TSB1412CPRO

TSB1412 Low Vcesat PNP Transistor TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) -40V -30V -5A -0.5V @ IC / IB = -4A / -100mA Features ● ● Low VCE(SAT) -0.36 @ IC / IB = -4A / -100mA (Typ.) Complementary part with TSD2118 Ordering Information Part No. Package Packing Structure ● ● Epitaxial Planar Type PNP Silicon Transistor TSB1412CP RO TO-252 2.5Kpcs / 13” Reel TSB1412CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” is denote Halogen Free Product. Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single pulse, Pw=10ms DC Pulse Ta=25ºC Tc=25ºC Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit -40 -30 -6 -5 -10 (note) 1 10 +150 - 55 to +150 Unit V V V A W o o C C Electrical Specifications (TA=25oC unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Conditions IC = -50uA, IE = 0 IC = -1mA, IB = 0 IE = -50uA, IC = 0 VCB = -25V, IE = 0 VEB = -5V, IC = 0 IC / IB = -4A / -100mA VCE = -2V, IC = -500mA VCE =-6V, IC=-50mA, f=30MHz Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *hFE fT Cob Min -40 -30 -6 ---180 --- Typ ------0.36 -120 60 Max ----0.5 -0.5 -0.5 390 --- Unit V V V uA uA V MHz pF Output Capacitance VCB = -20V, f=1MHz * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% 1/4 Version: B11 TSB1412 Low Vcesat PNP Transistor Electrical Characteristics Curve (TA=25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Output Characteristics Figure 5. Output Characteristics Figure 6. Power Derating Curve 2/4 Version: B11 TSB1412 Low Vcesat PNP Transistor TO-252 Mechanical Drawing DIM A A1 B C D E F G G1 G2 H I J K L M TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.290 BSC 0.090 BSC 4.600 BSC 0.180 BSC 7.000 7.200 0.275 0.283 6.000 6.200 0.236 0.244 6.400 6.604 0.252 0.260 2.210 2.387 0.087 0.094 0.010 0.127 0.000 0.005 5.232 5.436 0.206 0.214 0.666 0.889 0.026 0.035 0.633 0.889 0.025 0.035 0.508 REF 0.020 REF 0.900 1.500 0.035 0.059 2.743 REF 0.108 REF 0.660 0.940 0.026 0.037 1.397 1.651 0.055 0.065 1.100 REF 0.043 REF 3/4 Version: B11 TSB1412 Low Vcesat PNP Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: B11