TSB1132

TSB1132 Low Frequency PNP Transistor Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = - 32V Ic = - 1A VCE (SAT), =- 0.15V(typ.) @Ic / Ib =- 0.5A /- 50mA Features Low VCE (SAT). Excellent DC current gain characteristics Ordering Information Part No. TSB1132CY Packing Tape & Reel Package SOT-89 Marking BK Structure Epitaxial planar type. PNP silicon transistor Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 10mS, Duty