TMC1340-SO

POWER MOSFETs FOR STEPPER MOTORS INTEGRATED CIRCUITS TMC1340-SO DATASHEET Quad Complementary N & P-Channel 30V Enhancement Mode Power MOSFET with extremely low onresistance. High energy efficiency and good thermal performance. APPLICATIONS TMC1340-SO MOSFETs fit best with TRINAMIC 2-phase bipolar stepper motor drivers: TMC262: up to 3A RMS motor current with 2xTMC1340-SO TMC248: up to 2.5A RMS motor current with 2xTMC1340-SO TMC249: up to 2.5A RMS motor current with 2xTMC1340-SO PRODUCT SUMMARY BVDSS RDS(ON) ID FEATURES N-CH P-CH DESCRIPTION 30V 33mΩ 5.5A -30V 55mΩ -4.1A The TMC1340-SO N & P channel MOSFET full bridge (H-bridge) device achieves a very low on-state resistance combined with fastest switching performance. This device is intended for power conversion and power management applications that require high energy efficiency and power density while keeping costs down. BENEFITS AND N & P-Channel MOSFET Full Bridge Device Simple Drive Requirement Low On-Resistance Good Thermal Performance Fast Switching Performance for quick motor reaction The SO-8 5x6 package is widely used for commercial and industrial surfacemounted applications, and it is well suited for, e.g., motor driver circuits. SO-8 package, 5x6 mm RoHS Compliant and Halogen-Free TMC262 WITH 4X TMC1340-SO MOSFETS TMC262 P N P P N N Motor coil B 10R 10R RSENSE Order code TMC1340-SO SRB +VM TMC1340 Motor coil A N LB1 P HB1 BMB1 BMB2 HB2 LB2 LA2 HA2 BMA2 BMA1 HA1 LA1 SRA +VM TMC1340 RSENSE Description N and P-channel enhancement mode power MOSFET TRINAMIC Motion Control GmbH & Co. KG Hamburg, Germany Size 5 x 6 mm2 TMC1340-SO DATASHEET (Rev. 1.02 / 2014-JUN-04) 2 Table of Contents 1 PIN ASSIGNMENTS ................................................................................................... 3 2 ABSOLUTE MAXIMUM RATINGS ................................................................................................... 3 3 THERMAL DATA ................................................................................................... 3 4 ELECTRICAL CHARACTERISTICS ................................................................................................... 4 4.1 N-CH @TJ=25°C (UNLESS OTHERWISE SPECIFIED) ................................................................................................... 4 4.1.1 Source-Drain Diode ....................................................................................................................................... 4 4.2 P-CH @TJ=25°C (UNLESS OTHERWISE SPECIFIED) ................................................................................................... 5 4.2.1 Source-Drain Diode ....................................................................................................................................... 5 5 N-CHANNEL DIAGRAMS ................................................................................................... 6 6 P-CHANNEL DIAGRAMS ................................................................................................... 8 7 PACKAGE MECHANICAL DATA ................................................................................................. 10 7.1 7.2 7.3 DIMENSIONAL DRAWINGS PACKAGE MARKING INFORMATION PACKAGE CODE ................................................................................................. 10 ................................................................................................. 10 ................................................................................................. 10 8 DISCLAIMER ................................................................................................. 11 9 ESD SENSITIVE DEVICE ................................................................................................. 11 10 TABLE OF FIGURES ................................................................................................. 12 11 REVISION HISTORY ................................................................................................. 12 www.trinamic.com TMC1340-SO DATASHEET (Rev. 1.02 / 2014-JUN-04) 3 1 Pin Assignments P1S N2G N1S/N2S N1DP1D N1G P1G SO-8 P2G P2S P2G P1N1D P2N2D N2D/P2D P1S/P2S P1G N1G N2G N1S N2S Figure 1.1 TMC1340-SO pin assignments and internal circuit 2 Absolute Maximum Ratings The maximum ratings may not be exceeded under any circumstances. Operating the circuit at or near more than one maximum rating at a time for extended periods shall be avoided by application design. Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current*2 Continuous Drain Current*2 Pulsed Drain Current*1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Symbol VDS VGS ID@TA = 25°C ID@TA = 70°C IDM PD@TA = 25°C TSTG TJ N-channel P-channel 30 -30 ±20 ±20 5.5 -4.1 4.4 -3.3 20 -20 1.38 -55 to 150 -55 to 150 Unit V V A A A W °C °C *1 Pulse width is limited by maximum junction temperature. *2 Surface mounted on 1 in² copper pad of FR4 board, t ≤ 10sec; 186˚C/W when mounted on min. copper pad. 3 Thermal Data Parameter Max. Thermal Resistance, Junction-ambient* Symbol Rthj-a Value 90 Unit °C/W * Surface mounted on 1 in² copper pad of FR4 board, t ≤ 10sec; 186˚C/W when mounted on min. copper pad. www.trinamic.com TMC1340-SO DATASHEET (Rev. 1.02 / 2014-JUN-04) 4 4 Electrical Characteristics 4.1 N-CH @tj=25°C (unless otherwise specified) Parameter Drain-Source Breakdown Voltage Symbol BVDSS Static Drain-Source On-Resistance* RDS(ON) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (tj=70˚C) Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance * Pulse width ≤ 300µs, duty cycle ≤ VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss 2% Test Conditions VGS=0V, ID=250µA VGS=10V, ID=5A VGS=4.5V, ID=3A VDS= VGS, ID=250µA VDS= 10V, ID=5A VDS= 30V, VGS=0V Min 30 Typ Max 1 Unit V mΩ mΩ V S µA 25 µA ±100 10 nA nC nC nC ns ns ns ns pF pF pF 33 60 3 1 5.2 VDS= 24V, VGS=0V VDS= 0V, VGS=±20V ID=5A VDS=15V VGS=4.5V VDS=15V ID=1A RG=6Ω, VGS=10V RD=15Ω VGS=0V VDS=25V f=1.0MHz 7 2 4 7 10 18 8 600 229.8 94 960 4.1.1 Source-Drain Diode Parameter Forward On Voltage* Reverse Recovery Time Reverse Recovery Charge * Pulse width ≤ 300µs, duty cycle ≤ www.trinamic.com Symbol VSD trr Qrr 2% Test Conditions VGS=0V, IS=1.2A VGS=0V, IS=1.7A dl/dt=100A/µs Min Typ 21 16 Max 1.2 Unit V ns nC TMC1340-SO DATASHEET (Rev. 1.02 / 2014-JUN-04) 5 4.2 P-CH @tj=25°C (unless otherwise specified) Parameter Drain-Source Breakdown Voltage Symbol BVDSS Static Drain-Source On-Resistance* RDS(ON) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (tj=70˚C) Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time* Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance * Pulse width ≤ 300µs, duty cycle ≤ VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg 2% Test Conditions VGS=0V, ID=-250µA VGS=-10V, ID=-4A VGS=-4.5V, ID=-2A VDS= VGS, ID=-250µA VDS= -10V, ID=-4A VDS= -30V, VGS=0V Min -30 Typ Max -1 Unit V mΩ mΩ V S µA -25 µA ±100 11 nA nC nC nC ns ns ns ns pF pF pF Ω 55 100 -3 -1 4 VDS= -24V, VGS=0V VDS= 0V, VGS=±20V ID=-4A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3Ω VGS=-10V RD=15Ω VGS=0V VDS=-25V f=1.0MHz f=1.0MHz 8 1.5 4 6.6 7.7 22 9.3 570 80 75 6 790 12 4.2.1 Source-Drain Diode Parameter Forward On Voltage* Reverse Recovery Time Reverse Recovery Charge * Pulse width ≤ 300µs, duty cycle ≤ www.trinamic.com Symbol VSD trr Qrr 2% Test Conditions VGS=0V, IS=-1.2A VGS=0V, IS=-4A dl/dt=100A/µs Min Typ 18 10 Max -1.2 Unit V ns nC TMC1340-SO DATASHEET (Rev. 1.02 / 2014-JUN-04) 6 5 N-Channel Diagrams Figure 5.1 Typical output characteristics Figure 5.2 Typical output characteristics Figure 5.3 On-resistance v.s. gate voltage Figure 5.4 Normalized on-resistance v.s. junction temperature Figure 5.5 Forward characteristic of reverse diode Figure 5.6 Gate threshold voltage v.s. junction temperature www.trinamic.com TMC1340-SO DATASHEET (Rev. 1.02 / 2014-JUN-04) 7 N-Channel Diagrams Figure 5.7 Gate charge characteristics Figure 5.8 Typical capacitance characteristics Figure 5.9 Maximum safe operating area Figure 5.10 impedance Figure 5.11 Switching time waveforms Figure 5.12 Gate Charge waveform www.trinamic.com Effective transient thermal TMC1340-SO DATASHEET (Rev. 1.02 / 2014-JUN-04) 8 6 P-Channel Diagrams Figure 6.1 Typical output characteristics Figure 6.3 On-resistance v.s. gate voltage Figure 6.5 Forward characteristic of reverse diode www.trinamic.com Figure 6.2 Typical output characteristics Figure 6.4 Normalized on-resistance v.s. junction temperature Figure 6.6 Gate Threshold voltage v.s. junction temperature TMC1340-SO DATASHEET (Rev. 1.02 / 2014-JUN-04) 9 P-Channel Diagrams Figure 6.7 Gate charge characteristics Figure 6.8 Typical capacitance characteristics Figure 6.9 Maximum safe operating area Figure 6.10 Effective transient thermal impedance Figure 6.11 Switching time waveforms Figure 6.12 Gate charge waveform www.trinamic.com TMC1340-SO DATASHEET (Rev. 1.02 / 2014-JUN-04) 7 10 Package Mechanical Data 7.1 PQFN 5x6 Dimensional Drawings Note: All dimensions are in millimeters. Drawings are not to scale. The dimensions do not include mold protrusions. D 6 5 7 8 E1 1 2 e 3 E 4 Symbols A A1 B D E E1 e G F α B A A1 G Min 1.35 0.10 0.33 4.80 5.80 3.80 0.19 0.38 0° α F Figure 7.1 Dimensional drawings 7.2 Package Marking Information Part number Meet RoHS requirement for low volatage MOSFET only TMC1340 YWWSSS Package code Date code Y: last digit of year WW: week SSS: sequence Figure 7.2 Package marking information 7.3 Package Code Device TMC1340 www.trinamic.com Package PQFN 5x6 Temperature range -55° to +150°C Code/ Marking TMC1340-SO Nom Max 1.55 1.75 0.18 0.25 0.41 0.51 4.90 5.00 6.15 6.50 3.90 4.00 1.27 TYP 0.22 0.25 0.71 1.27 4° 8° TMC1340-SO DATASHEET (Rev. 1.02 / 2014-JUN-04) 11 8 Disclaimer TRINAMIC Motion Control GmbH & Co. KG does not authorize or warrant any of its products for use in life support systems, without the specific written consent of TRINAMIC Motion Control GmbH & Co. KG. Life support systems are equipment intended to support or sustain life, and whose failure to perform, when properly used in accordance with instructions provided, can be reasonably expected to result in personal injury or death. Information given in this data sheet is believed to be accurate and reliable. However no responsibility is assumed for the consequences of its use nor for any infringement of patents or other rights of third parties which may result from its use. Specifications are subject to change without notice. All trademarks used are property of their respective owners. 