RB751V-40WSRRG

RB751V-40WS 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-323F B Features Low power loss, high current capability, low VF, low IR Surface device type mounting Moisture sensitivity level 1 Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code C A D E F Unit (mm) Min 1.15 2.30 0.25 1.60 0.80 0.05 Max 1.40 2.80 0.40 1.80 1.10 0.15 Unit (inch) Min 0.045 0.091 0.010 0.063 0.031 0.002 Max 0.055 0.110 0.016 0.071 0.043 0.006 Mechanical Data Case : Flat lead SOD-323F small outline plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Polarity : Indicated by cathode band Weight :4.6 ± 0.5 mg Marking Code : S8 Dimensions A B C D E F Pin Configuration Ordering Information Package Part No. Packing 3K / 7" Reel Marking S8 S8 Suggested PAD Layout SOD-323F RB751V-40WS RR SOD-323F RB751V-40WS RRG 3K / 7" Reel Dimensions X X1 Value (in mm) 0.710 2.900 0.403 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Y Maximum Ratings Type Number Power Dissipation Repetitive Peak Reverse Voltage Reverse Voltage (DC) Average Forward Current Non-Repetitive Peak Forward Surge Current (Note 1) Thermal Resistance (Junction to Ambient) Junction Temperature Storage Temperature Range Symbol PD VRRM VR IO IFSM RθJA TJ TSTG Value 200 40 30 30 0.2 500 125 -40~125 Units mW V V mA A °C/W °C °C Notes: 1. Test Condition : 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) 2. ESD sensitive product hankling required. 3. The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary despending on application. Version : B10 RB751V-40WS 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Electrical Characteristics Type Number Forward Voltage Reverse Leakage Current Junction Capacitance IF=1.0mA VR= 30V VR=1V, f=1.0MHz Symbol VF IR CJ Typical 2 Max 0.37 0.5 Units V uA pF Tape & Reel specification TSC label Top Cover Tape Item Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width Symbol K D A D1 D2 E F P0 P1 T W W1 Dimension(mm) 2.40 Max. 1.50 +0.10 178 ± 1 50 Min. 13.0 ± 0.5 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.10 0.6 Max. 8.30 Max. 14.4 Max. Carieer Tape Any Additional Label (If Required) W1 A D2 D1 User Direction of Feed Note 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min. to 0.5 mm max. The component cannot rote more than 10o within the determined cavity. Note 2: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders. Version : B10 RB751V-40WS 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Rating and Characteristic Curves FIG 1 Typical Forward Characteristics 100 300 250 200 150 100 50 0.01 0 0.2 0.4 0.6 0.8 1 0 0 20 40 60 80 o FIG 2 Admissible Power Dissipation Curve IF Forward Current (mA) 10 Ta=25 C o 1 0.1 Power Dissipation (mW) 100 120 140 VF Forward Voltage (V) Ambient Tempeatature ( C) FIG 3 Typical Junction Capacitance 5 10000 FIG. 4 Typical Reverse Characteristics Junction Capacitance(pF) 4 IR Leakage Current (nA) Ta=125o 1000 3 2 100 Ta=25o 1 0 0 2 4 6 8 10 12 14 10 0 5 10 15 20 25 30 35 Reverse Voltage (V) Reverse Voltage (V) Version : B10