 (1) 0.8 −12 −20 VDS −12 −15 −6 −10 VGS Common source ID = −11 A Ta = 25°C Pulse test −5 −2 −4 VDD = −24 V −6 −8 Drain power dissipation Drain-source voltage (2) 0.4 0 0 25 50 75 100 125 150 175 0 0 20 40 60 80 100 120 0 140 Ambient temperature Ta (°C) Total gate charge Qg (nC) 5 2006-11-16 Gate−source voltage VGS 1.6 (2) Device mounted on a glass-epoxy board (b) (Note 2b) (V) −25 VDD = −24 V −10 −6 VDS (V) (1) Device mounted on a glass-epoxy board (a) (Note 2a) TPCS8105 rth − tw 1000 rth (°C/W) Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) 100 (4) Single-device value at dual operation (Note 3b) (2) (1) Transient thermal impedance 10 1 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area 100 ID max (Pulse)* 1 m s* Drain current ID (A) 10 10 ms* 1 0.1 0.01 0.01 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 1 VDSS max 10 100 Drain−source voltage VDS (V) 6 2006-11-16 TPCS8105 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-16