9 ESD Sensitive Device The TMC1340-SO is an ESD sensitive CMOS device sensitive to electrostatic discharge. Take special care to use adequate grounding of personnel and machines in manual handling. After soldering the devices to the board, ESD requirements are more relaxed. Failure to do so can result in defect or decreased reliability. www.trinamic.com TMC1340-SO DATASHEET (Rev. 1.02 / 2014-JUN-04) 12 10 Table of Figures Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure 1.1 TMC1340 pin assignments .............................................................................................................................. 3 5.1 Typical output characteristics ........................................................................................................................ 6 5.2 Typical output characteristics ........................................................................................................................ 6 5.3 On-resistance v.s. gate voltage ..................................................................................................................... 6 5.4 Normalized on-resistance v.s. junction temperature ............................................................................. 6 5.5 Forward characteristic of reverse diode .................................................................................................... 6 5.6 Gate threshold voltage v.s. junction temperature .................................................................................. 6 5.7 Gate charge characteristics ............................................................................................................................ 7 5.8 Typical capacitance characteristics ............................................................................................................... 7 5.9 Maximum safe operating area ...................................................................................................................... 7 5.10 Effective transient thermal impedance .................................................................................................... 7 5.11 Transfer characteristics ................................................................................................................................. 7 5.12 Maximum continuous drain current v.s. ambient temperature ........................................................ 7 6.1 Typical output characteristics ........................................................................................................................ 8 6.2 Typical output characteristics ........................................................................................................................ 8 6.3 On-resistance v.s. gate voltage ..................................................................................................................... 8 6.4 Normalized on-resistance v.s. junction temperature ............................................................................. 8 6.5 Forward characteristic of reverse diode .................................................................................................... 8 6.6 Gate Threshold voltage v.s. junction temperature ................................................................................. 8 6.7 Gate charge characteristics ............................................................................................................................ 9 6.8 Typical capacitance characteristics ............................................................................................................... 9 6.9 Maximum safe operating area ...................................................................................................................... 9 6.10 Effective transient thermal impedance .................................................................................................... 9 6.11 Transfer characteristics ................................................................................................................................. 9 6.12 Maximum continuous drain current v.s. ambient temperature ........................................................ 9 7.1 Dimensional drawings .................................................................................................................................. 10 7.2 Package marking information ..................................................................................................................... 10 11 Revision History Version Date Author Description SD – Sonja Dwersteg 1.00 1.01 1.02 2013-MAR-18 2014-MAY-19 2014-JUN-06 SD SD SD Table 11.1 Documentation revisions www.trinamic.com Initial version Dimensional drawings updated. Block diagram on front page corrected.