TSD2150A
Low Vcesat NPN Transistor
SOT-89
Pin Definition: 1. Base 2. Collector 3. Emitter
TO-92
Pin Definition: 1. Emitter 2. Collector 3. Base
PRODUCT SUMMARY
BVCBO BVCEO IC VCE(SAT) 80V 50V 3A 0.5V @ IC / IB = 2A / 200mA
Features
● ● Low VCE(SAT) 0.1 @ IC / IB = 1A / 50mA (Typ.) Complementary part with TSB1424A
Ordering Information
Part No.
TSD2150ACY RM TSD2150ACT B0 TSD2150ACT A3
Package
SOT-89 TO-92 TO-92
Packing
1Kpcs / 7” Reel 1K / Bulk 2K / Ammo
Structure
● ● Epitaxial Planar Type NPN Silicon Transistor
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation DC Pulse SOT-89 TO-92
Symbol
VCBO VCEO VEBO IC PD TJ TSTG
Limit
80 50 6 3 6 (note1) 0.6 0.75 +150 - 55 to +150
Unit
V V V A W
o o
Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw=10ms, Duty≤50% 2. When mounted on a 40 x 50 x 0.7mm ceramic board.
C C
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current
Conditions
Symbol
BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) VCE(SAT) VBE(SAT) hFE 1 hFE 2 hFE 3 fT Cob
Min
80 50 6 -----180 200 150 ---
Typ
-----0.1 0.25 ----90 45
Max
---0.1 0.1 0.25 0.5 2 -400 ----
Unit
V V V uA uA V V
IC = 50uA, IE = 0 IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCB = 60V, IE = 0 VEB = 3V, IC = 0 IC / IB = 1A / 50mA Collector-Emitter Saturation Voltage IC / IB = 2A / 200mA Base-Emitter Saturation Voltage IC / IB = 2A / 200mA VCE = 2V, IC = 100mA DC Current Transfer Ratio VCE = 2V, IC = 500mA VCE = 2V, IC = 1A VCE =5V, IE=0.1A, Transition Frequency f=100MHz Output Capacitance VCB = 10V, f=1MHz Note: Pulse test: pulse width ≤380uS, Duty cycle≤2%
MHz pF
1/5
Version: B11
TSD2150A
Low Vcesat NPN Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Collector Current
Figure 3. VBE(SAT) v.s. Collector Current
Figure 4. Power Derating Curve
2/5
Version: B11
TSD2150A
Low Vcesat NPN Transistor
SOT-89 Mechanical Drawing
DIM A B C D E F G H I J
SOT-89 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.40 4.60 0.173 0.181 1.50 1.7 0.059 0.070 2.30 2.60 0.090 0.102 0.40 0.52 0.016 0.020 1.50 1.50 0.059 0.059 3.00 3.00 0.118 0.118 0.89 1.20 0.035 0.047 4.05 4.25 0.159 0.167 1.4 1.6 0.055 0.068 0.35 0.44 0.014 0.017
3/5
Version: B11
TSD2150A
Low Vcesat NPN Transistor
TO-92 Mechanical Drawing
DIM A B C D E F G H
TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 13.53 (typ) 0.532 (typ) 0.39 0.49 0.015 0.019 1.18 1.28 0.046 0.050 3.30 3.70 0.130 0.146 1.27 1.31 0.050 0.051 0.33 0.43 0.013 0.017
4/5
Version: B11
TSD2150A
Low Vcesat NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
5/5
Version: B11
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